Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Process and Fabrication of 500 V Unified Trench Gate Power MOSFET

500 V급 Unified Trench Gate Power MOSFET 공정 및 제작에 관한 연구

  • Kang, Ey-Goo (Department of Photovoltaic Engineering, Far East University)
  • Received : 2013.08.23
  • Accepted : 2013.09.23
  • Published : 2013.10.01
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Abstract

Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have analyzed trench process, field limit ring process for fabrication of unified trench gate power MOSFET. And we have analyzed electrical characteristics of fabricated unified trench gate power MOSFET. The optimal trench process was based on SF6. After we carried out SEM measurement, we obtained superior trench gate and field limit ring process. And we compared electrical characteristics of planar and trench gate unified power MOSFET after completing device fabrication. As a result, the both of them was obtained 500 V breakdown voltage. However trench gate unified power MOSFET was shown improved Vth and on state voltage drop characteristics than planar gate unified power MOSFET.

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References

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