• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.10
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• pp.720-725
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• 2013

Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have analyzed trench process, field limit ring process for fabrication of unified trench gate power MOSFET. And we have analyzed electrical characteristics of fabricated unified trench gate power MOSFET. The optimal trench process was based on SF6. After we carried out SEM measurement, we obtained superior trench gate and field limit ring process. And we compared electrical characteristics of planar and trench gate unified power MOSFET after completing device fabrication. As a result, the both of them was obtained 500 V breakdown voltage. However trench gate unified power MOSFET was shown improved Vth and on state voltage drop characteristics than planar gate unified power MOSFET.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1974-1976
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• 2005

The feasibility of a midgap metal gate is investigated for 32nm MOSFET low power applications. The midgap metal gate MOSFET is found to deliver a driving current as high as a bandedge gate one for the low power applications if a proper retrograde channel is used. An adequate design of the retrograde channel is essential to achieve the performance requirement given in ITRS roadmap. In addition, a process simulation is run using halo implants and thermal processes to evaluate the feasibility of the necessary retrograde profile in manufacturing environments. From the thermal budget point of view, the bandedge metal gate MOSFET is more vulnerable to the following thermal process than the midgap metal gate MOSFET since it requires a steeper retrograde doping profile. Based on the results, a guideline for the gate workfunction and the channel profile in the 32 nm MOSFET is proposed.

• Korean Institute of Interior Design Journal
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• v.26 no.4
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• pp.84-92
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• 2017

Just as the front gate is located at the meeting point between the house and the street, the Subject and the Other face each other the same way. This study examines the relationship between House(subject) and Stree (other) at the boundary of the Front Gate-Face. Pursuing the aspects of the changing Front Gate-Face accordingly to the attitude of the Subject facing the Other, this study tries to analyze the possibilities and significance of the hospitality Front Gate-Face with the ethical point of view of Levinas. As architectural instance, results of examining the Front Gate-Face of traditional houses in Korea, China and Japan are as follows. Front Gate-Face of China is characterized by self-centered introversion to interact with the external world (the other). Front Gate-Face of Japan is characterized by a humble submission to the group. Front Gate-Face of Korea shows however more flexible relationship orientations in terms of hospitality, compared to Japan or China. When looking through hospitality factors, accordingly to the above mentioned Korean hospitality characteristics, the possibilities seem not be exclusively bordered inside the conceptual category perimeter suggested by Levinas' concept of hospitality. It is almost impossible for the nowadays ever-strong privacy culture to not allow room for the architectural structure of an absolute hospitality toward others. However, this impossibility not being absolute, still yields a space for a significant possibility to explore.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.716-719
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• 1997

This paper describes the runner and gate design capabilities of the RAMEDS system, which is a specialized CAD system for injection mold design, dcvcloped using the application procedure interface of the Unigraphics system. In this system, runners lying on sculptuted partlng surface can be modeled by projecting the runner trajectory on the surface and sweeping a selected cross section along the projcctcd trajectory. In addtion, the system provides solid modeling capabilities for three types of gates currently.

• Proceedings of the KSME Conference
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• 2005.11a
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• pp.169.2-169.2
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• 2005

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.598-599
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• 2017

In motor application, High efficiency is important. So Design engineer select small gate resistor for lower switching. But There is side effect with small gate resistor. It makes large dv/dt and system request large EMI filter. It makes price increase. This paper introduce about gate drive IC which have solution both of lower loss and EMI issue.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.223-229
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• 2017

This paper analyzes the effect of a dual-metal-gate structure on the electrical characteristics of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors. These structures have two gate metals of different work function values (${\Phi}$), with the metal of higher ${\Phi}$ in the source-side gate, and the metal of lower ${\Phi}$ in the drain-side gate. As a result of the different ${\Phi}$ values of the gate metals in this structure, both the electric field and electron velocity in the channel become better distributed. For this reason, the transconductance, current collapse phenomenon, breakdown voltage, and radio frequency characteristics are improved. In this work, the devices were designed and analyzed using a 2D technology computer-aided design simulation tool.

• Journal of The Korean Society of Agricultural Engineers
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• v.54 no.3
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• pp.133-139
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• 2012

Dynamic characteristic of lift gate supported by plane truss is studied by a model test scaled with the ratio of 1 : 31.25 in the four major rivers project. The vibrations of gate supported by the plane truss is assessed in comparison with those of gate supported by the space truss which was tested formerly. The gate model is made of acryl panel and calibrated by lead. A model test is conducted under the different gate opening and upstream water levels conditions in the concrete test flume dimensioned 1.6 m in width, 0.8 m in height and 24 m in length. In order to verify the model, natural frequencies of the model gate are measured, and compared with the numerical results. The vibrations of gate model supported by the plane truss in opening height of 1.0 cm~2.0 cm shows greater than one supported by the space truss. It is found that the gate model supported by the plane truss is less desirable than one supported by the space truss. thus, the latter type of gate model is requested to design.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.7 no.3
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• pp.117-120
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• 2014

In general a main technology of control a sluice gate is accurate synchronous position control for the two cylinders when they are moving with the sluice gate together over 10[m]. Because the nonlinear friction and the unconstant supply flow. Cylinders' displacement will be different. In this case the sluice gate may be deformed and abraded, and even the sluice gate may unable to work. In order to design the controller for this system, we designed two kinds of Fuzzy PI controllers. Fuzzy PI position controller and Fuzzy PI synchronous controller have been designed. We show some simulation results for its availability.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.4
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• pp.114-122
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• 2013

This study introduces an optimization methodology for the determination of gate location that ensures the melt flow balance within a part cavity of injection mold. A new sequential direct-search scheme based on the recursive reduction of the designer-specified gate design area is developed, and it is integrated with a commercial flow simulation tool for optimization. To quantify the level of melt flow balance, we employ the maximum difference among the fill times for the melt fronts to reach the boundary elements of part cavity as objective function. The proposed methodology is successfully applied in the case study of melt flow balancing in molding of a bar code scanner model. The result shows that the melt flow balance at the optimized gate positions is significantly improved from that for the initial gate position.