• ETRI Journal
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• v.34 no.4
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• pp.485-491
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• 2012

In this paper, the implementations of a $0.1{\mu}m$ gallium arsenide (GaAs) pseudomorphic high electron mobility transistor process for a low noise amplifier (LNA), a subharmonically pumped (SHP) mixer, and a single-chip receiver for 70/80 GHz point-to-point communications are presented. To obtain high-gain performance and good flatness for a 15 GHz (71 GHz to 86 GHz) wideband LNA, a five-stage input/output port transmission line matching method is used. To decrease the package loss and cost, 2nd and 4th SHP mixers were designed. From the measured results, the five-stage LNA shows a gain of 23 dB and a noise figure of 4.5 dB. The 2nd and 4th SHP mixers show conversion losses of 12 dB and 17 dB and input P1dB of -1.5 dBm to 1.5 dBm. Finally, a single-chip receiver based on the 4th SHP mixer shows a gain of 6 dB, a noise figure of 6 dB, and an input P1dB of -21 dBm.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.37 no.7A
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• pp.545-551
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• 2012

In this paper, K-band multi-channel receiver was designed and fabricated for low noise amplification and down conversion to L-band. The fabricated multi-channel receiver incorporates GaAs-HEMT LNA(Low noise amplifier) which provides less than a 2 dB noise figure, IR(Image Rejection) Filter for rejection of image frequency, IR(Image rejection) mixer to reject a image frequency and improve an IMD(Intermodulation Distortion) characteristic. Test results of the fabricated multi-channel receiver show less than a 3.8 dB noise figure, conversion gain of more than 27dB, and IP1dB(Input 1dB Gain Compression Point) of -9.5 dB and over.

• Journal of electromagnetic engineering and science
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• v.9 no.4
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• pp.218-222
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• 2009

In this paper, we present a CPW-based 77 GHz 3-stage power amplifier MMIC for automotive radar systems. The power amplifier MMIC has been realized using a 130 nm $In_{0.88}$GaP/$In_{0.4}$AlAs/$In_{0.4}$GaAs metamorphic high-electron mobility transistors(mHEMTs) technology and an output stage with a cascode configuration. This produced a good output power and gain performance at 77 GHz. The fabricated power amplifier MMIC exhibited a small-signal gain of 18 dB, an output power of 17 dBm and 9 % power added efficiency(PAE) at 77 GHz with a total gate width of 800 ${\mu}m$ in the output stage. These performances could be useful to low-cost and small-sized components for 77 GHz automotive radar systems.

• Journal of the Korea Institute of Military Science and Technology
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• v.12 no.4
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• pp.452-459
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• 2009

A 6-bit MMIC digital attenuator applicable to X-band TR module has been developed by using $0.5{\mu}m$GaAs pHEMT processes. The Switched-T attenuator scheme and the switched-path attenuator scheme were adopted to obtain low insertion loss and small phase variation, respectively. Resistors and transmission lines are optimized to achieve the digital attenuator with high attenuation accuracy and small phase variation. The digital attenuator has RMS error of 0.4dB, resolution of 0.5dB and dynamic range of 31.5dB. The measurement results show that in-out VSWRs are less than 1.5, phase variation is from -7 to +2 degrees and IIP3 is 36.5dBm.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.96-103
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• 1995

This art~cle reports on the formation of T - Gate with O.1$\mu$m foot and 0.4$\mu$m head width at PMMA/P( MMA/MAA) resist structure using a 30KV electron beam lithography system. From the result of Monte Carlo simulation on PMMA/P( MMA/MAA)/GaAs, we obtain the dissipation energy ratio of forwardscattered electron and backscattered electron within 0.1$\mu$m scattering radius is 19.5 : 1 0.1$\mu$m T - gate has been formed with 30KV gaussian electron beam at a 440$\mu C/\textrm{cm}^2$ dosage. The gamma value of PMMA and P(MMA/MAA) at MIBK : IPA=l : 1 developer was 2.3. The overlay accuracy(3$\sigma$) from mix-andmatch of optical stepper and Ekeam lithography system for fabricating HEMT device is accomplished below 0.1$\mu$m.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.609-610
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• 2006

A 77GHz MMIC transceiver module consisting of a power amplifier, a low noise amplifier, a drive amplifier, a frequency doubler and a down-mixer has been developed for automotive forward-looking radar sensor. The MMIC chip set was fabricated using $0.15{\mu}m$ gate-length InGaAs/InAlAs/GaAs mHEMT process based on 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20dB from $76{\sim}77GHz$ with 15.5dBm output power. The chip size is $2mm{\times}2mm$. The low noise amplifier achieved a gain of 20dB in a band between $76{\sim}77\;GHz$ with an output power of 10dBm. The chip size is $2.2mm{\times}2mm$. The driver amplifier exhibited a gain of 23dB over a $76{\sim}77\;GHz$ band with an output power of 13dBm. The chip size is $2.1mm{\times}2mm$. The frequency doubler achieved an output power of -16dBm at 76.5GHz with a conversion gain of -16dB for an input power of 10dBm and a 38.25GHz input frequency. The chip size is $1.2mm{\times}1.2mm$. The down-mixer demonstrated a measured conversion gain of over -9dB. The chip size is $1.3mm{\times}1.9mm$. The transceiver module achieved an output power of 10dBm in a band between $76{\sim}77GHz$ with a receiver P1dB of -28dBm. The module size is $8{\times}9.5{\times}2.4mm^3$. This MMIC transceiver module is suitable for the 77GHz automotive radar systems and related applications in W-band.

• Journal of Electrical Engineering and Technology
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• v.8 no.3
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• pp.610-612
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• 2013

A novel balanced distributed amplifier (DA) was proposed using novel impedance transforming MEMS baluns. The impedance transforming MEMS balun is matched to $50{\Omega}$ at one input port and $25{\Omega}$ at two output ports. It is based on the electric field mode-change method, thus it is strongly independent of frequency and very compact. The novel balanced DA consists of two $25{\Omega}$-matched DAs and these are combined by $50{\Omega}$-to-$25{\Omega}$ baluns. Theoretically, it has two times wider bandwidth and power capability than the conventional DA. So as to verify the proposed concept, we designed and fabricated a conventional DA and the proposed one using 0.15-${\mu}m$ GaAs pHEMT technology.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.1-6
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• 2007

In this study, we have performed the channel modification of the conventional MHEMT (metamorphic high electron mobility transistor) to improve the breakdown characteristics. The Modified channel consists of the InxGal-xAs channel and the InP sub channel instead of the InxGa1-xAs channel. Since InP has the lower impact ionization coefficient in comparison with In0.53Ga0.47As, we have adopted the InP-composite channel in the modified MHEMT. We have investigated the breakdown mechanism and the RF characteristics for the conventional and the InP- composite channel MHEMTs. From the measurement results, we have obtained the enhanced on and off-state breakdown voltages of 2.4 and 5.7 V, respectively. Also, the increased RF characteristics have brought about the decreased output conductance for the InP-composite channel MHEMT. The cut-off frequency (fT) and the maximum oscillation frequency (fmax) for the InP-composite Channel MHEMT were 160 GHz and 230 GHz, respectively. It has been shown that the InP-composite channel MHEMT has the potential applications for the millimeter wave power device.

• ETRI Journal
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• v.35 no.3
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• pp.546-549
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• 2013

A Ka-band 6-W high power microwave monolithic integrated circuit amplifier for use in a very small aperture terminal system requiring high linearity is designed and fabricated using commercial 0.15-${\mu}m$ GaAs pHEMT technology. This three-stage amplifier, with a chip size of 22.1 $mm^2$ can achieve a saturated output power of 6 W with a 21% power-added efficiency and 15-dB small signal gain over a frequency range of 28.5 GHz to 30.5 GHz. To obtain high linearity, the amplifier employs a class-A bias and demonstrates an output third-order intercept point of greater than 43.5 dBm over the above-mentioned frequency range.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.139-142
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• 2008

An X-band MMIC power amplifier for radar application is developed using $0.25-{\mu}m$ gate length GaAs pHEMT technology. A bus-bar power combiner at output stage is used to minimize the combiner size and to simplify bias network. The fabricated power amplifier shows 38.75 dBm (7.5 Watt) Psat at 10 GHz. The chip size is $3.5\;mm{\times}3.9\;mm$.