Design and Analysis of AlGaN/GaN MIS HEMTs with a Dual-metal-gate Structure |
Jang, Young In
(School of Electronics Engineering, Kyungpook National University)
Lee, Sang Hyuk (School of Electronics Engineering, Kyungpook National University) Seo, Jae Hwa (School of Electronics Engineering, Kyungpook National University) Yoon, Young Jun (School of Electronics Engineering, Kyungpook National University) Kwon, Ra Hee (School of Electronics Engineering, Kyungpook National University) Cho, Min Su (School of Electronics Engineering, Kyungpook National University) Kim, Bo Gyeong (School of Electronics Engineering, Kyungpook National University) Yoo, Gwan Min (School of Electronics Engineering, Kyungpook National University) Lee, Jung-Hee (School of Electronics Engineering, Kyungpook National University) Kang, In Man (School of Electronics Engineering, Kyungpook National University) |
1 | S. Sakong, S.-H. Lee, T. Rim, Y.-W. Jo, J.-H. Lee, Y.-H. Jeong, "1/f Charcateristics of Surface-Treated Normally-Off /GaN MOSFET,". IEEE Electron Device Lett, vol. 36, no. 3, pp. 229-231, Mar, 2015. DOI |
2 | J.-H. Lee, C. Park, K.-S. Im, and J.-H. Lee, "AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With Very Low Reverse Recovery Charge at High Temperature," IEEE Trans. Electron Devices, vol. 60, no. 10, pp. 3032-3039, Oct. 2013. DOI |
3 | Y. I. Jang, J. H. Seo, Y. J. Yoon, H. R. Eun, R. H. Kwon, J.-H. Lee, H.-I. Kwon, and I. M. Kang, "Desgn and Analysis of Gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor," J. Semicond. Technol. Sci., vol. 15, no. 5, pp. 554-562, Oct. 2015. DOI |
4 | T. Murata, M. Hikita, Y. Hirose, Y. Uemoto, K. Inoue, T. Tanaka, and D. Ueda, "Source Resistance Reduction of AlGaN-GaN HFETs with Novel Superlattice Cap Layer," IEEE Trans. Electron Devices, vol. 52, no. 6, pp. 1042-1047, Jun. 2005. DOI |
5 | K.-Y. Park, H.-I. Cho, Eun-Jin Lee, S.-H. Hahm, and J.-H. Lee, "Device Characteristics of AlGaN/GaN MIS-HFET using Based High-k Dielectric," J. Semicond. Technol. Sci, vol. 5, no. 2, pp. 107-112, Jun. 2005. |
6 | T. Sato, J. Okayasu, M. Takikawa, and T.-k. Suzuki, "AlGaN-GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With Very High-k Oxynitride Gate Dielectric," IEEE Electron Device Lett, vol. 34, no. 3, pp. 375-377, Mar. 2013. DOI |
7 | S. Yang, Z. Tang, K.-Y. Wong, Y.-S. Lin, C. Liu, Y. Lu, S. Huang, and K. J. Chen, "High-Quality Interface in Al2O3/GaN/AlGaN/GaN MIS Structures With In Situ Pre-Gate Plasma Nitridation," IEEE Electron Device Lett., vol. 34, no. 12, pp. 1497-1499, Dec. 2013. DOI |
8 | X. Hu, A. Koudymov, G. Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur, and R. Gaska, "Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors ," Appl. Phys Lett, vol. 79, no. 17, pp. 2831-2834, Oct. 2001. |
9 | R. S. Saxena, and M. J. Kumar, "Dual-Material-Gate Technique for Enhanced Transconductance and Break Voltage of Trench Power MOSFETs," IEEE Trans. Electron Devices, vol. 56, no. 3, pp. 517-522, Mar. 2009. DOI |
10 | J.-B. Ha, H.-S. Kang, K.-J. Baek, and J.-H. Lee, "Enhancement of Device Performance in LDMOSFET by Using Dual-Work-Function-Gate Technique," IEEE Electron Device Lett., vol. 31, no. 8, pp. 848-850, Aug. 2010. DOI |
11 | W. Saito, Y. Kakiuchi, T. Nitta, Y. Saito, T. Noda, H. Fujimoto, A. Yoshioka, T. Ohno, and M. Yamaguchi, "Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs," IEEE Electron Device Lett., vol. 31, no. 7, pp. 659-661, Jun. 2010. DOI |
12 | H.n Huang, Y. C. Liang, G. S. Samudra, T.-F. Chang, and C.-F. Huang, "Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs," IEEE Trans. Electron Devices, vol. 29, no. 5, pp. 2164-2173, May. 2014. |
13 | SILVACO International, ATLAS User's Manual, Nov. 2014 |
14 | W. Long, H. Ou, J.-M. Kuo, and K. K. Chin, "Dual-Material Gate (DMG) Field Effect Transistor," IEEE Trans. Electron Devices, vol. 46, no. 5, pp. 865-870, May. 1999. DOI |
15 | K.-Y. Na, K.-J. Baek, and Y.-S. Kim, "N-Channel Dual-Workfunction-Gate MOSFET for Analog Circuit Applications," IEEE Trans. Electron Devices, vol. 59, no. 12, pp. 3273-3279, Dec. 2012. DOI |
16 | R. B. Daring, "Distributed Numerical Modeling of Dual-Gate GaAs MESFET's," IEEE Trans. Electron Devices, vol. 37, no. 9, pp. 1351-1360, Sep. 1989. |