1 |
H. Satake and A. Toriumi, 'Dielectric breakdown mechanism of studied by the post-breakdown resistance statistics' IEEE Trans. Electron Devices, vol. 47, pp.741-745, 2000
ScienceOn
|
2 |
B. E. Weir et al., 'Gate oxide reliability projection to the sub-2 nm regime' Semicond. Sci. and Technol., vol. 15, pp. 455-461, 2000
DOI
ScienceOn
|
3 |
H. S. Momose, T. Ohguro, S. Nakamura, Y. Toyoshima, H. Ishiuchi and H. Iwai, 'Study of wafer origination dependence on performance and reliability of CMOS with direct-tunneling gate oxide' Dig.Tech. 2001 Symp. on VLSI Technology (Kyoto, June 2001), p. 77-78
|
4 |
S. Ikeda, M. Okihara, H. Uchida, and N. Hirashita, 'Cross-sectional transmission electron microscope studies on intrinsic breakdown spots of thin gate oxides' Jpn. J. Appl. Phys., vol. 36, pp. 2561-2564, 1997
DOI
|
5 |
D. J. DiMaria and E. Cartier, 'Mechanism for stress-induced leakage currents in thin silicon dioxide films,' J Appl. Phys., vol. 78, pp. 3883-3894, 1995
DOI
ScienceOn
|
6 |
D. J. DiMaria and J. H. Stathis, 'Ultimate limit for defect generation in ultra thin silicon dioxide' Appl. Phys. Lett., vol. 71, pp. 3230-3232, 1997
DOI
ScienceOn
|
7 |
M. Depas, T. Nigam and M. M. Heyns, 'Soft breakdown of ultra-thin gate oxide layers,' IEEE Trans.on Eletron Devices, vol. 43, no. 9, pp. 1499-1504, 1996
DOI
ScienceOn
|
8 |
H. Iwai and H. S. Momose, 'Ultra-thin gate oxides performance and reliability,' Tech. Dig. 1998 IEEE Int. Electron Devices Meeting, pp. 163-166
DOI
|
9 |
T. Sakura, H. Utsunomiya, Y. Kamakura, and K. Taniguchi, 'A detailed study of soft- and pre-soft-breakdowns in small geometry MOS structure,' Tech. Dig. 1998 IEEE Int. Electron Devices Meeting, pp. 183-186
DOI
|
10 |
M. Depas, T. Nigam, and M. Heyns, 'Definition of dielectric breakdown for ultra thin (<2 nm) gate oxides,' Solid-St. Electron, vol. 41, pp. 725-728, 1997
DOI
ScienceOn
|