• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.6
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• pp.459-462
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• 2019

This work presents methods for reducing overshoot voltages across the drain-source of silicon carbide (SiC) MOSFETs in grid-connected hybrid active neutral-point-clamped (ANPC) inverters. Compared with 3-level NPC-type inverter, the hybrid ANPC inverter can realize the high efficiency. However, SiC MOSFETs conduct its switching operation at high frequencies, which cause high overshoot voltages in such devices. These overshoot voltages should be reduced because they may damage switching devices and result in electromagnetic interference (EMI). Two major strategies are used to reduce the overshoot voltages, namely, adjusting the gate resistor and using a snubber capacitor. In this paper, advantages and disadvantages of these methods will be discussed. The effectiveness of these strategies is verified by experimental results.

• Journal of Advanced Marine Engineering and Technology
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• v.32 no.8
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• pp.1263-1268
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• 2008

In this paper, the low noise power amplifier for GaAs FET ATF-10136 is designed and fabricated with active bias circuit and self bias circuit. To supply most suitable voltage and current, active bias circuit is designed. Active biasing offers the advantage that variations in the pinch-off voltage($V_p$) and saturated drain current($I_{DSS}$) will not necessitate a change in either the source or drain resistor value for a given bias condition. The active bias network automatically sets a gate-source voltage($V_{gs}$) for the desired drain voltage and drain current. Using resistive decoupling circuits, a signal at low frequency is dissipated by a resistor. This design method increases the stability of the LNA, suitable for input stage matching and gate source bias. The LNA is fabricated on FR-4 substrate with active and self bias circuit, and integrated in aluminum housing. As a results, the characteristics of the active and self bias circuit LNA implemented more than 13 dB and 14 dB in gain, lower than 1 dB and 1.1 dB in noise figure, 1.7 and 1.8 input VSWR at normalized frequency $1.4{\sim}1.6$, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.6
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• pp.910-916
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• 1999

This paper presents the effective improvement of the thermal runaway phenomenon in high power SSPA when the RF input signal is not provided. The total gate resistors are optimized by the experiments and deducing the variation of velocity and currents of thermal runaway, which is based on manufacturer's recommendation. Especially, it is solved the complex thermal runaway that related gate resistors with the gate voltage variable circuit. The result of this paper is able to apply for improving the thermal runaway in existence of high power SSPA for WLL, cellular system and PCS repeater.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.4
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• pp.152-154
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• 2005

We demonstrate a simple $CO_2$ laser by controlling firing angle of a TRIAC switch in ac power line. The power supply for our laser system switches the voltage of the AC power line (60Hz) directly. The power supply does not need elements such as a rectifier bridge, energy-storage capacitors, or a current-limiting resistor in the discharge circuit. In order to control the laser output power, the pulse repetition rate is adjusted up to 60Hz and the firing angle of TRIAC gate is varied from $45^{circ}$ to $135^{circ}$. A ZCS(Zero Crossing Switch) circuit and a PIC one-chip microprocessor are used to control the gate signal of the TRIAC precisely. The maximum laser output of 40W is obtained at a total pressure of 18 Torr, a pulse repetition rate of 60Hz, and a TRAIC gate firing angle of $90^{circ}$.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.53 no.6
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• pp.359-367
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• 2004

The switched reluctance motor(SRM) has considerable potential for industrial applications because of its high result lily as a result of the absence of rotor windings. In some applications with SRM, paralleling strategy is often used for cost saving, increasing of current capacity and system reliability. A SRM inverter has very low ,switching frequency. This results in reducing the burden for a high-speed of the gate-amp interface circuit. and the linearity of optocoupler is used to protect the instantaneous peak current for the stable operation. In this paper, series resistor is used to equal the current sharing of each switching device and a linear gate-amp is proposed to protect the instantaneous peak current which occurs in transient state. The proposed paralleling strategy is verified by experimental results.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.4
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• pp.21-29
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• 1998

As silicon geometry shrinks into deep submicron and the operating speed icreases, higher accuracy is required in the analysis of the propagation delays of the gates and interconnects in an ASIC. In this paper, the driving characteristics of a CMOS gate is represented by a gatedriver model, consisting of a linear resistor $R_{dr}$ and an independent ramp voltage source $V_{dr}$ . We drivered $R_{dr}$ and $V_{dr}$ as the functions of the timing data representing gate driving capability and an effective capacitance $C_{eff}$ reflecting resistance shielding effect by interconnet circuits. Through iterative applications of these equations and AWE algorithm, $R_{dr}$ , $V_{dr}$ and $C_{eff}$ are comuted simulataneously. then, the gate delay is decided by $C_{eff}$ and the interconnect circuit delay is determined by $R_{dr}$ and $V_{dr}$ . this process has been implemented as an ASIC timing analysis program written in C language and four real circuits were analyzed. In all cases, we found less than 5% of errors for both of gate andinterconnect circuit delays with a speedup factor ranging from a few tens to a few hundreds, compared to SPICE.SPICE.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.6
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• pp.10-15
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• 2008

In this paper, a new NMOS gate cross-connected current-mirror type bridge rectifier for UHF RFID applications is presented. The DC converting characteristics of the proposed rectifier are analyzed with the high frequency equivalent circuit and the gate capacitance reduction technique for reducing the gate leakage current due to the increasing of operating frequency is also proposed theoretically by circuitry method. As the results, the proposed rectifier shows nearly same DC output voltages as the existing NMOS gate cross-connected rectifier, but it shows the gate leakage current reduced to less than 1/4 and the power consumption reduced more than 30% at the load resistor, and it shows more stable DC supply voltages for the valiance of load resistance. In addition, the proposed rectifier shows high enough and well-rectified DC voltages for the frequency range of 13.56MHz HF(for ISO 18000-3), 915MHz UHF(for ISO 18000-6), and 2.45 GHz microwave(for ISO 18000-4). Therefore, the proposed rectifier can be used as a general purpose one to drive RFID transponder chips on various RFID systems which use specified frequencies.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.208-211
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• 1999

Abstract - Electrical characteristics or asymmetric n-MOSFET's with different source and drain geometry are experimently investigated using test structures having various gate width. Saturation drain current and resistance in linear region are estimated by a simple schematic model, which consists of conventional device having parasitic resistor. A comparison of experimental results of symmetric and asymmetric devices gives the parasitic resistance caused by abnormal device structure. The suggested model shows good agreement with the measured drain current for both forward- and reverse-modes.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1395-1397
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• 2005

This paper presents a novel current driving method for the synchronous rectifier(SR) in a flyback topology. The proposed current driven synchronous rectifier features low power loss, good performance and the gate voltage of FET in the synchronous rectifier is easily controlled by resistor ratio. The proposed SR driving method is implemented in a 200W Flyback converter with 400Vdc input and achieved excellent performance at full load.

• Proceedings of the KIPE Conference
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• 2002.07a
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• pp.313-316
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• 2002

A SRM inverter has very low switching frequency. This results in reducing the burden for a high-speed of the gate-amp interface circuit. and the linearity of optocoupler is used to protect the intanteneous peak current for the stable operation In this paper, series resistor is used to equal the current sharing of each switching device and a linear gate-amp is proposed to protect the intanteneous peak current which occurs in transient state.