• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1526-1528
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• 2007

In this report, Manganese doped magnesium germanate ($Mg_4GeO_2:Mn$) phosphor has been synthesized by the solid state method. Also, this phosphor was prepared by simple process under an air atmosphere for oxidation of Mn. The prepared phosphor shows a main luminescent peak at 661nm. Therefore, this phosphor is possible to be applicable to white LED lamp by GaN or InGaN chips.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.675-678
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• 2003

본 논문에서는 N-type 기판에서 Nickel-Silicide를 적용하였을 경우에 나타나는 문제점과 PAI (Pre-amorphization Implant)의 효과에 대하여 알아보았다. N-type 기판에 RTP (Rapid Thermal Process)를 통하여 Nickel-Silicide 를 형성하게 되는데, 여기까지는 안정한 Nickel mono-Silicide (NiSi)가 형성됨을 확인하였다. 하지만 후속 열처리 공정 후 심한 응집 현상 (Agglomeration)과 이상 산화 현상 (Abnormal Oxidation Phenomenon), Silicide Island 등 열안정성 (Thermal Stability) 측면에서 여러 가지 많은 문제점들이 나타났다. 이 후속 열처리의 열안정성 취약점들을 극복하는 방안으로 Ge 및 N₂ PAI를 적용하였다. PAI를 적용하였을 경우에는 그렇지 않은 경우에 비하여 고온 열처리 후에도 면저항이 비교적 잘 유지되었으며, 두께가 얇고 안정한 Nickel-Silicide 특성을 확보할 수 있었다. 특히 Ge PAI 에 비하여 N₂ PAI 의 경우가 보다 특성 개선 효과가 크게 나타났다.

• 한국전기전자재료학회논문지
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• 제20권5호
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• pp.399-402
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• 2007

The effects of heat treatment on the electrical properties of strained-Si/SiGe-on-insulator (SGOI) devices were examined. We proposed the optimized heat treatment processes for improving the back interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA (rapid thermal annealing) before gate oxidation step and the post-RTA after source/drain dopant activation step, the electrical properties of strained-Si channel on $Si_{1-x}Ge_x$ layer were greatly improved, which resulting the improvement of the driving current, transconductance, and leakage current of SGOI-MOSFET.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2001년도 제21회 학술발표회 초록집
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• pp.27-28
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• 2001

• Nuclear Engineering and Technology
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• 제48권1호
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• pp.16-25
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• 2016

In severe loss of coolant accidents (LOCA), similar to those experienced at Fukushima Daiichi and Three Mile Island Unit 1, the zirconiumalloy fuel claddingmaterials are rapidlyheateddue to nuclear decay heating and rapid exothermic oxidation of zirconium with steam. This heating causes the cladding to rapidly react with steam, lose strength, burst or collapse, and generate large quantities of hydrogen gas. Although maintaining core cooling remains the highest priority in accident management, an accident tolerant fuel (ATF) design may extend coping and recovery time for operators to restore emergency power, and cooling, and achieve safe shutdown. An ATF is required to possess high resistance to steam oxidation to reduce hydrogen generation and sufficient mechanical strength to maintain fuel rod integrity and core coolability. The initiative undertaken by Electric Power Research Institute (EPRI) is to demonstrate the feasibility of developing an ATF cladding with capability to maintain its integrity in $1,200-1,500^{\circ}C$ steam for at least 24 hours. This ATF cladding utilizes thin-walled Mo-alloys coated with oxidation-resistant surface layers. The basic design consists of a thin-walled Mo alloy structural tube with a metallurgically bonded, oxidation-resistant outer layer. Two options are being investigated: a commercially available iron, chromium, and aluminum alloy with excellent high temperature oxidation resistance, and a Zr alloy with demonstratedcorrosionresistance.Asthese composite claddings will incorporate either no Zr, or thin Zr outer layers, hydrogen generation under severe LOCA conditions will be greatly reduced. Key technical challenges and uncertainties specific to Moalloy fuel cladding include: economic core design, industrial scale fabricability, radiation embrittlement, and corrosion and oxidation resistance during normal operation, transients, and severe accidents. Progress in each aspect has been made and key results are discussed in this document. In addition to assisting plants in meeting Light Water Reactor (LWR) challenges, accident-tolerant Mo-based cladding technologies are expected to be applicable for use in high-temperature helium and molten salt reactor designs, as well as nonnuclear high temperature applications.

• Fisheries and Aquatic Sciences
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• 제13권3호
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• pp.231-235
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• 2010

The effects of various natural antioxidant sources on oxidation of olive flounder (Paralichthys olivaceus) and fish diet during storage was determined. Juvenile fish were distributed among 18 flow-through tanks (40 fish per tank). Six experimental diets were prepared in triplicate: control (CT), antitox (AT), green tea extract (GE), fig extract (FE), Haeroc product (HP) and by-product of green tea (BG). The experimental diets were stored at two temperatures: room temperature ($26.8^{\circ}C$) for 14 days and frozen ($-30^{\circ}C$) for 16 weeks. Thirty fish were sampled from each tank at the end of the 8-week feeding trial. Whole bodies of fish were homogenized and stored in a home freezer ($-9.6^{\circ}C$) for 24 weeks. Acid values (AVs) and peroxide values (POVs) of the diets and frozen fish during storage were monitored. AVs of the experimental diets tended to increase with the storage period except for that of the HP diet at room temperature. POVs from FE, CT, and BG diets peaked at day 7 and then decreased through the remainder of the experiment. AVs of the experimental diets and fish increased with time at $-30^{\circ}C$ and $-9.6^{\circ}C$. Results of this study show that by-products of green tea and Haeroc product seem to have potential as antioxidants in fish feed to inhibit oxidation of both the feed and fish during storage.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.399-399
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• 2013

Metal silicides는 Si 기반의microelectronic devices의 interconnect와 contact 물질 등에 사용하기 위하여 그 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 이 중 Rare-earth(RE) silicides는 저온에서 silicides를 형성하고, n-type Si과 낮은 Schottky Barrier contact (~0.3 eV)을 이룬다. 또한 낮은 resistivity와 Si과의 작은 lattice mismatch, 그리고 epitaxial growth의 가능성, 높은 thermal stability 등의 장점을 갖고 있다. RE silicides 중 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 n-channel schottky barrier MOSFETs의 source/drain으로 주목받고 있다. 또한 Silicon 기반의 CMOSFETs의 성능 향상 한계로 인하여 germanium 기반의 소자에 대한 연구가 이루어져 왔다. Ge 기반 FETs 제작을 위해서는 낮은 source/drain series/contact resistances의 contact을 형성해야 한다. 본 연구에서는 저접촉 저항 contact material로서 ytterbium germanide의 가능성에 대해 고찰하고자 하였다. HRTEM과 EDS를 이용하여 ytterbium germanide의 미세구조 분석과 면저항 및 Schottky Barrier Heights 등의 전기적 특성 분석을 진행하였다. Low doped n-type Ge (100) wafer를 1%의 hydrofluoric (HF) acid solution에 세정하여 native oxide layer를 제거하고, 고진공에서 RF sputtering 법을 이용하여 ytterbium 30 nm를 먼저 증착하고, 그 위에 ytterbium의 oxidation을 방지하기 위한 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, rapid thermal anneal (RTA)을 이용하여 N2 분위기에서 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium germanides를 형성하였다. Ytterbium germanide의 미세구조 분석은 transmission electron microscopy (JEM-2100F)을 이용하였다. 면 저항 측정을 위해 sulfuric acid와 hydrogen peroxide solution (H2SO4:H2O2=6:1)에서 strip을 진행하여 TiN과 unreacted Yb을 제거하였고, 4-point probe를 통하여 측정하였다. Yb germanides의 면저항은 열처리 온도 증가에 따라 감소하다 증가하는 경향을 보이고, $400{\sim}500^{\circ}C$에서 가장 작은 면저항을 나타내었다. HRTEM 분석 결과, deposition 과정에서 Yb과 Si의 intermixing이 일어나 amorphous layer가 존재하였고, 열처리 온도가 증가하면서 diffusion이 더 활발히 일어나 amorphous layer의 두께가 증가하였다. $350^{\circ}C$ 열처리 샘플에서 germanide/Ge interface에서 epitaxial 구조의 crystalline Yb germanide가 형성되었고, EDS 측정 및 diffraction pattern을 통하여 안정상인 YbGe2-X phase임을 확인하였다. 이러한 epitaxial growth는 면저항의 감소를 가져왔으며, 열처리 온도가 증가하면서 epitaxial layer가 증가하다가 고온에서 polycrystalline 구조의 Yb germanide가 형성되어 면저항의 증가를 가져왔다. Schottky Barrier Heights 측정 결과 또한 면저항 경향과 동일하게 열처리 증가에 따라 감소하다가 고온에서 다시 증가하였다.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.511-512
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• 2006

Tungsten coatings with different interlayers onto the oxygen-free copper substrates were fabricated by atmosphere plasma spraying. The effects of different interlayers of NiCrAl, NiAl and W/Cu on bonding strength were studied. SEM, EDS and XRD were used to investigate the photographs and compositions of these coatings. The tungsten coatings with different initial particle sizes resulted in different microstructures. Oxidation was not detected in the tungsten coating, but in the interlayer, it was found by both XRD and EDS. The tungsten coating deposited directly onto the copper substrate presented higher bonding strength than those with different interlayers.

• 대한전자공학회논문지
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• 제23권1호
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• pp.50-57
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• 1986

The fabricatoin sequence of GaAs MIS type diode and its electrical characteristics are presented. Used wafers were undoped GaAS wafer adn Te-doped GaAs wafer. Au and AuGe/Ni was used as schottky contact metal and ohmic contact metal respectively. Oxide layer on GaAs surface was formed by water vapor saturated oxide growth technique and dry oxidation technique. In Te-doped GaAs wafer, cutin voltage of MIS type diode was enhanced about 3V comparing with non-oxide layer diode. From light I-V characteristics fill factor of MIS type Te-doped GaAs diode was about 64%, Voc(open circuit voltage) was 0.67V.

• 대한환경공학회지
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• 제36권1호
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• pp.42-48
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• 2014

본 연구에서는 단일반응조에서 포기/비포기 시간에 따른 하수 내 유기물질 및 질소화합물을 변화양상을 살펴보고자 하였다. 실험 결과 C/N비 3 : 1, 포기/비포기 20/40 min 구간에서부터 90% 이상의 안정적인 유기물 및 질소 제거가 이루어짐을 알 수 있었다. 포기/비포기 구간의 비율을 길게 유지하는 것이 탈질에 더욱 효과적이었으며 이는 비포기 구간을 유지하는 동안 반응조 내 미생물의 군집변화에 기인하는 것으로 판단하였다. PCR-DGGE를 한 결과, 유기물 및 질소화합물의 산화에 관여하는 미생물로 Dysgonomonas mossii strain Melo40, Eubacterium sp. oral clone JN088, Uncultured bacterium clone SPESB2_718과 Bacterium enrichment culture clone LE이 관찰되었고 탈질에 관여하는 미생물은 Uncultured Acidobacteria bacterium clone AKYG487, Lactobacillus harbinensis strain FQ003, Erythrobacter litoralis strain Gi-3, Phytobacter diazotrophicus strain Ls8, Mycobacterium sp. enrichment culture clone GE10037biofNNA로 나타났다.