• Title/Summary/Keyword: Focused Beam

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$CO_2$ Laser Irradiation Strengthening by Defocused Beam (비집속빔을 이용한 $CO_2$ 레이저 빔 조사강화)

  • Seo, Jung;Lee, Je-Hoon;Kang, Hee-Sin;Kim, Jung-Oh;Lee, Moon-Yong;Oh, Sang-Jin;Lee, Kyu-Hyun
    • Laser Solutions
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    • v.6 no.2
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    • pp.1-7
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    • 2003
  • Defocused CO$_2$ laser beam irradiation strengthening of 60kgf/$\textrm{mm}^2$ grade steel sheet was investigated to obtain the tensile strength similar to that of fully penetrated one by the focused beam. The melted line width by the defocused beam was 3∼4 times larger compared to that of the focused beam. However, the increase of tensile strength with 1 line irradiation by the defocused beam was similar to that of 2~3 lines by the focused beam. The increase(37.6%) of bending strength with 1 line by the defocused beam was higher than the increase(12.9%) of tensile strength. Also, the effect of cooling gas to strengthening was observed.

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Study of ion beam shaping of an anode-type ion source coupled with a Whenelt mask

  • Huh, Yunsung;Hwang, Yunseok;Kim, Jeha
    • Applied Science and Convergence Technology
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    • v.27 no.4
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    • pp.70-74
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    • 2018
  • We fabricated an anode-type ion source driven by a charge repulsion mechanism and investigated its beam shape controlled by a Whenelt mask integrated at the front face of the source. The ion beam shape was observed to vary by changing the geometry of the Whenelt mask. As the angle of inclination of the Whenelt mask was varied from $40^{\circ}$ to $60^{\circ}$, the etched area at a thin film was reduced from 20 mm to 7.5 mm at the working distance of 286 mm, and the light transmittance through the etched surface was increased from 78% to 80%, respectively. In addition, for the step height difference, ${\Delta}$ between the inner mask and the outer mask of ${\Delta}=0$, -1 mm, and +1 mm, we observed the ion beam shape was formed to be collimated, diverged, and focused, respectively. The focal length of the focused beam was 269 mm. We approved experimentally a simple way of controlling the electric field of the ion beam by changing the geometry of the Whenelt mask such that the initial direction of the ion beam in the plasma region was manipulated effectively.

A Feasibility Study on the Cold Hollow Cathode Gas Ion Source for Multi-Aperture Focused Ion Beam System (다개구 이온빔 가공장치용 냉음극 방식의 가스 이온원의 가능성 평가에 관한 연구)

  • Choi, Sung-Chang;Kang, In-Cheol;Han, Jae-Kil;Kim, Tae-Gon;Min, Byung-Kwon
    • Journal of the Korean Society for Precision Engineering
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    • v.28 no.3
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    • pp.383-388
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    • 2011
  • The cold hollow cathode gas ion source is under development for multi aperture focused ion beam (FIB) system. In this paper, we describe the cold hollow cathode ion source design and the general ion source performance using Ar gas. The glow discharge characteristics and the ion beam current density at various operation conditions are investigated. This ion source can generate maximum ion beam current density of approximately 120 mA/$cm^2$ at ion beam potential of 10 kV. In order to effectively transport the energetic ions generated from the ion source to the multi-aperture focused ion beam(FIB) system, the einzel lens system for ion beam focusing is designed and evaluated. The ions ejected from the ion source can be forced to move near parallel to the beam axis by adjusting the potentials of the einzel lenses.

Improvement of the Carbon Nanotube Tip by Focused Ion Beam and it Performance Evaluation (탄소나노튜브 팁의 집속이온빔에 의한 개선 및 성능 평가)

  • Han, Chang-Soo;Shin, Young-Hyun;Yoon, Yu-Hwan;Lee, Eung-Sug
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.31 no.1 s.256
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    • pp.139-144
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    • 2007
  • This paper presents development of carbon nanotube (CNT) tip modified by focused ion beam (FIB) and experimental results in non-contact mode of atomic force microscopy (AFM) using fabricated tip. We used an electric field which causes dielectrophoresis, to align and deposit CNTs on a conventional silicon tip. The morphology of the fabricated CNT tip was then modified into a desired shape using focused ion beam. We measured anodic aluminum oxide sample and trench structure to estimate the performance of FIB-modified tip and compared with those of conventional Si tip. We demonstrate that FIB modified tip in non contact mode had superior characteristics than conventional tip in the respects of wear, image resolution and sidewall measurement.

Development and characteristic study of high brightness ion source using inductively coupled plasma for focused ion beam (유도결합 플라즈마를 이용한 집속이온빔용 고휘도 이온원의 개발 및 특성연구)

  • Kim, Yoon-Jae;Park, Dong-Hee;Hwang, Yong-Seok
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2004.04a
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    • pp.494-499
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    • 2004
  • A ion source using inductively coupled plasma has been tested in order to test its feasibility as a high brightness ion source for focused ion beam. When operating the ion source with filter magentas in front of plasma electrode for a negative ion source, lower remittances are expected. Extracted beam remittances are measured with an Allison-type scanning device for various plasma parameters and extraction conditions. The normalized omittance has been measured to be around 0.2$\pi$mmmrad with beam currents of up to 0.55 ㎃. In particular, noting that multicusp magnets have a role in decreasing the remittance as well as increasing plasma discharge efficiency, transverse magnetic field has been confirmed to be a useful tool fur decreasing remittance via electron energy control.

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The Parametric Influence on Focused Ion Beam Processing of Silicon (집속이온빔의 공정조건이 실리콘 가공에 미치는 영향)

  • Kim, Joon-Hyun;Song, Chun-Sam;Kim, Jong-Hyeong;Jang, Dong-Young;Kim, Joo-Hyun
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.16 no.2
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    • pp.70-77
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    • 2007
  • The application of focused ion beam(FIB) technology has been broadened in the fabrication of nanoscale regime. The extended application of FIB is dependent on complicated reciprocal relation of operating parameters. It is necessary for successful and efficient modifications on the surface of silicon substrate. The primary effect by Gaussian beam intensity is significantly shown from various aperture size, accelerating voltage, and beam current. Also, the secondary effect of other process factors - dwell time, pixel interval, scan mode, and pattern size has affected to etching results. For the process analysis, influence of the secondary factors on FIB micromilling process is examined with respect to sputtering depth during the milling process in silicon material. The results are analyzed by the ratio of signal to noise obtained using design of experiment in each parameter.

Alignment Method of Ion Beam Axis in Focused Ion Beam System (집속이온빔장치에서의 이온빔축 얼라인먼트)

  • Park, Cheol-Woo;Lee, Jong-Hang;Kang, Seung-Oun
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.30 no.9 s.252
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    • pp.1166-1172
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    • 2006
  • This paper describes an alignment method of the ion column which is used for a focused-ion-beam machining system. The alignment parameters for mechanical and electrical components are introduced, and also sample images are used for evaluating the experiments. The experimental results show that geometrical positions of mechanical components have an influence on the quality of emitted ion beam. In addition, we can successfully align the traveling axis of ions by using mechanical and electrical methods.