• Journal of Welding and Joining
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• 제20권4호
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• pp.498-504
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• 2002

Fluxless flip chip bonding process using plasma treatment instead of flux was investigated. The effect of plasma process parameters on tin-oxide etching characteristics were estimated with Auger depth profile analysis. The die shear test was performed to evaluate the adhesion strength of the flip chip bonded after plasma treatment. The thickness of oxide layer on tin surface was reduced after Ar+H2 plasma treatment. The addition of H2 improved the oxide etching characteristics by plasma. The die shear strength of the plasma-treated Sn-Pb solder flip chip was higher than that of non-treated one but lower than that of fluxed one. The difference of the strength between plasma-treated specimen and non-treated one increased with increase in bonding temperature. The plasma-treated flip chip fractured at solder/TSM interface at low bonding temperature while the fracture occurred at solder/UBM interface at higher bonding temperature.

• 한국재료학회지
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• 제20권12호
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• pp.681-685
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• 2010

The application of flip chip technology has been growing with the trend of miniaturization of electronic packages, especially in mobile electronics. Currently, several types of adhesive are used for flip chip bonding and these adhesives require some special properties; they must be solvent-free and fast curing and must ensure joint reliability against thermal fatigue and humidity. In this study, imidazole and its derivatives were added as curing catalysts to epoxy resin and their effects on the adhesive properties were investigated. Non-isothermal DSC analyses showed that the curing temperatures and the heat of reaction were dependent primarily on the type of catalyst. Isothermal dielectric analyses showed that the curing time was dependent on the amount of catalysts added as well as their type. The die shear strength increased with the increase of catalyst content while the Tg decreased. From this study, imidazole catalysts with low molecular weight are expected to be beneficial for snap curing and high adhesion strength for flip chip bonding applications.

• Journal of Welding and Joining
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• 제33권5호
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• pp.41-46
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• 2015

The snap cure NCP(non-conducive paste) adhesive material is essentially required for the high productivity flip chip bonding process. In this study, the accessibility of DEA(dielectric analysis) method for the evaluation of snap cure behavior was investigated with comparison to the isothermal DSC(differential scanning calorimetry) method. NCP adhesive was mainly formulated with epoxy resin and imidazole curing agent. Even though there were some noise in the dielectric loss factor curve measured by DEA, the cure start and completion points could be specified clearly through the data processing of cumulation and deviation method. Degree of cure by DEA method which was measured from the variation of the dielectric loss factor of adhesive material was corresponded to about 80% of the degree of cure by DSC method which was measured from the heat of curing reaction. Because the adhesive joint cured to the degree of 80% in the view point of chemical reaction reveals the sufficient mechanical strength, DEA method is expected to be used effectively in the estimation of the high speed curing behavior of snap cure type NCP adhesive material for flip chip bonding.

• 한국재료학회지
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• 제22권9호
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• pp.454-458
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• 2012

Various adhesive materials are used in flip chip packaging for electrical interconnection and structural reinforcement. In cases of COF(chip on film) packages, low temperature bonding adhesive is currently needed for the utilization of low thermal resistance substrate films, such as PEN(polyethylene naphthalate) and PET(polyethylene terephthalate). In this study, the effects of anhydride and dihydrazide hardeners on the low-temperature snap cure behavior of epoxy based non-conductive pastes(NCPs) were investigated to reduce flip chip bonding temperature. Dynamic DSC(differential scanning calorimetry) and isothermal DEA(dielectric analysis) results showed that the curing rate of MHHPA(hexahydro-4-methylphthalic anhydride) at $160^{\circ}C$ was faster than that of ADH(adipic dihydrazide) when considering the onset and peak curing temperatures. In a die shear test performed after flip chip bonding, however, ADH-containing formulations indicated faster trends in reaching saturated bond strength values due to the post curing effect. More enhanced HAST(highly accelerated stress test) reliability could be achieved in an assembly having a higher initial bond strength and, thus, MHHPA is considered to be a more effective hardener than ADH for low temperature snap cure NCPs.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 춘계학술발표대회 개요집
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• pp.272-275
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• 2002

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 춘계학술발표대회 개요집
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• pp.276-277
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• 2002

• 마이크로전자및패키징학회지
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• 제16권3호
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• pp.25-29
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• 2009

COB(chip-on-board) 플립칩 패키지에 있어서 NCP(non-conductive paste)의 적용성을 확보하기 위해 자체 포뮬레이션한 NCP와 상용 NCP에 대하여 보드레벨 플립칩 패키지를 제작하고 고온고습 및 열충격 신뢰성을 평가하였다. 실험결과 보다 작은 입도의 용융 실리카를 첨가한 NCP 시제품들이 고온고습 신뢰성에 유리한 것을 알 수 있었다. 또한, NCP 접속부에 있어서 열응력에 의한 피로보다 흡습에 의한 에폭시의 팽창이 접속부 파손에 보다큰 영향을 미치는 것으로 나타났으며, NCP의 접착강도가 높을수록 NCP 플립칩 패키지의 열충격 신뢰성이 향상되는 것을 알 수 있었다.

• Journal of Welding and Joining
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• 제26권3호
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• pp.30-36
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• 2008

A flip-chip bonding system using IR laser with a wavelength of 1064 nm was developed and associated process parameters were analyzed using Taguchi methods. An infrared laser beam is designed to transmit through a silicon chip and used for transferring laser energy directly to micro-bumps. This process has several advantages: minimized heat affect zone, fast bonding and good reliability in the microchip bonding interface. Approximately 50 % of the irradiated energy can be directly used for bonding the solder bumps with a few seconds of bonding time. A flip-chip with 120 solder bumps was used for this experiment and the composition of the solder bump was Sn3.0Ag0.5Cu. The main processing parameters for IR laser flip-chip bonding were laser power, scanning speed, a spot size and UBM thickness. Taguchi methods were applied for optimizing these four main processing parameters. The optimized bump shape and its shear force were modeled and the experimental results were compared with them. The analysis results indicate that the bump shape and its shear force are dominantly influenced by laser power and scanning speed over a laser spot size. In addition, various effects of processing parameters for IR laser flip-chip bonding are presented and discussed.

• 대한금속재료학회지
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• 제50권10호
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• pp.785-792
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• 2012

A new flip chip structure consisting of interlocking joints locally surrounded by non-conductive adhesive was investigated in order to improve the contact resistance characteristics and prevent the parasitic capacitance increase. The average contact resistance of the interlocking joints was substantially reduced from $135m{\Omega}$ to $79m{\Omega}$ by increasing the flip chip bonding pressure from 85 MPa to 185 MPa. Improvement of the contact resistance characteristics at higher bonding pressure was attributed not only to the increased contact area between Cu chip bumps and Sn pads, but also to the severe plastic deformation of Sn pads caused during formation of the interlocking-joint structure. The parasitic capacitance increase due to the non-conductive adhesive locally surrounding the flip chip joints was estimated to be as small as 12.5%.

• Journal of Welding and Joining
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• 제29권6호
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• pp.65-70
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• 2011

The effect of flip chip bonding parameters on formation of intermetallic compounds (IMCs) between Au stud bumps and Sn-3.5Ag solder was investigated. In this study, flip chip bonding temperature was performed at $260^{\circ}C$ and $300^{\circ}C$ with various bonding times of 5, 10, and 20 sec. AuSn, $AuSn_2$ and $AuSn_4$ IMCs were formed at the interface of joints and (Au, Cu)$_6Sn_5$ IMC was observed near Cu pad side in the joint. At bonding temperature of $260^{\circ}C$, $AuSn_4$ IMC was dominant in the joint compared to other Au-Sn IMCs as bonding time increased. At bonding temperature of $300^{\circ}C$, $AuSn_2$ IMC clusters, which were surrounded by $AuSn_4$ IMC, were observed in the solder joint due to fast diffusivity of Au to molten solder with increased bonding temperature. Bond strength of Au stud bump joined with Sn-3.5Ag solder was about 23 gf/bump and fracture mode of the joint was intergranular fracture between $AuSn_2$ and $AuSn_4$ IMCs regardless bonding conditions.