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http://dx.doi.org/10.3740/MRSK.2007.17.2.091

Effect of Joule Heating on Electromigration Characteristics of Sn-3.5Ag Flip Chip Solder Bump  

Lee, Jang-Hee (School of Materials Science and Engineering, Andong National University)
Yang, Seung-Taek (Package R&D Division, Hynix Semiconductor Inc.)
Suh, Min-Suk (Package R&D Division, Hynix Semiconductor Inc.)
Chung, Qwan-Ho (Package R&D Division, Hynix Semiconductor Inc.)
Byun, Kwang-Yoo (Package R&D Division, Hynix Semiconductor Inc.)
Park, Young-Bae (School of Materials Science and Engineering, Andong National University)
Publication Information
Korean Journal of Materials Research / v.17, no.2, 2007 , pp. 91-95 More about this Journal
Abstract
Electromigration characteristics of Sn-3.5Ag flip chip solder bump were analyzed using flip chip packages which consisted of Si chip substrate and electroplated Cu under bump metallurgy. Electromigration test temperatures and current densities peformed were $140{\sim}175^{\circ}C\;and\;6{\sim}9{\times}10^4A/cm^2$ respectively. Mean time to failure of solder bump decreased as the temperature and current density increased. The activation energy and current density exponent were found to be 1.63 eV and 4.6, respectively. The activation energy and current density exponent have very high value because of high Joule heating. Evolution of Cu-Sn intermetallic compound was also investigated with respect to current density conditions.
Keywords
Electromigration; Joule heating; flip chip bonding; Pb-free; Sn-3.5Ag;
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