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http://dx.doi.org/10.4313/JKEM.2013.26.10.720

The Process and Fabrication of 500 V Unified Trench Gate Power MOSFET  

Kang, Ey-Goo (Department of Photovoltaic Engineering, Far East University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.26, no.10, 2013 , pp. 720-725 More about this Journal
Abstract
Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have analyzed trench process, field limit ring process for fabrication of unified trench gate power MOSFET. And we have analyzed electrical characteristics of fabricated unified trench gate power MOSFET. The optimal trench process was based on SF6. After we carried out SEM measurement, we obtained superior trench gate and field limit ring process. And we compared electrical characteristics of planar and trench gate unified power MOSFET after completing device fabrication. As a result, the both of them was obtained 500 V breakdown voltage. However trench gate unified power MOSFET was shown improved Vth and on state voltage drop characteristics than planar gate unified power MOSFET.
Keywords
Power device; Breakdown voltage; Deep trench; Unified technology; Low on resistance;
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Times Cited By KSCI : 1  (Citation Analysis)
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