• Title/Summary/Keyword: Flexible semiconductor

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A Study on the Growth Temperature of Atomic Layer Deposition for Photocurrent of ZnO-Based Transparent Flexible Ultraviolet Photodetector (원자층 증착법의 성장온도에 따른 산화아연 기반 투명 유연 자외선 검출기의 광전류에 대한 연구)

  • Choi, Jongyun;Lee, Gun-Woo;Na, Young-Chae;Kim, Jeong-Hyeon;Lee, Jae-Eun;Choi, Ji-Hyeok;Lee, Sung-Nam
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.1
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    • pp.80-85
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    • 2022
  • ZnO-based transparent conductive films have been widely studied to achieve high performance optoelectronic devices such as next generation flexible and transparent display systems. In order to achieve a transparent flexible ZnO-based device, a low temperature growth technique using a flexible polymer substrate is required. In this work, high quality flexible ZnO films were grown on colorless polyimide substrate using atomic layer deposition (ALD). Transparent ZnO films grown from 80 to 200℃ were fabricated with a metal-semiconductor-metal structure photodetectors (PDs). As the growth temperature of ZnO film increases, the photocurrent of UV PDs increases, while the sensitivity of that decreases. In addition, it is found that the response times of the PDs become shorter as the growth temperature increases. Based on these results, we suggest that high-quality ZnO film can be grown below 200℃ in an atomic layer deposition system, and can be applied to transparent and flexible UV PDs with very fast response time and high photocurrent.

Development of Micro-hemisphere Flexible PDMS Film for Enhancing Light Extraction in Organic Light-emitting Devices (유기발광소자의 광추출 향상을 위한 미세 반구형 유연 필름 연구)

  • Baek, Dong-Hyun;Bae, Eun-Jeong;Maeng, Hyeongkyu;Shin, Ji Soo;Park, Young Wook
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.4
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    • pp.1-5
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    • 2022
  • We presented a micro hemi-sphere structure flexible film to improve the external quantum efficiency (EQE) in OLEDs. The micro hemi-sphere flexible film was fabricated with breath figure (BF) method and replica process. At 45 mg/mL of concentration, the size of the hemi-spheres was approximately 6.2 ㎛ were obtained which are the most circular shape. So, it was possible to yield the best performance with an improvement of 33 % in the EQE and the widest viewing angle ranging from 0° to 70°. As a result, the hemi-sphere film's size and distribution seem to play important roles in enhancing the EQE in OLEDs. Furthermore, the flexible hemi-sphere film based on polymeric materials could offer an effective, large-scale, mass-produced product and a simple process and approach to achieve high efficiency in flexible OLEDs.

Flexible biosensors based on field-effect transistors and multi-electrode arrays: a review

  • Kim, Ju-Hwan;Park, Je-Won;Han, Dong-Jun;Park, Dong-Wook
    • Journal of Semiconductor Engineering
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    • v.1 no.3
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    • pp.88-98
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    • 2020
  • As biosensors are widely used in the medical field, flexible devices compatible with live animals have aroused great interest. Especially, significant research has been carried out to develop implantable or skin-attachable devices for real-time bio-signal sensing. From the device point of view, various biosensor types such as field-effect transistors (FETs) and multi-electrode arrays (MEAs) have been reported as diverse sensing strategies. In particular, the flexible FETs and MEAs allow semiconductor engineering to expand its application, which had been impossible with stiff devices and materials. This review summarizes the state-of-the-art research on flexible FET and MEA biosensors focusing on their materials, structures, sensing targets, and methods.

Recent Advance of Flexible Organic Memory Device

  • Kim, Jaeyong;Hung, Tran Quang;Kim, Choongik
    • Journal of Semiconductor Engineering
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    • v.1 no.1
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    • pp.38-45
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    • 2020
  • With the recent emergence of foldable electronic devices, interest in flexible organic memory is significantly growing. There are three types of flexible organic memory that have been researched so far: floating-gate (FG) memory, ferroelectric field-effect-transistor (FeFET) memory, and resistive memory. Herein, performance parameters and operation mechanisms of each type of memory device are introduced, along with a brief summarization of recent research progress in flexible organic memory.

Analysis of Surface Characteristics for Clad Thin Film Materials (극박형 복합재료 필름의 표면 물성 분석에 대한 연구)

  • Lee, Jun Ha
    • Journal of the Semiconductor & Display Technology
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    • v.17 no.1
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    • pp.62-65
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    • 2018
  • In the era of the 4th Industrial Revolution, IoT products of various and specialized fields are being developed and produced. Especially, the generation of the artificial intelligence, robotic technology Multilayer substrates and packaging technologies in the notebook, mobile device, display and semiconductor component industries are demanding the need for flexible materials along with miniaturization and thinning. To do this, this work use FCCL (Flexible Copper Clad Laminate), which is a flexible printed circuit board (PCB), to implement FPCB (Flexible PCB), COF (Chip on Film) Use is known to be essential. In this paper, I propose a transfer device which prevents the occurrence of scratches by analyzing the mechanism of wrinkle and scratch mechanism during the transfer process of thin film material in which the thickness increases while continuously moving in air or solution.

Transfer Methods of Inorganic Thin Film Materials for Heterogeneously- Integration Flexible Semiconductor System (이종 집적 유연 반도체 시스템 구현을 위한 무기물 박막소재의 전사 방법)

  • Gyeong Hyeon Ju;Jeong Hyeon Kim;Sang Yoon Park;Kang Hyeon Kim;Han Eol Lee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.3
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    • pp.241-252
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    • 2024
  • With the recent development of emerging technologies, information acquisition and delivery between users has been actively conducted, and inorganic thin film transfer technology that effectively transfers various materials and devices is being studied to develop flexible electronic devices accordingly. This is aimed at innovative structural changes and functional improvement of electronic devices in the era of the Internet of Things (IoT). In particular, advanced technologies such as microLEDs are used to realize high-resolution flexible displays, and the possibility of heterogeneous integrated technologies can be presented by precisely transferring materials to substrates through various transfer process. This paper introduced physical, chemical, and self-assembly transfer methods based on inorganic thin film materials to implement heterogeneous integrated flexible semiconductor systems and introduces the results of application studies of semiconductor devices obtained through different transfer technologies. These studies are expected to bring about innovative changes in the field of smart devices, medical technology, and user interfaces in the future.

Technology of Flexible Semiconductor/Memory Device (유연 반도체/메모리 소자 기술)

  • Ahn, Jong-Hyun;Lee, Hyouk;Choa, Sung-Hoon
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.2
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    • pp.1-9
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    • 2013
  • Recently flexible electronic devices have attracted a great deal of attention because of new application possibilities including flexible display, flexible memory, flexible solar cell and flexible sensor. In particular, development of flexible memory is essential to complete the flexible integrated systems such as flexible smart phone and wearable computer. Research of flexible memory has primarily focused on organic-based materials. However, organic flexible memory has still several disadvantages, including lower electrical performance and long-term reliability. Therefore, emerging research in flexible electronics seeks to develop flexible and stretchable technologies that offer the high performance of conventional wafer-based devices as well as superior flexibility. Development of flexible memory with inorganic silicon materials is based on the design principle that any material, in sufficiently thin form, is flexible and bendable since the bending strain is directly proportional to thickness. This article reviews progress in recent technologies for flexible memory and flexible electronics with inorganic silicon materials, including transfer printing technology, wavy or serpentine interconnection structure for reducing strain, and wafer thinning technology.

가스압 변화에 따라 flexible 기판상에 제작한 Al이 첨가된 ZnO 박막의 특성

  • Kim Gyeong-Hwan;Jo Beom-Jin;Geum Min-Jong
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2006.05a
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    • pp.164-167
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    • 2006
  • In this paper, we prepared Al doped ZnO thin films by using facing targets sputtering method. Al doped ZnO thin film was deposited with different working pressure on flexible substrate. We prepared Al doped ZnO thin film at room temperature, because the flexible substrate has weak thermal resistance. From the results, we could obtain thin film with a resistivity of $8.4{\times}10^{-4}{\Omega}cm$, an average transmittance of over 80% and a film thickness of 200nm.

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Flexible Cable 가공기의 지능형 진단 시스템

  • 이호중;전경진;허용정
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2003.05a
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    • pp.64-67
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    • 2003
  • 본 논문에서 소개하고 있는 플렉시블 케이블(Flexible Cable) 가공기는 기존의 준자동적인 다수의 생산라인을 한 생산라인에 자동화하여 접목시킨 기기이다. 가공기에 문제점이 발생하였을 경우의 현상을 진단하기 위하여 제작자, 작업자 그리고 R&D엔지니어들의 지식을 수집하고 실제 발생 데이터를 근거로 지식베이스 시스템(knowledge-based system)을 구성하였다. 플렉시블 케이블(Flexible Cable) 가공기의 문제점 진단을 목표로 하여 수집된 지식들을 지식베이스화 하였고 이를 바탕으로 진단 시스템이 구축되었다. 가공기 작동 중 문제점이 발생하게 될 경우 전문가뿐만 아니라 비전문가도 본 논문에서 제안된 지능형 진단시스템을 사용하여 문제점을 빠르게 진단, 파악하는데 그 목적을 두고 있다.

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Recent Trend of International Standardization of Semiconductor Devices (반도체 소자 국제 표준화 최근 동향 연구)

  • Choa, Sung-Hoon;Han, Tae-Su;Kim, Wonjong
    • Journal of the Microelectronics and Packaging Society
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    • v.23 no.1
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    • pp.1-10
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    • 2016
  • Nowadays, the importance of role of the international standardization keeps increasing substantially. We have already known that international standards have a huge impact on many companies, industries and nations. So far, it has been thought that standardizations are needed after the new products come into the market and are mass-produced in order to encourage the use of the products, systems and services. Standardization will make the products more safe, efficient, and environmentally friendly for the users. However, in these days, a paradigm of the standardization has been changed. International standard becomes a tool for dominating global market and is the most important ingredients of the competitiveness and economic progress of the nation and enterprises. Many countries like Japan, Germany and U.S. use the standardization as an effective method to dominate the market and monopolized the new technologies. Therefore, worldwide competition for the standardization of the new technology become fierce. Korea is leading the technology in semiconductor field. However, activities of international standardization are not sufficient. In order to boost the standardization activities in Korea from industry, academia, and research institute, this paper briefly introduce the international standard organization and some critical issues for next-generation semiconductor memory such as flexible semiconductor, automobile semiconductor and wearable devices.