• Journal of the Korean Institute of Telematics and Electronics
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• v.14 no.3
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• pp.18-24
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• 1977

In this paper, a series inverter circuit is constructed by using the pinch-off characteristics of FET, and itsoutput characteristics is analysed for the variation of gate bias frequency and load. The above constructed circuit could eliminate the unstable output characteristics of SCR-series inverter fir chit by the changes of gate bias frequency and load resistor. But the current capacity of the FET-series inverter circuit is relatively small, and is recommended to be used for light loads.

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.7-10
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• 2011

High voltage (HV) integrated circuits are viable alternatives to discrete circuits in a wide variety of applications. A HV device generally used in these circuits is a lateral double diffused metal oxide semiconductor (LDMOS) transistor. Attempts to model LDMOS devices are complicated by the existence of the lightly doped drain and by the extension of the poly-silicon and the gate oxide. Several physically based investigations of the bias-dependent drift resistance of HV devices have been conducted, but a complete physical model has not been reported. We propose a new technique to model HV devices using both the BSIM3 SPICE model and a bias dependent resistor model (sub-circuit macro model).

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.4
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• pp.309-315
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• 2010

A fully-differential low-voltage low-power electrocardiogram (ECG) amplifier by using the nonfeedback PMOS pseudo-resistors is proposed. It consists of two operational-transconductance amplifiers (OTA) in series (a preamplifier and a variable-gain amplifier). To make it insensitive to the gate leakage current of the OTA input transistor, the feedback pseudo-resistor of the conventional ECG amplifier is moved to input branch between the OP amp summing node and the DC reference voltage. Also, an OTA circuit with a Gm boosting block without reducing the output resistance (Ro) is proposed to maximize the OTA DC gain. The measurements shows the frequency bandwidth from 7 Hz to 480 Hz, the midband gain programmable from 48.7 dB to 59.5 dB, the total harmonic distortion (THD) less than 1.21% with a full voltage swing, and the power consumption of 233 nW in a 0.13 ${\mu}m$ CMOS process at the supply voltage of 0.7 V.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.17 no.6
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• pp.83-88
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• 2003

This paper analyses a fault operation due to the effect of miller capacitance, which severely influences the performance of the IPMs based on computer-aided simulations, and also it presents a good solution to solve that problem. A miller capacitance existed between gate and collect is very closely related to the stray capacitance formed between gate and emitter, and the value of gate resistor. These relationships are proved by the computer-aided simulation. Based on the PSpice simulation results, a customized IPM employing an auxiliary circuit is presented to minimize a fault operation. And it is compared to the standard IPM by the experimental waveform. As a result, it is verified that a customized IPM has a voltage margin to prevent a fault operation approx. 3 [V].

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.6
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• pp.304-308
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• 2002

We demonstrate a simple pulsed $CO_2$ laser with millisecond long pulse duration in a tube at a low pressure of less than 30 Torr. The novel power supply for our laser system switches the voltage of the AC power line (60Hz) directly. The power supply doesn't need elements such as a rectifier bridge, energy-storage capacitors, or a current-limiting resistor in the discharge circuit. To control the laser output power, the pulse repetition rate is adjusted up to 60Hz and the firing angle of SCR(Silicon Controlled Rectifier) gate is varied from 30。 to 150。. A ZCS (Zero Crossing Switch) circuit and a PIC one-chip microprocessor are used to control precisely the gate signal of the SCR. The maximum laser output of 35 W is obtained at a total pressure of 18 Torr, a pulse repetition rate of 60 Hz, and a SCR gate firing angle of 90。 . In addition, the resulting laser pulse width is approximately 3㎳(FWHM). This is a relatively long pulse width, compared with other repetitively pulsed $CO_2$ lasers.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2138-2139
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• 2005

We demonstrate a simple CO2 laser by controlling firing angle of a TRIAC switch in ac power line. The power supply for our laser system switches the voltage of the AC power line (60Hz) directly. The power supply does not need elements such as a rectifier bridge, energy-storage capacitors, or a current-limiting resistor in the discharge circuit. In order to control the laser output power, the pulse repetition rate is adjusted up to 60Hz and the firing angle of TRIAC gate is varied from 45 to 135. A ZCS(Zero Crossing Switch) circuit and a PIC one-chip microprocessor are used to control the gate signal of the TRIAC precisely. The maximum laser output of 40W is obtained at a total pressure of 18Torr, a pulse repetition rate of 60Hz, and a TRAIC gate firing angle of 90.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1027-1032
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• 1996

The auto-illumination controller for office, residence, and so on was studied. The system consists of parts of a power supply, a signal oscillator, a lamp controller and two kinds of sensor. The lamp controller has two thyristors triggered by the IR sensor(SCRI) and CdS sensor(SCR2) respectively, When the illuminance around this system is higher than operating value of its sensor, lamp is turned off automatically. Otherwise, the light of lamp gets dim by CdS sensor. In case IR sensor senses the body heat of people around itself, the illuminance of the lamp gets maximum. The illuminance of the lamp can be changed dimmly by control of the variable resistor (RV) connected with SCR2 in series. The turning - on time of the lamp can be also controlled using a variable resistor(Rt) connected with a signal oscillator in parallel. Changing resistance Rt changes the time constant(.tau.), which triggers the gate of SCR2. Though people left the surrounding of lamp, the lamp keeps light for a while.

• Journal of electromagnetic engineering and science
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• v.17 no.2
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• pp.105-107
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• 2017

The self-biasing circuit through a feedback resistor is applied to a gallium nitride (GaN) distributed power amplifier (PA) monolithic microwave circuit (MMIC). The self-biasing circuit is a useful scheme for biasing depletion-mode compound semiconductor devices with a negative gate bias voltage, and is widely used for common source amplifiers. However, the self-biasing circuit is rarely used for PAs, because the large DC power dissipation of the feedback resistor results in the degradation of output power and power efficiency. In this study, the feasibility of applying a self-biasing circuit through a feedback resistor to a GaN PA MMIC is examined by using the high operation voltage of GaN high-electron mobility transistors. The measured results of the proposed GaN PA are the average output power of 41.1 dBm and the average power added efficiency of 12.2% over the 6-16 GHz band.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.194-200
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• 2012

In this paper, we proposed a SPICE model of high-voltage insulated gate bipolar transistor(IGBT). The proposed model consists of two sub-devices, a MOSFET and a BJT. Basic I-V characteristics and their temperature dependency were realized by adjusting various parameters of the MOSFET and the BJT. To model nonlinear parasitic capacitances such as a reverse-transfer capacitance, multiple junction diodes, ideal voltage and current amplifiers, a voltage-controlled resistor, and passive devices were added in the model. The accuracy of the proposed model was verified by comparing the simulation results with the experimental results of a 1200V trench gate IGBT.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.5
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• pp.9-14
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• 2009

In this paper, we proposed a novel OTP unit bit of CMOS gate oxide antifuse using the standard CMOS process without additional process. The proposed OTP unit bit is composed of 3 transistors including an NMOS gate oxide antifuse and a sense amplifier of inverter type. The layout area of the proposed OTP unit bit is $22{\mu}m^2$ similar to a conventional OTP unit bit. The programming time of the proposed OTP unit bit is 3.6msec that is improved than that of the conventional OTP unit bit because it doesn't use high voltage blocking elements such as high voltage blocking switch transistor and resistor. And the OTP array with the proposed OTP unit bit doesn't need sense amplifier and bias generation circuit that are used in a conventional OTP array because sense amplifier of inverter type is included to the proposed OTP unit bit.