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http://dx.doi.org/10.3740/MRSK.2003.13.1.031

OES Analysis for Diamond Film Growth by Vapor Activation Method Using CH3OH/H2O Gas  

Lee, Kwon-Jai (Department of Physics, Soongsil University)
Koh, Jae-Gui (Department of Physics, Soongsil University)
Shin, Jae-Soo (Department of Electronic Materials Science, Daejoen University)
Publication Information
Korean Journal of Materials Research / v.13, no.1, 2003 , pp. 31-35 More about this Journal
Abstract
The intensity is measured as functions of both distance from filament to substrate and $CH_3$OH/($CH_3$OH＋$H_2$O) ratio by OES(Optical Emission Spectroscopy) to investigate the effects of activation species such as $H_{\alpha}$, $H_{\beta}$, H$\Upsilon\;C_3$, CH on diamond film growth.$ H_{\alpha}$ increases as $CH_3$OH composition decreases, while CH increases as $CH_3$OH composition increases. The intensity of $H_{\alpha}$ decreases as the distance increases and that of CH increases as the distance increases. The intensities of other activation species of $H_{\beta}$, H$\Upsilon\;C_3$, do not vary as a function of measured position distance. It varies randomly. It means that various parameters for depositing diamond thin film can be explained by the intensity(density) change of activation species, as a function of the distance of the filament.
Keywords
HFCVD method; diamond film; OES; $H_{\alpha}$; $H_{\beta}$; $H_{\gamma}$;
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