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Analysis of Film Growth in InGaN/GaN Quantum Wells Selective Area Metalorganic Vapor Phase Epitaxy including Surface Diffusion  

Im, Ik-Tae (Dept. of Mechanical Design Eng., College of Eng., Chonbuk National University)
Youn, Suk-Bum (Dept. of Mechanical Design Eng., College of Eng., Chonbuk National University)
Publication Information
Journal of the Semiconductor & Display Technology / v.10, no.3, 2011 , pp. 29-33 More about this Journal
Abstract
Film growth rate and composition variation are numerically analyzed during the selective area growth of InGaN on the GaN triangular stripe microfacet in this study. Both the vapor phase diffusion and the surface diffusion are considered to determine the In composition on the InGaN surface. To obtain the In composition on the surface, flux of In atoms due to the surface diffusion is added to the concentration determined from the Laplace equation which is governing the gas phase diffusion. The solution model is validated by comparing the growth rates from the analyses to the experimental results of GaN and InN films. The In composition and resulting wave length are increased when the surface diffusion is considered. The In content is also increased according to the increasing mask width. The effect of mask width to the In content and wave length is increasing in the case of a small open region.
Keywords
InGaN/GaN MQWs; metalorganic vapor phase epitaxy; selective area growth; vapor phase diffusion; surface diffusion;
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