Proceedings of the KIPE Conference (전력전자학회:학술대회논문집)

The Korean Institute of Power Electronics (전력전자학회)
권호 표지

Gate Leakage Current of Power GaAs MESFET's at High Temperature

  • Won Chang-sub (Department of Electrical Engineering, Konkuk University) ;
  • Ahn Hyungkeun (Department of Electrical Engineering, Konkuk University) ;
  • Han Deuk-Young (Department of Electrical Engineering, Konkuk University)
  • Published : 2001.10.01
Download PDF
⟨ Previous Next ⟩

Abstract

Increase of gate leakage current causes decrease of gain and increase of noise. In this paper, gate leakage current of GaAs MESEFTs' has been traced with different temperatures from $27^{\circ}C\;to\;350^{\circ}C$ to obtain the zero voltage saturation current $J_s$ which is critical to the temperature dependency of total current. From the results, thermal leakage current coefficient has been proposed to compensate for the total current due to the thermionic emission, tunneling, generation and/or hole injection.

Keywords