• Title/Summary/Keyword: Flip Chip Bump

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Electro-migration Phenomenon in Flip-chip Packages (플립칩 패키지에서의 일렉트로마이그레이션 현상)

  • Lee, Ki-Ju;Kim, Keun-Soo;Suganuma, Katsuaki
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.4
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    • pp.11-17
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    • 2010
  • The electromigration phenomenon in lead-free flip-chip solder joint has been one of the serious problems. To understand the mechanism of this phenomenon, the crystallographic orientation of Sn grain in the Sn-Ag-Cu solder bump has been analyzed. Different time to failure and different microstructural changes were observed in the all test vehicle and bumps, respectively. Fast failure and serious dissolution of Cu electrode was observed when the c-axis of Sn grain parallel to electron flow. On the contrary of this, slight microstructural changes were observed when the c-axis of Sn perpendicular to electron flow. In addition, underfill could enhance the electromigration reliability to prevent the deformation of solder bump during EM test.

Effects of Intermetallic Compounds Formed during Flip Chip Process on the Interfacial Reactions and Bonding Characteristics (플립칩 공정시 반응생성물이 계면반응 및 접합특성에 미치는 영향)

  • Ha, Jun-Seok;Jung, Jae-Pil;Oh, Tae-Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.2
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    • pp.35-39
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    • 2012
  • We studied interfacial reaction and bonding characteristics of a flip chip bonding with the viewpoint of formation behavior of intermetallic compounds. For this purpose, Sn-0.7Cu and Sn-3Cu solders were reflowed on the Al/Cu and Al/Ni UBMs. When Sn-0.7Cu was reflowed on the Al/Cu UBM, no intermetallic compounds were formed at the solder/UBM interface. The $Cu_6Sn_5$ intermetallic compounds formed by reflowing Sn-3Cu solder on the Al/Cu UBM were spalled from the interface, resulting in delamination of the solder/UBM interface. On the other hand, the $(Cu,Ni)_6Sn_5$ intermetallic compounds were formed by reflowing of Sn-0.7Cu and Sn-3Cu on the Al/Ni UBM and the interfacial bonding between the Sn-Cu solders and the Al/Ni UBM was kept stable.

Precise composition control of Sn-3.0Ag-0.5Cu lead free solder bumping made by two binary electroplating (이원계 전해도금법에 의한 Sn-3.0Ag-0.5Cu 무연솔더 범핑의 정밀 조성제어)

  • Lee Se-Hyeong;Lee Chang-U;Gang Nam-Hyeon;Kim Jun-Gi;Kim Jeong-Han
    • Proceedings of the KWS Conference
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    • 2006.05a
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    • pp.218-220
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    • 2006
  • Sn-3.0Ag-0.5Cu solder is widely used as micro-joining materials of flip chip package(FCP) because of the fact that it causes less dissolution and has good thermal fatigue property. However, compared with ternary electroplating in the manufacturing process, binary electroplating is still used in industrial field because of easy to make plating solution and composition control. The objective of this research is to fabricate Sn-3.0Ag-0.5Cu solder bumping having accurate composition. The ternary Sn-3.0Ag-0.5Cu solder bumping could be made on a Cu pad by sequent binary electroplating of Sn-Cu and Sn-Ag. Composition of the solder was estimated by EDS and ICP-OES. The thickness of the bump was measured using SEM and the microstructure of intermetallic-compounds(IMCs) was observed by SEM and EDS. From the results, contents of Ag and CU found to be at $2.7{\pm}0.3wt%\;and\;0.4{\pm}0.1wt%$, respectively.

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HV-SoP Technology for Maskless Fine-Pitch Bumping Process

  • Son, Jihye;Eom, Yong-Sung;Choi, Kwang-Seong;Lee, Haksun;Bae, Hyun-Cheol;Lee, Jin-Ho
    • ETRI Journal
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    • v.37 no.3
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    • pp.523-532
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    • 2015
  • Recently, we have witnessed the gradual miniaturization of electronic devices. In miniaturized devices, flip-chip bonding has become a necessity over other bonding methods. For the electrical connections in miniaturized devices, fine-pitch solder bumping has been widely studied. In this study, high-volume solder-on-pad (HV-SoP) technology was developed using a novel maskless printing method. For the new SoP process, we used a special material called a solder bump maker (SBM). Using an SBM, which consists of resin and solder powder, uniform bumps can easily be made without a mask. To optimize the height of solder bumps, various conditions such as the mask design, oxygen concentration, and processing method are controlled. In this study, a double printing method, which is a modification of a general single printing method, is suggested. The average, maximum, and minimum obtained heights of solder bumps are $28.3{\mu}m$, $31.7{\mu}m$, and $26.3{\mu}m$, respectively. It is expected that the HV-SoP process will reduce the costs for solder bumping and will be used for electrical interconnections in fine-pitch flip-chip bonding.

Maskless Screen Printing Process using Solder Bump Maker (SBM) for Low-cost, Fine-pitch Solder-on-Pad (SoP) Technology

  • Choi, Kwang-Seong;Lee, Haksun;Bae, Hyun-Cheol;Eom, Yong-Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.4
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    • pp.65-68
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    • 2013
  • A novel bumping process using solder bump maker (SBM) is developed for fine-pitch flip chip bonding. It features maskless screen printing process. A selective solder bumping mechanism without the mask is based on the material design of SBM. Maskless screen printing process can implement easily a fine-pitch, low-cost, and lead-free solder-on-pad (SoP) technology. Its another advantage is ternary or quaternary lead-free SoP can be formed easily. The process includes two main steps: one is the thermally activated aggregation of solder powder on the metal pads on a substrate and the other is the reflow of the deposited powder on the pads. Only a small quantity of solder powder adjacent to the pads can join the first step, so a quite uniform SoP array on the substrate can be easily obtained regardless of the pad configurations. Through this process, an SoP array on an organic substrate with a pitch of 130 ${\mu}m$ is, successfully, formed.

Study on the Characteristics of Electroplated Solder: Comparison of Sn-Cu and Sn-Pb Bumps (무연 도금 솔더의 특성 연구: Sn-Cu 및 Sn-Pb 범프의 비교)

  • 정석원;정재필
    • Journal of Surface Science and Engineering
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    • v.36 no.5
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    • pp.386-392
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    • 2003
  • The electroplating process for a solder bump which can be applied for a flip chip was studied. Si-wafer was used for an experimental substrate, and the substrate were coated with UBM (Under Bump Metallization) of Al(400 nm)/Cu(300 nm)Ni(400 nm)/Au(20 nm) subsequently. The compositions of the bump were Sn-Cu and eutectic Sn-Pb, and characteristics of two bumps were compared. Experimental results showed that the electroplated thickness of the solders were increased with time, and the increasing rates were TEX>$0.45 <\mu\textrm{m}$/min for the Sn-Cu and $ 0.35\mu\textrm{m}$/min for the Sn-Pb. In the case of Sn-Cu, electroplating rate increased from 0.25 to $2.7\mu\textrm{m}$/min with increasing current density from 1 to 8.5 $A/dm^2$. In the case of Sn-Pb the rate increased until the current density became $4 A/dm^2$, and after that current density the rate maintains constant value of $0.62\mu\textrm{m}$/min. The electro plated bumps were air reflowed to form spherical bumps, and their bonded shear strengths were evaluated. The shear strength reached at the reflow time of 10 sec, and the strength was of 113 gf for Sn-Cu and 120 gf for Sn-Pb.

Aging Characteristics of Solder bump Joint for High Reliability Optical module (광모듈 솔더 접합부의 시효 특성에 관한 연구)

  • Kim, Nam-Kyu;Kim, Kyung-Seob;Kim, Nam-Hoon;Chang, Eui-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.204-207
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    • 2003
  • The flip chip bonding utilizing self-aligning characteristic of solder becomes mandatory to meet to tolerances for the optical device. In this paper, a parametric study of aging condition and pad size of sample was conducted. A TiW/Cu UBM structure was adopted and sample was aging treated to analyze the effect of intermetallic compound with time variation. After aging treatment, the tendency to decrease in shear strength was measured and the structure of the fine joint area was observed by using SEM, TEM and EDS. In result, the shear strength was decreased of about 20% in the $100{\mu}m$ sample at $170^{\circ}C$ aging compared with the maximum shear strength of same pad size sample. In the case of the $120^{\circ}C$ aging treatment, 17% of decrease in shear strength was measured at the $100{\mu}m$ pad size sample. Also, intremetallic compound of $Cu_6Sn_5$ and $Cu_3Sn$ were observed through the TEM measurement by using an FIB technique that is very useful to prepare TEM thin foil specimens from the solder joint interface.

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Formation of fine pitch solder bump with high uniformity by the tilted electrode ring (경사진 전극링을 이용한 고균일도의 미세 솔더범프 형성)

  • Ju, Chul-Won;Lee, Kyung-Ho;Min, Byoung-Gue;Kim, Seong-Il;Lee, Jong-Min;Kang, Young-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.323-327
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    • 2004
  • The bubble flow from the wafer surface during plating process was studied in this paper. The plating shape in the opening of photoresist becomes gradated shape in the fountain plating system, because bubbles from the wafer surface are difficult to escape from the deep openings, vias. So, we designed the tilted electrode ring contact to get uniform bump height on all over the wafer and evaluated the film uniformity by SEM and ${\alpha}-step$. In ${\alpha}-step$ measurement, film uniformities in the fountain plating system and the tilted electrode ring contact system were ${\pm}16.6%,\;{\pm}4%$ respectively.

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Ultrasonic Bonding of Au Stud Flip Chip Bump on Flexible Printed Circuit Board (연성인쇄회로기판 상에 Au 스터드 플립칩 범프의 초음파 접합)

  • Koo, Ja-Myeong;Kim, Yu-Na;Lee, Jong-Bum;Kim, Jong-Woong;Ha, Sang-Su;Won, Sung-Ho;Suh, Su-Jeong;Shin, Mi-Seon;Cheon, Pyoung-Woo;Lee, Jong-Jin;Jung, Seung-Boo
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.4
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    • pp.79-85
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    • 2007
  • This study was focused on the feasibility of ultrasonic bonding of Au stud flip chip bumps on the flexible printed circuit board (FPCB) with three different surface finishes: organic solderability preservative (OSP), electroplated Au and electroless Ni/immersion Au (ENIG). The Au stud flip chip bumps were successfully bonded to the bonding pads of the FPCBs, irrespective of surface finish. The bonding time strongly affected the joint integrity. The shear force increased with increasing bonding time, but the 'bridge' problem between bumps occurred at a bonding time over 2 s. The optimum condition was the ultrasonic bonding on the OSP-finished FPCB for 0.5 s.

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Underfill Flow Characteristics for Flip-Chip Packaging (플립칩 패키징 언더필 유동특성에 관한 연구)

  • Song, Yong;Lee, Sun-Beung;Jeon, Sung-Ho;Yim, Byung-Seung;Chung, Hyun-Seok;Kim, Jong-Min
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.3
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    • pp.39-43
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    • 2009
  • In this paper, the flow characteristics of underfill material driven by capillary action between flip-chip and substrate were investigated. Also, the effects of viscosity level and dispensing point of underfill on flow characteristics were investigated. Flip chip package size was $5mm{\times}5mm{\times}0.65^tmm$, the diameter of solder bump was 100 ${\mu}m$, and the pitch was 150 ${\mu}m$. It was full grid area-array type with 1024 I/Os. The glass substrate was used and the gap between the chip and substrate was 50 ${\mu}m$. For the experimental study, three different underfills with different viscous properties($2000{\sim}3700$ cps), and two different types of dispensing methods(center dot and edge dot) were used. The flow characteristics and filling time of underfill were investigated by using CCD camera. The results show that the edge flow was faster than center flow due to the edge effect, which was caused by the resistance of solder bumps. In case of edge dot dispensing type, the filling time was faster due to the large edge effect, compared to center dot dispensing type. Also, it was found that the underfill flow was faster and the filling time decreased as the viscosity level of underfill was decreased.

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