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http://dx.doi.org/10.5369/JSST.2012.21.4.263

Effect of Substrate Temperature on Electrical and Optical Properties of Al Doped ZnO Thin Films by Continuous Composition Spread  

Jung, Keun (Electronic Materials Research Center, Korea Institute of Science and Technology)
Lee, Jin-Ju (Electronic Materials Research Center, Korea Institute of Science and Technology)
Choi, Won-Kook (Interface Control Research Center, Korea Institute of Science and Technology)
Yoon, Seok-Jin (Electronic Materials Research Center, Korea Institute of Science and Technology)
Choi, Ji-Won (Electronic Materials Research Center, Korea Institute of Science and Technology)
Publication Information
Journal of Sensor Science and Technology / v.21, no.4, 2012 , pp. 263-269 More about this Journal
Abstract
Al doped ZnO(AZO) thin films were deposited at different substrate temperatures by a continuous composition spread(CCS) method. Various compositions of Al doped ZnO thin films deposited at substrate temperatures between 0 and $250^{\circ}C$ were explored to find excellent electrical and optical properties. The AZO thin film deposited at $100^{\circ}C$ had the lowest resistivity, $9{\times}10^{-4}{\Omega}$ cm and its average transmittance at the 400 to 700 nm wavelength region was 92 %. Optimized composition of the AZO thin film which had the lowest resistivity and high transmittance was 3.13 wt% Al doped ZnO.
Keywords
Continuous Composition Spread; Transparent Conducting Oxides; Al Doped ZnO;
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