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Characteristics of Holographic Diffraction Grating Formation on $AS_{40}Se_{15}S_{35}Ge_{10}$ Thin Film with the Polarization State of Recording Beam  

Park, Jeong-Il (광운대 공대 3DRC)
Chung, Hong-Bay (광운대 공대 전자재료공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.55, no.9, 2006 , pp. 423-428 More about this Journal
Abstract
We have been carried out the two-beam interference method to form the diffraction grating on chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ thin films for Holography Data Storage (HDS). In the present work, we have been formed holographic diffraction gratings using He-Ne laser (632.8nm) under different Polarization state combinations (intensity polarization holography, phase polarization holography). It was obtained the diffraction grating efficiency by 11st order intensity and investigated the formed grating structure using Atomic Force Microscopy (AFM). As the results, it is shown that the diffraction efficiency of (P: P) polarized recording was maximum 2.4% and we found that its value was rather higher than that of other-polarized recordings. From the results, it is confirmed that the efficient holographic grating formation on amorphous chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ films depend on both the spatial variation of intensity and the polarization state of the incident field pattern.
Keywords
Holography Data Storage(HDS); Two-Beam Interference; Chalcogenide; Polarization Holography;
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