Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2002.07a
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- Pages.379-382
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- 2002
High Temperature Characteristics of submicron GaAs MESFETs
고온 동작 MESFET 의 온도특성 해석
Abstract
GaAs has wide band gap, Therefore that malarial can used high Temperature application. in this paper explain to current-voltage characteristics of thermal effect. we experiment on thermal test of current-voltage characteristics and gate leakage current with real device. As a result, we propose a current-volatage characteristics model. that model base on gate leakage current, and gate leakage current influence gate source voltage.