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Electro-migration Phenomenon in Flip-chip Packages  

Lee, Ki-Ju (오사카대학교 지능기능창성공학과)
Kim, Keun-Soo (오사카대학교 산업과학연구소)
Suganuma, Katsuaki (오사카대학교 산업과학연구소)
Publication Information
Journal of the Microelectronics and Packaging Society / v.17, no.4, 2010 , pp. 11-17 More about this Journal
Abstract
The electromigration phenomenon in lead-free flip-chip solder joint has been one of the serious problems. To understand the mechanism of this phenomenon, the crystallographic orientation of Sn grain in the Sn-Ag-Cu solder bump has been analyzed. Different time to failure and different microstructural changes were observed in the all test vehicle and bumps, respectively. Fast failure and serious dissolution of Cu electrode was observed when the c-axis of Sn grain parallel to electron flow. On the contrary of this, slight microstructural changes were observed when the c-axis of Sn perpendicular to electron flow. In addition, underfill could enhance the electromigration reliability to prevent the deformation of solder bump during EM test.
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