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X Band 7.5 W MMIC Power Amplifier for Radar Application

  • Lee, Kyung-Ai (School of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology) ;
  • Chun, Jong-Hoon (Samsung Thales Company) ;
  • Hong, Song-Cheol (School of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology)
  • Published : 2008.06.30

Abstract

An X-band MMIC power amplifier for radar application is developed using $0.25-{\mu}m$ gate length GaAs pHEMT technology. A bus-bar power combiner at output stage is used to minimize the combiner size and to simplify bias network. The fabricated power amplifier shows 38.75 dBm (7.5 Watt) Psat at 10 GHz. The chip size is $3.5\;mm{\times}3.9\;mm$.

Keywords

References

  1. A.P.de Hek, G.van der Bent, M. van Wanum, and F.E van Vliet., "A cost-effective 10Watt X band High Power amplifier and 1 Watt Driver Amplifier Chip-Set," 13th GaAs Symposium, Paris, 2005
  2. Wolfgang Bosch , James G.E. Mayock, Matthew F. O'Keefe, and Jason McMonagle, "Low Cost XBand Power Amplifier MMIC Fabricated on a 0.25$\mu$m GaAs pHEMT Process," 2005 IEEE International Radar Conference, 2005
  3. Andries Pieter de Hek, "Integrated X-band High- Power Amplifiers," pp.176
  4. Marsh, S.P., "MMIC Power Splitting and Combining Techniques," IEE Tutorial Colloquium on 6/1-6/7 , 26 Nov. 1997
  5. S.P. Marsh, D.K.Y. Lau, R. Sloan, and L.E Davis, "Design and Analysis of an X-band MMIC Bus- Bar Power Combiner," IEEE Symp. High Perf. Electron Dev. Microwave Optoelectron Applic., pp.164-169, 1999

Cited by

  1. Class-E CMOS PAs for GSM Applications vol.9, pp.1, 2009, https://doi.org/10.5515/JKIEES.2009.9.1.032
  2. X-band high-power amplifier with a magnetically coupled power-combiner vol.52, pp.1, 2010, https://doi.org/10.1002/mop.24851