• Journal of the Korean institute of surface engineering
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• v.44 no.4
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• pp.137-143
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• 2011

The internal stress and magnetic properties (coercivity and squareness) of Ni-Fe nano thin film synthesized by electrodeposition method were studied as a function of acidic chloride bath conditions (composition and temperature) and current density. Fe deposition patterns were different depending on the temperature of the solution, the stress of film decreased with increasing the solution temperature, and the depending on the amount of Fe deposition showed a parabolic shape. The grain size of film was inversely proportional to stress of thin film. The internal stress of thin film and magnetic properties were deeply relevant, and the stress of thin film had a relationship with bath conditions and grain size of the thin film surface.

• 한국초전도학회:학술대회논문집
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• v.13
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• pp.72-72
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• 2003

• Food Science and Preservation
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• v.19 no.1
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• pp.7-11
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• 2012

This study was conducted to determine the effects of the humidity and gas composition on the quality of satsuma mandarins during their heat treatment, in an effort to reduce their acidity. To come up with different humidity and gas conditions, various plastic films were used. The fruits were wrapped with an 18-${\mu}m$ high-density polyethylene (HDPE) punched film, a 30-${\mu}m$ low-density polyethylene (LDPE) film, or a 100-${\mu}m$ LDPE film just before treatment at $30^{\circ}C$ for 55 hours. After heat treatment, the titratible acidity (TA) was significantly reduced while the soluble-solid content (SSC) showed no differences, which resulted in increased SSC/TA ratios in all the treatments. The fruits that were not wrapped with a film, however, which had low RH, developed higher ethanol and acetaldehyde contents than those wrapped with an 18-${\mu}m$ HDPE punched film, which had high RH and a similar gas composition. Among the films, the higher the $CO_2$ concentration in the film was, the more the ethanol and acetaldehyde contents increased, which induced more off-flavor. It was thus concluded that high humidity and normal gas composition are favorable conditions for heat treatment to reduce the acidity of satsuma mandarins.

• Korean Journal of Materials Research
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• v.13 no.1
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• pp.31-35
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• 2003

The intensity is measured as functions of both distance from filament to substrate and $CH_3$OH/($CH_3$OH＋$H_2$O) ratio by OES(Optical Emission Spectroscopy) to investigate the effects of activation species such as $H_{\alpha}$, $H_{\beta}$, H$\Upsilon\;C_3$, CH on diamond film growth.$ H_{\alpha}$ increases as $CH_3$OH composition decreases, while CH increases as $CH_3$OH composition increases. The intensity of $H_{\alpha}$ decreases as the distance increases and that of CH increases as the distance increases. The intensities of other activation species of $H_{\beta}$, H$\Upsilon\;C_3$, do not vary as a function of measured position distance. It varies randomly. It means that various parameters for depositing diamond thin film can be explained by the intensity(density) change of activation species, as a function of the distance of the filament.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.258-259
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• 2005

[ $CuInSe_2$ ] thin films were fabricated at various fabrication conditions (substrate temperature, sputtering pressure, BC/RF power, vapor deposition, heat treatment). And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInSe_2$ thin films with stoichiometric composition. $CuInSe_2$ thin film was well made at the heat treatment of 500[$^{\circ}C$] of SLG/Cu/In/Se stacked elemental layer which was prepared by sputter and thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $1.27\sim9.88\times10^{17}[cm^{-3}]$, $49.95\sim185[cm^2/V{\cdot}s]$ and $10^{-1}\sim10^{-2}[\Omega{\cdot}cm]$, respectively

• Journal of the Korean institute of surface engineering
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• v.44 no.6
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• pp.269-276
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• 2011

Phase evolution and tribological behavior of Cr-Mo-N multi compositional films with different interlayer were investigated. The films were deposited by hybrid PVD (Physical Vapor Deposition) system consisted of dc unbalanced magnetron (UBM) sputtering and arc ion plating (AIP) sources. A pure molybdenum (Mo) was used as sputtering target and also a pure Cr was used as AIP target to form the Cr-Mo-N films. Various growth planes were found, no textured surface, in all of the multi composition films. Maximum value of microhardness was measured in Cr-Mo-N film with Mo interlayer as 29 GPa. Composition film was mainly showed the aspect of the adhesive wear than CrN film. The friction coefficient was decreased from 0.6 for pure CrN coating to 0.35 for Cr-Mo-N film with Mo interlayer. This result may come from the formation of metal oxide tribo-layer which is known as solid lubricant during the wear test.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1060-1064
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• 2002

We have studied the effect of crystallization temperature, composition and film thickness, which are the fundamental processing parameters of lead zirconate titanate(PZT) thin film fabrication, in the respect of the piezoelectric properties by our pneumatic loading method(PLM). A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. Even though the piezoelectric properties of thin films are very critical factors in the micro-electro mechanical system(MEMS) and thin film sensor devices, a few reports for the piezoelectric characterization are provided for the last decade unlikely the bulk piezoelectric devices. We have found that the piezoelectric properties of thin films are improved as the increase of crystallization temperature up to 750$\^{C}$ and this behavior can be also explained by the analysis of dielectric polarization hysteresis loop, X-ray diffraction and scanning electron microscopy. The effect of Zr/Ti composition has been also studied. This gives us the fact that the maximum piezoelectricity is found near Morphotropic Phase Boundary(MPB) as bulk PZT system does.

• Journal of Sensor Science and Technology
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• v.21 no.4
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• pp.263-269
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• 2012

Al doped ZnO(AZO) thin films were deposited at different substrate temperatures by a continuous composition spread(CCS) method. Various compositions of Al doped ZnO thin films deposited at substrate temperatures between 0 and $250^{\circ}C$ were explored to find excellent electrical and optical properties. The AZO thin film deposited at $100^{\circ}C$ had the lowest resistivity, $9{\times}10^{-4}{\Omega}$ cm and its average transmittance at the 400 to 700 nm wavelength region was 92 %. Optimized composition of the AZO thin film which had the lowest resistivity and high transmittance was 3.13 wt% Al doped ZnO.

• Progress in Superconductivity
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• v.3 no.1
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• pp.120-124
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• 2001

To establish the deposition condition of YBCO thin film on MgO single crystal substrates, processing parameters of deposition temperature, chemical composition and oxygen partial pressure were controlled. When using a Ba-deficient composition of YB $a_{1.8}$ $Cu_3$$O_{x}$, non-superconducting phase like CuO, $CuYO_2$ were formed, but BaCu02 was formed together with Yl23 phase when the starting composition was Ba-rich ($YBa_{2.3}$ $Cu_3$ $O_{x}$). The epitaxially grown Yl23 phase was formed at 760-$810^{\circ}C$ and $P_{O2}$=0.29-0.91 Torr.r.r.r.

• Journal of the Semiconductor & Display Technology
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• v.10 no.3
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• pp.29-33
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• 2011

Film growth rate and composition variation are numerically analyzed during the selective area growth of InGaN on the GaN triangular stripe microfacet in this study. Both the vapor phase diffusion and the surface diffusion are considered to determine the In composition on the InGaN surface. To obtain the In composition on the surface, flux of In atoms due to the surface diffusion is added to the concentration determined from the Laplace equation which is governing the gas phase diffusion. The solution model is validated by comparing the growth rates from the analyses to the experimental results of GaN and InN films. The In composition and resulting wave length are increased when the surface diffusion is considered. The In content is also increased according to the increasing mask width. The effect of mask width to the In content and wave length is increasing in the case of a small open region.