[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4313/TEEM.2013.14.1.28

Fabrication of Sputtered Gated Silicon Field Emitter Arrays with Low Gate Leakage Currents by Using Si Dry Etch

Cho, Eou Sik (Department of Electronics Engineering, Gachon University)
Kwon, Sang Jik (Department of Electronics Engineering, Gachon University)

Publication Information

Transactions on Electrical and Electronic Materials / v.14, no.1, 2013 , pp. 28-31 More about this Journal

Abstract

A volcano shaped gated Si-FEA (silicon field emitter array) was simply fabricated using sputtering as a gate electrode deposition and lift-off for the removal of the oxide mask, respectively. Due to the limited step coverage of well-controlled sputtering and the high aspect ratio in Si dry etch caused by high RF power, it was possible to obtain Si FEAs with a stable volcano shaped gate structure and to realize the restriction of gate leakage current in field emission characteristics. For 100 tip arrays and 625 tip arrays, gate leakage currents were restricted to less than 1% of the anode current in spite of the volcano-shaped gate structure. It was also possible to keep the emitters stable without any failure between the Si cathode and gate electrode in field emission for a long time.

Keywords

Volcano shaped gated Si-FEAs; Sputtering; Dry etch; Low gate leakage current; Field emission;

Citations & Related Records

Reference

1	T. H. P. Chang, D. P. Kern, and L. P. Muray, IEEE Trans. Electron Devices 38, 2284 (1991) [DOI: http://dx.doi. org/10.1109/16.88511]. DOI ScienceOn
2	K. Uemura, S. Kanemaru, and J. Itoh, Jpn. J. Appl. Phys. 35, 6629 (1996) [DOI: http:// dx.doi.org/10.1143/JJAP.35.6629]. DOI
3	J. Liu, J. J. Hren, C. T. Sune, G. W. Jones, and H. F. Gray, IEDM92, 374 (1992).
4	C. A. Spindt, C. E. Holland, A. Rosengreen, and I. Brodie, IEEE Trans. Electron Devices 38, 2355 (1991) [DOI: http:// dx.doi. org/10.1109/16.88525]. DOI ScienceOn
5	S. Wolf: Silicon processing for the VLSI Era Volume 1-Process Technology, (Lattice Press, Sunset Beach, 1986).
6	G. N. A. van Veen and B. Theunissen, J. Vac. Sci. Technol. B 13, 478 (1995) [DOI: http:// dx.doi.org/10.1116/1.588337]. DOI ScienceOn
7	Y. Yamada, S. Kanemaru, and J. Itoh, Jpn. J. Appl. Phys. 35, 6626 (1996) [DOI: http:// dx.doi.org/10.1143/JJAP.35.6626]. DOI
8	C. A. Spindt, I. Brodie, L. Humphrey, and E. R. Westerberg, J. Appl. Phys. 47, 5248 (1976) [DOI: http:// dx.doi.org/10.1063/1.322600]. DOI ScienceOn
9	S.-H. Yang and M. Yokoyama: Mater. Chem. Phys. 51, 6 (1997)[DOI: http:// dx.doi.org/10.1016/S0254-0584(97)80258-1]. DOI ScienceOn
10	S. S. Choi, S. H. Lim, D. W. Kim, M. Y. Jung, and H. Jeon, J. Vac. Sci. Technol. B 17, 4583 (1999) [DOI: http:// dx.doi. org/10.1116/1.590598]. DOI ScienceOn
11	J. E. Pogemiller, H. H. Busta, and B. J. Zimmerman, J. Vac. Sci. Technol. B 12, 680 (1994) [DOI: http:// dx.doi. org/10.1116/1.587369]. DOI ScienceOn
12	W. Mehr, A. Wolff, H. Frankenfeld, T. Skaloud, W. Hoppner, E. Bugiel, J. Larz, and B. Hunger, Microelec. Eng 30, 395 (1996) [DOI: http:// dx.doi.org/10.1016/0167-9317(95)00271-5]. DOI ScienceOn
13	C. G. Lee, B. G. Park, and J. D. Lee: J. Vac. Sci. Technol. B 15, 464 (1997) [DOI: http:// dx.doi.org/10.1116/1.589600]. DOI ScienceOn
14	H. Y. Ahn: Dr. Thesis, Faculty of Engineering, the Seoul National University, Seoul, 1996
15	H. S. Uh: Dr. Thesis, Faculty of Engineering, the Seoul National University, Seoul, 1998.
16	K. X. Liu and J. P. Heritage: J. Vac. Sci. Technol. B 21, 464 (2003) [DOI: http:// dx.doi.org/10.1116/1.1539060]. DOI ScienceOn