• Title/Summary/Keyword: Gate line

Search Result 328, Processing Time 0.025 seconds

High Current Behavior and Double Snapback Mechanism Analysis of Gate Grounded Extended Drain NMOS Device for ESD Protection Device Application of DDIC Chip (DDIC 칩의 정전기 보호 소자로 적용되는 GG_EDNMOS 소자의 고전류 특성 및 더블 스냅백 메커니즘 분석)

  • Yang, Jun-Won;Kim, Hyung-Ho;Seo, Yong-Jin
    • Journal of Satellite, Information and Communications
    • /
    • v.8 no.2
    • /
    • pp.36-43
    • /
    • 2013
  • In this study, the high current behaviors and double snapback mechanism of gate grounded_extended drain n-type MOSFET(GG_EDNMOS) device were analyzed in order to realize the robust electrostatic discharge(ESD) protection performances of high voltage operating display driver IC(DDIC) chips. Both the transmission line pulse(TLP) data and the thermal incorporated 2-dimensional simulation analysis as a function of ion implant conditions demonstrate a characteristic double snapback phenomenon after triggering of bipolar junction transistor(BJT) operation. Also, the background carrier density is proven to be a critical factor to affect the high current behavior of the GG_EDNMOS devices.

Crosstalk Analysis on Printed Circuit Board (인쇄뢰로기판의 누화해석)

  • 박경희;김제영;김수중
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.28A no.9
    • /
    • pp.700-707
    • /
    • 1991
  • Transmission line crosstalk of a printed circuit baord terminated with the linear resistive and nonlinear terminal network is analyzed. Based on a quasi-static approximation, crosstalk voltage is computed in frequency domain by applying the modal analysis. A scheme to calculate the maximum crosstalk voltage for a line terminated with the nonlinear digital gate is proposed. And also, crosstalk quantities are numerically obtained for the microstrip and strip line, and compared with the experimental data to validate relevance of this method.

  • PDF

Container Identifier Recognition System for GATE automation (GATE 자동화를 위한 컨테이너 식별자 인식 시스템)

  • 유영달;하성욱;강대성
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
    • /
    • 1998.10a
    • /
    • pp.137-141
    • /
    • 1998
  • Todays the efficient management of container has not been realized in container terminal, because of the excessive quantity of container transported and manual system. For the efficient and automated management of container in terminal, the automated container identifier recognition system in terminal is a significant problem. However, the identifier recognition rate is decreased owing to the difficulty of image preprocessing caused the refraction of container surface, the change of weather and the damaged identifier characters. Therefore, this paper proposes more accurate system for container identifier recognition as suggestion of Line-Scan Proper Region Detect for stronger preprocessing against external noisy element and Moment Back-Propagation Neural Network to recognize identifier.

  • PDF

Analysis of Row and Column Lines in TFT-LCD panels with a Distributed Electrical Model

  • Park, Hyun-Woo;Kim, Soo-Hwan;Kim, Gyoung-Bum;Hwang, Sung-Woo;Kim, Su-Ki;McCartney, Richard I.
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2005.07b
    • /
    • pp.882-886
    • /
    • 2005
  • As the TFT-LCD panels become larger and provide higher resolution, the distributed capacitive and resistive lines induce the propagation delay, reduce the TFT-on time and deteriorate the pixel chargingratio. A number of the compensation methods, like the H-LDC (Horizontal Line Delay Compensation), have been proposed to compensate the propagation delay of the large and high resolution panels [1]. These methods, however, require the comparatively accurate gate propagation delay estimates at each column driver. In this paper, by observing the actual gate and data waveform from 15-inch XGA TFT-LCD panels, we could predict the propagation delay along the row and column line.

  • PDF

A New Active Phase Shifter using Vetor Sum Method (Vector Sum 방법을 이용한 새로운 구조의 능동 위상천이기)

  • 김성재;명노훈
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.11 no.4
    • /
    • pp.575-581
    • /
    • 2000
  • In this paper, a new active phase shifter is proposed using a vector sum method, and a unique digital phase control method of the circuit is suggested. The proposed scheme was designed and implemented using a Wilkinson power combiner/divider, a branch line 3 dB quadrature hybrid coupler and variable gain amplifiers (VGAs) using gate FETs(DGFETs). Furthermore, it was also shown that the proposed scheme is more efficient and works properly with the digital phase control method.

  • PDF

Study on Pressure-dependent Dynamics of Liquid Crystal in a Twisted Nematic Liquid Crystal Cell with Thin Film Transistor (TFT를 이용한 비틀린 네마틱 액정 셀에서 외부 압력에 따른 액정 동력학에 관한 연구)

  • 고재완;김미숙;정연학;김향율;이승희
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.17 no.4
    • /
    • pp.426-431
    • /
    • 2004
  • We have studied the pressure-dependent liquid crystal's dynamics in a twisted nematic (TN) liquid crystal panel with thin film transistor by applying an external pressure to it. When the external pressure is applied to the panel in a dark state, the disclination lines were generated as a light leakage whereas they did not appear in a simple test cell that has only pixel and common electrodes. It was because the disclination lines were Provoked by the electric field between pixel electrode and data/gate bus line for active matrix driving. Consequently, the external pressure resulted in dynamic instability of the liquid crystal so that the disclination lines at the data/gate bus line intruded into the active area.

A Study for Stable End Point Detection in 90 nm WSix/poly-Si Stack-down Gate Etching Process (90 nm급 텅스텐 폴리사이드 게이트 식각공정에서 식각종말점의 안정화에 관한 연구)

  • Ko, Yong-Deuk;Chun, Hui-Gon;Lee, Jing-Hyuk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.18 no.3
    • /
    • pp.206-211
    • /
    • 2005
  • The device makers want to make higher density chips on the wafer through scale-down. The change of WSix/poly-Si gate film thickness is one of the key issues under 100 nm device structure. As a new device etching process is applied, end point detection(EPD) time delay was occurred in DPS+ poly chamber of Applied Materials. This is a barrier of device shrink because EPD time delay made physical damage on the surface of gate oxide. To investigate the EPD time delay, the experimental test combined with OES(Optical Emission Spectroscopy) and SEM(Scanning Electron Microscopy) was performed using patterned wafers. As a result, a EPD delay time is reduced by a new chamber seasoning and a new wavelength line through plasma scan. Applying a new wavelength of 252 nm makes it successful to call corrected EPD in WSix/poly-Si stack-down gate etching in the DPS+ poly chamber for the current and next generation devices.

Factors Influencing Farm-Gate Shrimp Prices in Thailand: An Empirical Study Using the Time Series Method

  • MUANGSRISUN, Donlathorn;JATUPORN, Chalermpon;SEERASARN, Nareerut;WANASET, Apinya
    • The Journal of Asian Finance, Economics and Business
    • /
    • v.8 no.5
    • /
    • pp.769-775
    • /
    • 2021
  • The objective of this research was to analyze the factors influencing the farm-gate shrimp prices in Thailand using monthly time series from January 2001 to December 2019. The econometric methodology was employed to satisfy the purpose, consisting of the cointegration test for revealing the long-run relationship and equilibrium elasticity between the variables as well as the error correction model for detecting speed adjustment to shock responses. The empirical results revealed that (1) the export shrimp prices, shrimp production in the country, and shrimp export volume indicated a long-run relationship running to the farm-gate shrimp prices in Thailand with the size of equilibrium elasticity equal to 1.083%, -0.256%, and 0.123, respectively, and (2) the farm-gate shrimp prices in Thailand would adjust to the equilibrium line with a speed equal to 20.147% if there was any kind of incident or shock which caused the relationship to deviate from the equilibrium point. There was no relationship in terms of global shrimp prices and the exchange rate for farm-gate shrimp prices in Thailand. The recommendations should emphasize the varieties of shrimp products for export to other countries beyond the main trading markets nowadays to reduce risks and fluctuations in the export prices of shrimp products.

Integrating Study of Kidney on Left & Life Gate on Right(左腎右命門) and Moving Energy between two kidneys(腎間動氣) (좌신우명문(左腎右命門)과 신간동기(腎間動氣)의 통합적 이해를 위한 연구)

  • Kim, Jin-Ho
    • Journal of Korean Medical classics
    • /
    • v.26 no.4
    • /
    • pp.253-266
    • /
    • 2013
  • Objective : There was no attempt to understand Moving Energy between two kidneys(腎間動氣) and Kidney on Left & Life Gate on Right(左腎右命門) by integration progress. So I have faced to study based on two parts with concerning as clues. One is 'Life Right (左 右)' and the other is 'Between(間)'. Methods : Revealing the source of the origin, Nanjingbenyi(難經本義) is given on the basis. Take a close look at publications related to Nanjing(難經) which is about Kidney on Left & Life Gate on Right and Moving Energy between two kidneys. Take a close look at Kidney, the Life Gate and Moving Energy between two kidneys. Look see the three-dimensional uplift movement of Gi(氣). Results : In Neijing(內經) and Nanjing, the basic point of view for Kidney is the same. That is explained in line with attributes of convergence(收斂). 'Life Gate(命門)' is a term to express the divergence feature(發散機能) of kidney. Moving Energy between two kidneys is used to mean the mainspring of human body activity. The Gi in human body loses altitude turning left(左旋而下降) and gains height turning right(右旋而上升). Conclusion : Watching on functional aspect, there are two names for kidney. One is 'Kidney(腎)' which collects the losing altitude turning left and the other is 'Life Gate' which rises turning right. Moreover, the fundamental power that effectuate the uplift movement is Moving Energy between two kidneys. This kind model is a way that can be understood syntagmatically the Kidney on Left & Life Gate on Right and the Moving Energy between two kidneys without any gainsaying the original of Nanjing.

Notching Phenomena of Silicon Gate Electrode in Plasma Etching Process (플라즈마 식각공정에서 발생하는 실리콘 게이트 전극의 Notching 현상)

  • Lee, Won Gyu
    • Applied Chemistry for Engineering
    • /
    • v.20 no.1
    • /
    • pp.99-103
    • /
    • 2009
  • HBr and $O_2$ in $Cl_2$ gas ambient for the high density plasma gate etching has been used to increase the performance of gate electrode in semiconductor devices. When an un-doped amorphous silicon layer was used for a gate electrode material, the notching profile was observed at the outer sidewall foot of the outermost line. This phenomenon can be explained by the electron shading effect: i.e., electrons are captured at the photoresist sidewall while ions pass through the photoresist sidewall and reach the oxide surface at a narrowly spaced pattern during the over etch step. The potential distribution between gate lines deflects the ions trajectory toward the gate sidewall. In this study, an appropriate mechanism was proposed to explain the occurrence of notching in the gate electrode of un-doped amorphous silicon.