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http://dx.doi.org/10.4218/etrij.12.0111.0644

E-Band Wideband MMIC Receiver Using 0.1 ${\mu}m$ GaAs pHEMT Process  

Kim, Bong-Su (Broadcasting & Telecommunications Convergence Research Laboratory, ETRI)
Byun, Woo-Jin (Broadcasting & Telecommunications Convergence Research Laboratory, ETRI)
Kang, Min-Soo (Broadcasting & Telecommunications Convergence Research Laboratory, ETRI)
Kim, Kwang Seon (Broadcasting & Telecommunications Convergence Research Laboratory, ETRI)
Publication Information
ETRI Journal / v.34, no.4, 2012 , pp. 485-491 More about this Journal
Abstract
In this paper, the implementations of a $0.1{\mu}m$ gallium arsenide (GaAs) pseudomorphic high electron mobility transistor process for a low noise amplifier (LNA), a subharmonically pumped (SHP) mixer, and a single-chip receiver for 70/80 GHz point-to-point communications are presented. To obtain high-gain performance and good flatness for a 15 GHz (71 GHz to 86 GHz) wideband LNA, a five-stage input/output port transmission line matching method is used. To decrease the package loss and cost, 2nd and 4th SHP mixers were designed. From the measured results, the five-stage LNA shows a gain of 23 dB and a noise figure of 4.5 dB. The 2nd and 4th SHP mixers show conversion losses of 12 dB and 17 dB and input P1dB of -1.5 dBm to 1.5 dBm. Finally, a single-chip receiver based on the 4th SHP mixer shows a gain of 6 dB, a noise figure of 6 dB, and an input P1dB of -21 dBm.
Keywords
E-band; MMIC; LNA; SHP mixer; receiver;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
Times Cited By Web Of Science : 0  (Related Records In Web of Science)
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