• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.6
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• pp.390-397
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• 2001

A novel self-aligned ESD (Elevated Source Drain) MOSFET structure which can effectively reduce the GIDL (Gate-Induced Drain Leakage) current is proposed and analyzed. The proposed ESD structure is characterized by sidewall spacer and recessed-channel depth which are determined by dry-etching process. Elevation of the Source/Drain extension region is realized so that the low-activation effect caused by low-energy ion implantation can be avoided. Unlike the conventional LDD structures, it is shown that the GIDL current of the ESD structure is suppressed without sacrificing the maximum driving capability. The main reason for the reduction of GIDL current Is the decreased electric field at the point of the maximum band-to-band tunneling as the peak electric field is shifted toward the drain side.

• Geomechanics and Engineering
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• v.21 no.2
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• pp.201-206
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• 2020

A stress-induced brittle failure in deep tunneling generates spalling and slabbing, eventually causing a v-shaped notch formation. An empirical relationship for the depth of the notch to the maximum tangential stress assuming an equivalent circular cross-section was proposed (Martin et al. 1999). While this empirical approach has been well recognized in the industry and used as a design guideline in many projects, its applicability to a non-circular opening is worth revisiting due to the use of equivalent circular profile. Moreover, even though the extent of the notch also contributes to notch failure, it has not been estimated to date. When the estimate of both the depth and the extent of notch are combined, a practical and economically justifiable support design can be achieved. In this study, a new methodology to assess the depth as well as the extent of notch failure is developed. Field data and numerical simulations using the Cohesion Weakening Frictional Strengthening (CWFS) model were collected and correlated with the three most commonly accepted failure criteria (σ₁/σ₃, D_is=σ_max/σ_c, σ_dev/σ_cm). For the numerical analyses, the D-shaped tunnel was used since most civil tunnels are built to this profile. Inferential statistical analysis is applied to predict the failure range with a 95% confidence level. Considering its accuracy and simplicity, the new correlation can be used as an enhanced version of failure assessment.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.270-270
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• 2013

We have investigated the self-assembled structures of glutaric acid (HOOC-(CH2)3-COOH) on the Cu(110) surface as a function of coverage using Scanning Tunneling Microscopy (STM). At low coverage, glutaric acid molecules diffuse freely on Cu(110) surface at room temperature, thus they can't form ordered structures at this coverage. However, when we scanned the same area several times, novel structures have been created during scanning due to the field-induced self-assembly. Also, the induced structures are quite stable during continuous scanning process. At 0.25 ML, glutaric acid adsorbs as a bi-glutarate (-OOC(CH2)3-COO-) after annealing to 450 K producing a racemic conglomerate of coexisting mirror domains. Although the molecule is achiral, it forms chiral domains on the surface from adsorption-induced asymmetrization. At 0.5 ML coverage, zigzag structure is observed, and still gltutaric acid adsorbs as a bidentate configuration. This bi-glutarate structure is stable until 650. Finally, at 1ML, glutaric acid adsorbs as a mono-glutarate at room temperature forming close packed structures.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.4
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• pp.265-275
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• 2010

In this work, reliable methodology for device design is presented. Based on this method, the underlap length has been optimized for minimizing the gateinduced drain leakage (GIDL) in a 22-nm node 4-terminal (4-T) silicon-on-insulator (SOI) fin-shaped field effect transistor (FinFET) by TCAD simulation. In order to examine the effects of underlap length on GIDL more realistically, doping profile of the source and drain (S/D) junctions, carrier lifetimes, and the parameters for a band-to-band tunneling (BTBT) model have been experimentally extracted from the devices of 90-nm channel length as well as pnjunction test element groups (TEGs). It was confirmed that the underlap length should be near 15 nm to suppress GIDL effectively for reliable low standby power (LSTP) operation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.164-169
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• 2002

This paper mainly discusses the hard breakdown of 2.2-nm-thick $SiO_2$ films. It is shown that the hard breakdown event of a 2.2-nm-thick $SiO_2$ film greatly depends on the applied electric field. It is strongly suggested that the local weak spots created by applying a low initial stress to a 2.2-nm-thick $SiO_2$film resist the onset of hard breakdown. In other words, it is anticipated that the stored electrostatic energy is fast dissipated by trap-assisted tunneling in 2.2-nm-thick $SiO_2$ film. Consequently, it is strongly suggested that 2.2-nm-thick $SiO_2$ films are intrinsically quite robust.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.94-99
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• 2004

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

• Geomechanics and Engineering
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• v.29 no.3
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• pp.291-300
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• 2022

Tunnel boring machines combined with the earth pressure balanced shield method (EPB shield TBMs) have been adopted in urban areas as they allow excavation of tunnels with limited ground deformation through continuous and repetitive excavation and support. Nevertheless, the expansion of TBM construction requires much more minor and exquisitely controlled surface settlement to prevent economic loss. Several parametric studies controlling the tunnel's geometry, ground properties, and TBM operational factors assuming ordinary conditions for EPB shield TBM excavation have been conducted, but the impact of excessive excavation on the induced settlement has not been adequately studied. This study conducted a numerical evaluation of surface settlement induced by the ground loss from face imbalance, excessive excavation, and tail void grouting. The numerical model was constructed using FLAC3D and validated by comparing its result with the field data from literature. Then, parametric studies were conducted by controlling the ground stiffness, face pressure, tail void grouting pressure, and additional volume of muck discharge. As a result, the contribution of these operational factors to the surface settlement appeared differently depending on the ground stiffness. Except for the ground stiffness as the dominant factor, the order of variation of surface settlement was investigated, and the volume of additional muck discharge was found to be the largest, followed by the face pressure and tail void grouting pressure. The results from this study are expected to contribute to the development of settlement prediction models and understanding the surface settlement behavior induced by TBM excavation.

• Steel and Composite Structures
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• v.41 no.6
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• pp.831-850
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• 2021

Surface subsidence caused by mining subsidence has an impact on neighboring structures and utilities. In other words, subsurface voids created by mining or tunneling activities induce soil movement, exposing buildings to physical and/or functional destruction. Soil-structure is evaluated employing probability distribution laws to account for their uncertainty and complexity to estimate structural vulnerability. In this study, to investigate the displacement field and surface settlement profile caused by mining subsidence, on the basis of a Winklersoil model, analytical equations for the moment-rotation response ofsoil during mining induced ground movements are developed. To define the full static moment-rotation response, an equation for the uplift-yield state is constructed and integrated with equations for the uplift- and yield-only conditions. The constructed model's findings reveal that the inverse of the factor of safety (x) has a considerable influence on the moment-rotation curve. The maximal moment-rotation response of the footing is defined by X = 0:6. Despite the use of Winkler model, the computed moment-rotation response results derived from the literature were analyzed through the ELM-SVM hybrid of Extreme Learning Machine (ELM) and Support Vector Machine (SVM). Also, Monte Carlo simulations are used to apply continuous random parameters to assess the transmission of ground motions to structures. Following the findings of RMSE and R2, the results show that the choice of probabilistic laws of input parameters has a substantial impact on the outcome of analysis performed.

• Journal of the Korean Geotechnical Society
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• v.18 no.3
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• pp.51-59
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• 2002

This paper deals with development of a damage risk assessment system for adjacent buildings to under-passing tunnel face considering 3D-ground movement. The system consists of building and ground information module, monitoring data module, settlement evaluation module, and building damage risk assessment module. The major modules, settlement evaluation module and building damage assessment module, are based on settlement estimation model suggested by Attewell et al (1982) and the building damage assessment method by Mair et al. (1996). After estimating 3D-ground movements due to tunneling with settlement evaluation module, damage assessment far buildings is performed using building damage risk assessment module. The developed system has two major functions; 1) calculation of 3D-settlement with ground loss ($V_{s}$)or maximum settlement ($w_{max}$) and inflection point (i) using various empirical formulae, monitoring data, numerical results, and so on; 2) assessment of damage risk for adjacent buildings of arbitrary section with position change of tunnel face. The field data given by Boscadin and Cording (1989) leer the case of two-storied masonry building near the Metro tunnel in Washington D.C. was simulated to verify the applicability of the developed system.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.11
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• pp.1179-1185
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• 1991

Ultrathin Reoxidized Nitrided Oxides were formed by lamp heated rapid thermal annealing in oxyzen at temperatures of $1050^{\circ}C$-$1100^{\circ}C$ for 20, 40 seconds. The electrical characteristics of ultrathin films were evaluated by leakage current breakdown voltage. TDDB. FN tunneling. Nitridation and reoxidition condition dependence of charge trapping properties. i.e.. the flat band voltage shift $({\Delta}V_{FB})$ and the increase of charge-to-breakdown $(Q_{BD})$ induced by a high field stress where studied. As the results of analysis. rapid thermal reoxidation was achieved striking improvement of dielectric integrity, the charge to breakdown was increased and flat band voltage shift was reduced.