• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.379-382
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• 2002

GaAs has wide band gap, Therefore that malarial can used high Temperature application. in this paper explain to current-voltage characteristics of thermal effect. we experiment on thermal test of current-voltage characteristics and gate leakage current with real device. As a result, we propose a current-volatage characteristics model. that model base on gate leakage current, and gate leakage current influence gate source voltage.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.44-46
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• 2001

Increase of gate leakage current causes decrease of gain and increase of noise. In this paper, gate leakage current of GaAs MESEFTs' has been traced with different temperatures from $27^{\circ}C\;to\;350^{\circ}C$ to obtain the zero voltage saturation current $J_s$ which is critical to the temperature dependency of total current. From the results, thermal leakage current coefficient has been proposed to compensate for the total current due to the thermionic emission, tunneling, generation and/or hole injection.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.26-32
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• 1997

The gate induced drain leakage(GIDL) current under the stress of worse case in -MOSFET's with ultrathin gate oxides has been measured and characterized. The GIDL current was shown that P-MOSFET's of the thicker gate oxide is smaller than that of the thinner gate oxide. It was the results that the this cur-rent is decreased with the increamental stress time at the same devices.It is analyzed that the formation components of GIDL current are both energy band to band tunneling at high gate-drain voltage and energy band to defect tunneling at low drain-gate voltage. The degradations of GIDL current was analyzed the mechanism of major role in the hot carriers trapping in gate oxide by on-state stress.

• ETRI Journal
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• v.44 no.3
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• pp.504-511
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• 2022

Monte Carlo simulations show that, as temperature increases, the average kinetic energy of channel electrons in a GaN transistor first decreases and then increases. According to the calculations, the relative energy change reaches 40%. This change leads to a reduced barrier height due to quantum coupling among the three-dimensional motions of channel electrons. Thus, an analysis and physical model of the gate leakage current that includes drift velocity is proposed. Numerical calculations show that the negative and positive temperature dependence of gate leakage currents decreases across the barrier as the field increases. They also demonstrate that source-drain voltage can have an effect of 1 to 2 orders of magnitude on the gate leakage current. The proposed model agrees well with the experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.50-53
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• 2001

In this study, gate leakage current mechanism has been analyzed for GaAs MESFET with different temperatures ranging from 27$^{\circ}C$ to 300$^{\circ}C$ . It is expected that the thermionic and field emission at the MS contact will dominate the current flow. Thermal cycle is applied to test the reliability of the device. From the results, it is proved that thermal stress gradually increases the gate leakage current at the same bias conditions and leads to the breakdown and failure mechanism which is critical in the field equipment. Finally the gate contact under the repeated thermal shock has been tested to check the quality of Schottky barrier and the current will be expressed in the analytical from to associate with the electrical characteristics of the device.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.28-31
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• 2013

A volcano shaped gated Si-FEA (silicon field emitter array) was simply fabricated using sputtering as a gate electrode deposition and lift-off for the removal of the oxide mask, respectively. Due to the limited step coverage of well-controlled sputtering and the high aspect ratio in Si dry etch caused by high RF power, it was possible to obtain Si FEAs with a stable volcano shaped gate structure and to realize the restriction of gate leakage current in field emission characteristics. For 100 tip arrays and 625 tip arrays, gate leakage currents were restricted to less than 1% of the anode current in spite of the volcano-shaped gate structure. It was also possible to keep the emitters stable without any failure between the Si cathode and gate electrode in field emission for a long time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.918-923
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• 1998

Poly-silicon thin film transistors were fabricated on quartz substrates by high temperature processes. Electrical characteristics were measured and compared for 3 transistor structures of Standard Inverted Gate(SIG), Lightly Doped Drain(LDD), and Dual Gate(DG). Leakage currents of DG and LDD TFT's were smaller that od SIG transistor, while ON-current of LDD transistor is much smaller than that of SIG and DG transistors. Temperature dependence of the leakage currents showed that SIG and DG TFT's had thermal generation current at small drian bias and Frenkel-Poole emission current at hight gate and drain biases, respectively. In case of LDD transistor, thermal generation was the dominant mechanism of leakage current at all bias conditions. It was found that the leakage current was closely related to the reduction of the electric field in the drain depletion region.

• ETRI Journal
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• v.35 no.6
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• pp.1164-1167
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• 2013

We correlate the failure in miniature X-ray tubes with the field emission gate leakage current of gated carbon nanotube emitters. The miniature X-ray tube, even with a small gate leakage current, exhibits an induced voltage on the gate electrode by the anode bias voltage, resulting in a very unstable operation and finally a failure. The induced gate voltage is apparently caused by charging at the insulating spacer of the miniature X-ray tube through the gate leakage current of the field emission. The gate leakage current could be a criterion for the successful fabrication of miniature X-ray tubes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.322-325
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• 2002

In this study, noise figures of 0.3 $\mu\textrm{m}$-GaAs MESFETs are predicted experimentally with different temperatures. Both the noise figure and the gate leakage current are obtained with wide range of temperatures(27$^{\circ}C$∼300$^{\circ}C$). From the results, gate leakage current increases with temperatures. It is expected that gate leakage current contributes directly to the increase of shot noise current. It is therefore highly recommended to apply an accurate noise analysis to the design of the devices and modules at high temperatures. Fini,Uy the relation between the gate currents resulting in the increase of noise and the noise figures of submicron GaAs MESFETs are traced with different temperatures

• Proceedings of the KIEE Conference
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• 2003.07e
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• pp.24-27
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• 2003

In this paper, We make experiment on two methode for GaAs MESFET with temperature variation. One method, we mesure gate leakage current at open source electrode. another we mesure gate leakage current at short source electrode. The difference of two current has been tested and provide that the existence of another source to Schottky barrier height against the image force lowering effect.