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2- Dimensional Embossing Type Hologram Fabrication in Amorphous As-Ge-Se-S with the Selective Etching  

Lee, Ki-Nam ((주)신영프레시젼)
Chung, Hong-Bay (광운대 전자재료공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.55, no.7, 2006 , pp. 354-358 More about this Journal
Abstract
In this paper, we investigated the selective etching rate of amorphous As-Ge-Se-S thin film due to the photoexpansion effect and fabricated the 2-dimensional embossing type diffraction grating hologram. We measured the thickness change with the etching time among NaOH solution after forming 1-dimension diffraction grating. As a results, we found that the selective etching rate were $2.5\AA/s,\;3.3\AA/s,\;3.9\AA/s$ where NaOH solution concentration were 0.26N, 0.33N, 0.36N, respectively. Also after the formation of 2-dimensional diffraction grating by the $90^{\circ}$ degree of circulation on the formed 1-dimensional diffraction grating, we etched selectively during 60sec, among 0.26N NaOH solution and obtained 2-dimensional embossing diffraction grating. As the results of AFM (Atomic Force Microscopy), we confirmed the formation of distinct embossing type 2-dimensional diffraction grating hologram, successfully.
Keywords
NaOH;
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Times Cited By KSCI : 3  (Citation Analysis)
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