• 제목/요약/키워드: Flip-Chip

검색결과 412건 처리시간 0.03초

플립 칩 전자 패키지의 피로 균열이 미치는 열적 기계적 거동 분석 (Effect analysis of thermal-mechanical behavior on fatigue crack of flip-chip electronic package)

  • 박진형;이순복
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2007년도 춘계학술대회A
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    • pp.1673-1678
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    • 2007
  • The use of flip-chip type electronic package offers numerous advantages such as reduced thickness, improved environmental compatibility, and downed cost. Despite numerous benefits, flip-chip type packages bare several reliability problems. The most critical issue among them is their electrical performance deterioration upon consecutive thermal cycles attributed to gradual delamination growth through chip and adhesive film interface induced by CTE mismatch driven shear and peel stresses. The electronic package in use is heated continuously by itself. When the crack at a weak site of the electronic package occurs, thermal deformationon the chip side is changed. Therefore, we can measure these micro deformations by using Moire interferometry and find out the crack length.

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FLIP CHIP ON ORGANIC BOARD TECHNOLOGY USING MODIFIED ANISOTROPIC CONDUCTIVE FILMS AND ELECTROLESS NICKEL/GOLD BUMP

  • Yim, Myung-Jin;Jeon, Young-Doo;Paik, Kyung-Wook
    • 마이크로전자및패키징학회지
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    • 제6권2호
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    • pp.13-21
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    • 1999
  • Flip chip assembly directly on organic boards offers miniaturization of package size as well as reduction in interconnection distances resulting in a high performance and cost-competitive Packaging method. This paper describes the investigation of alternative low cost flip-chip mounting processes using electroless Ni/Au bump and anisotropic conductive adhesives/films as an interconnection material on organic boards such as FR-4. As bumps for flip chip, electroless Ni/Au plating was performed and characterized in mechanical and metallurgical point of view. Effect of annealing on Ni bump characteristics informed that the formation of crystalline nickel with $Ni_3$P precipitation above $300^{\circ}C$ causes an increase of hardness and an increase of the intrinsic stress resulting in a reliability limitation. As an interconnection material, modified ACFs composed of nickel conductive fillers for electrical conductor and non-conductive inorganic fillers for modification of film properties such as coefficient of thermal expansion(CTE) and tensile strength were formulated for improved electrical and mechanical properties of ACF interconnection. The thermal fatigue life of ACA/F flip chip on organic board limited by the thermal expansion mismatch between the chip and the board could be increased by a modified ACA/F. Three ACF materials with different CTE values were prepared and bonded between Si chip and FR-4 board for the thermal strain measurement using moire interferometry. The thermal strain of ACF interconnection layer induced by temperature excursion of $80^{\circ}C$ was decreased with decreasing CTEs of ACF materials.

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Joule열이 Sn-3.5Ag 플립칩 솔더범프의 Electromigration 거동에 미치는 영향 (Effect of Joule Heating on Electromigration Characteristics of Sn-3.5Ag Flip Chip Solder Bump)

  • 이장희;양승택;서민석;정관호;변광유;박영배
    • 한국재료학회지
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    • 제17권2호
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    • pp.91-95
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    • 2007
  • Electromigration characteristics of Sn-3.5Ag flip chip solder bump were analyzed using flip chip packages which consisted of Si chip substrate and electroplated Cu under bump metallurgy. Electromigration test temperatures and current densities peformed were $140{\sim}175^{\circ}C\;and\;6{\sim}9{\times}10^4A/cm^2$ respectively. Mean time to failure of solder bump decreased as the temperature and current density increased. The activation energy and current density exponent were found to be 1.63 eV and 4.6, respectively. The activation energy and current density exponent have very high value because of high Joule heating. Evolution of Cu-Sn intermetallic compound was also investigated with respect to current density conditions.

Cu-Sn 머쉬룸 범프를 이용한 플립칩 접속부의 접속저항과 열 싸이클링 신뢰성 (Contact Resistance and Thermal Cycling Reliability of the Flip-Chip Joints Processed with Cu-Sn Mushroom Bumps)

  • 임수겸;최진원;김영호;오태성
    • 대한금속재료학회지
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    • 제46권9호
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    • pp.585-592
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    • 2008
  • Flip-chip bonding using Cu-Sn mushroom bumps composed of Cu pillar and Sn cap was accomplished, and the contact resistance and the thermal cycling reliability of the Cu-Sn mushroom bump joints were compared with those of the Sn planar bump joints. With flip-chip process at a same bonding stress, both the Cu-Sn mushroom bump joints and the Sn planar bump joints exhibited an almost identical average contact resistance. With increasing a bonding stress from 32 MPa to 44MPa, the average contact resistances of the Cu-Sn mushroom bump joints and the Sn planar bump joints became reduced from $30m{\Omega}/bump$ to $25m{\Omega}/bump$ due to heavier plastic deformation of the bumps. The Cu-Sn mushroom bump joints exhibited a superior thermal cycling reliability to that of the Sn planar bump joints at a bonding stress of 32 MPa. While the contact resistance characteristics of the Cu-Sn mushroom bump joints were not deteriorated even after 1000 thermal cycles ranging between $-40^{\circ}C$ and $80^{\circ}C$, the contact resistance of the Sn planar bump joints substantially increased with thermal cycling.

언더필 기술 (Underfill Technology)

    • 한국표면공학회지
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    • 제36권2호
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    • pp.214-225
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    • 2003
  • Trends in microelectronics packages such as low cost, miniaturization, high performance, and high reliability made area array interconnecting technologies including flip chip, CSP (Chip Scale Package) and BGA (Ball Grid Array) mainstream technologies. Underfill technology is used for the reliability of the area array technologies, thus electronics packaging industry regards it as very important technology In this paper, the underfill technology is reviewed and the recent advances in the underfill technology including new processes and materials are introduced. These includes reworkable underfills, no-flow underfills, molded underfills and wafer - level - applied underfills.

플립칩용 에폭시 접착제의 저온 속경화 거동에 미치는 경화제의 영향 (Effects of Hardeners on the Low-Temperature Snap Cure Behaviors of Epoxy Adhesives for Flip Chip Bonding)

  • 최원정;유세훈;이효수;김목순;김준기
    • 한국재료학회지
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    • 제22권9호
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    • pp.454-458
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    • 2012
  • Various adhesive materials are used in flip chip packaging for electrical interconnection and structural reinforcement. In cases of COF(chip on film) packages, low temperature bonding adhesive is currently needed for the utilization of low thermal resistance substrate films, such as PEN(polyethylene naphthalate) and PET(polyethylene terephthalate). In this study, the effects of anhydride and dihydrazide hardeners on the low-temperature snap cure behavior of epoxy based non-conductive pastes(NCPs) were investigated to reduce flip chip bonding temperature. Dynamic DSC(differential scanning calorimetry) and isothermal DEA(dielectric analysis) results showed that the curing rate of MHHPA(hexahydro-4-methylphthalic anhydride) at $160^{\circ}C$ was faster than that of ADH(adipic dihydrazide) when considering the onset and peak curing temperatures. In a die shear test performed after flip chip bonding, however, ADH-containing formulations indicated faster trends in reaching saturated bond strength values due to the post curing effect. More enhanced HAST(highly accelerated stress test) reliability could be achieved in an assembly having a higher initial bond strength and, thus, MHHPA is considered to be a more effective hardener than ADH for low temperature snap cure NCPs.

비전도성 접착제가 사용된 플립칩 패키지의 신뢰성에 관한 연구 (Characteristics of Reliability for Flip Chip Package with Non-conductive paste)

  • 노보인;이종범;원성호;정승부
    • 마이크로전자및패키징학회지
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    • 제14권4호
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    • pp.9-14
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    • 2007
  • 본 연구에서는 가속화 조건에서의 비전도성 접착제가 사용된 플립칩 패키지의 열적 신뢰성에 관하여 평가하였다. 실리콘 칩에 $17{\mu}m$두께의 Au 범프를 형성하고 무전해 Ni/Au 도금과 Cu 패드의 두께가 각각 $5{\mu}m$$25{\mu}m$로 형성된 연성 기판을 사용하여 플립칩 패키지를 형성하였다. 유리전이온도가 $72^{\circ}C$인 비전도성 접착제를 사용하여 플립칩을 접합시킨 후 열충격 시험과 항온항습 시험을 실시하였다. 열충격 싸이클과 항온항습 유지 시간이 증가할수록 플립칩 패키지의 전기 저항이 증가하는 것을 확인할 수 있었다. 이는 Au 범프와 Au 범프 사이의 균열, 칩과 비전도성 접착제 또는 기판과 비전도성 접착제 사이의 층간 분리에 의한 것으로 사료된다. 또한 항온항습 하에서의 전기 저항의 변화가 열충격하에서 보다 큰 것을 확인할 수 있었다. 따라서 비전도성 접착제가 사용된 플립칩 패키지는 온도보다 습기에 더욱 민감하다는 것을 알 수 있었다.

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Sn-3.5Ag 솔더를 이용한 페리퍼럴 어레이 플립칩의 열 성능 분석

  • 이택영
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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    • pp.270-277
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    • 2003
  • Thermal performance of flip chip bonding with Sn-3.5Ag solder ball was studied. The temperature distribution was measured with IR(InfraRed) camera of 25 urn resolution. The measurement shows that most of the samples had much higher maximum temperature than average temperature. With central heater and 2.5 (W), the difference between maximum and average temperature is over $80^{\circ}C$. The distribution was influenced by the location of heater, the distance from heater to flip chip bonding, and the passivation opening of solder bumps. To reduce the maximum temperature, the bigger passivation opening, the smaller chip size, and the closer location of heater to flip chip bumps are preferrable.

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