JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Design and Analysis of AlGaN/GaN MIS HEMTs with a Dual-metal-gate Structure

  • Jang, Young In (School of Electronics Engineering, Kyungpook National University) ;
  • Lee, Sang Hyuk (School of Electronics Engineering, Kyungpook National University) ;
  • Seo, Jae Hwa (School of Electronics Engineering, Kyungpook National University) ;
  • Yoon, Young Jun (School of Electronics Engineering, Kyungpook National University) ;
  • Kwon, Ra Hee (School of Electronics Engineering, Kyungpook National University) ;
  • Cho, Min Su (School of Electronics Engineering, Kyungpook National University) ;
  • Kim, Bo Gyeong (School of Electronics Engineering, Kyungpook National University) ;
  • Yoo, Gwan Min (School of Electronics Engineering, Kyungpook National University) ;
  • Lee, Jung-Hee (School of Electronics Engineering, Kyungpook National University) ;
  • Kang, In Man (School of Electronics Engineering, Kyungpook National University)
  • Received : 2016.08.24
  • Accepted : 2016.11.01
  • Published : 2017.04.30
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Abstract

This paper analyzes the effect of a dual-metal-gate structure on the electrical characteristics of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors. These structures have two gate metals of different work function values (${\Phi}$), with the metal of higher ${\Phi}$ in the source-side gate, and the metal of lower ${\Phi}$ in the drain-side gate. As a result of the different ${\Phi}$ values of the gate metals in this structure, both the electric field and electron velocity in the channel become better distributed. For this reason, the transconductance, current collapse phenomenon, breakdown voltage, and radio frequency characteristics are improved. In this work, the devices were designed and analyzed using a 2D technology computer-aided design simulation tool.

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References

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