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http://dx.doi.org/10.5573/JSTS.2008.8.2.139

X Band 7.5 W MMIC Power Amplifier for Radar Application  

Lee, Kyung-Ai (School of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology)
Chun, Jong-Hoon (Samsung Thales Company)
Hong, Song-Cheol (School of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.8, no.2, 2008 , pp. 139-142 More about this Journal
Abstract
An X-band MMIC power amplifier for radar application is developed using $0.25-{\mu}m$ gate length GaAs pHEMT technology. A bus-bar power combiner at output stage is used to minimize the combiner size and to simplify bias network. The fabricated power amplifier shows 38.75 dBm (7.5 Watt) Psat at 10 GHz. The chip size is $3.5\;mm{\times}3.9\;mm$.
Keywords
X band; high power amplifier; radar application; MMIC;
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  • Reference
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