• Title/Summary/Keyword: Field stop

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A Study on Switching Characteristics of 1,200V Trench Gate Field stop IGBT Process Variables (1,200V 급 Trench Gate Field stop IGBT 공정변수에 따른 스위칭 특성 연구)

  • Jo, Chang Hyeon;Kim, Dea Hee;Ahn, Byoung Sup;Kang, Ey Goo
    • Journal of IKEEE
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    • v.25 no.2
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    • pp.350-355
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    • 2021
  • IGBT is a power semiconductor device that contains both MOSFET and BJT structures, and it has fast switching speed of MOSFET, high breakdown voltage and high current of BJT characteristics. IGBT is a device that targets the requirements of an ideal power semiconductor device with high breakdown voltage, low VCE-SAT, fast switching speed and high reliability. In this paper, we analyzed Gate oxide thickness, Trench Gate Width, and P+Emitter width, which are the top process parameters of 1,200V Trench Gate Field Stop IGBT, and suggested the optimized top process parameters. Using the Synopsys T-CAD Simulator, we designed IGBT devices with electrical characteristics that has breakdown voltage of 1,470 V, VCE-SAT 2.17 V, Eon 0.361 mJ and Eoff 1.152 mJ.

A Study on Electrical Characteristics of Field Stop IGBT with Separated Gate Structure (분리된 게이트 구조를 갖는 필드 스톱 IGBT의 전기적 특성에 관한 연구)

  • HyeongSeong Jo;Jang Hyeon Lee;Kung Yen Lee;Ey Goo Kang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.6
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    • pp.609-613
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    • 2023
  • In this paper, a 1,200 V Si-based IGBT used in electric vehicles and new energy industries was designed. A field stop IGBT with a separate gate structure, which is the proposed structure, was designed to change trench depth and split gate width variables. Then, the general trench structure and electrical characteristics were compared and analyzed. As a result of conducting the trench depth experiment, it was confirmed that the breakdown voltage was the highest at 6 ㎛, and the on-state voltage drop was the lowest at 3.5 ㎛. In the separate gate width experiment, it was confirmed that the breakdown voltage decreased as the variable increased, and the on-state voltage drop increased. Therefore, it may be seen that it is preferable not to change the width of the separate gate. In addition, experiments show that there is no difference in on-state voltage drop compared to a structure in which a general field stop structure has a separate gate structure. In other words, it is determined that adding a dummy gate with a separate gate structure to the active cell will significantly improve the on-voltage drop characteristics, while confirming that the on-voltage drop does not change, and while having excellent characteristics in terms of breakdown voltage.

The Study on the Correlation between Traffic Signal Location and Stop Line Observance (신호기위치와 정지선 준수율과의 관계 연구)

  • Jung, Kwang-Bok;Kim, Jin-Tae;Lee, Yong-Taek;Lee, Don-Joo
    • International Journal of Highway Engineering
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    • v.9 no.1 s.31
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    • pp.29-38
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    • 2007
  • The Korea National Police Agency launched a campaign to encourage drivers in stop line observance and to discourage stop line violation by intensively imposing fines. It was to increase stop line observance of drivers and thus traffic safety. According to statistics, the stop line observance rate was increased over 80 % of drivers during the campaign but regressed to the past after the campaign. This paper delivers the effect of the location of traffic signal lights on driver's stop line observance and develops a guideline to improve highway traffic environment in long terms. Statistical tests conducted based on field data showed that the drivers' stop line observance increases when traffic signal lights are closely installed from a stop line. It was proposed from the study that traffic signal lights be installed $10{\sim}20m$ from a stop line.

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Case Analysis on Stop Motion Animation based on the Acceptance of New Technology : Focusing on 3D Printer & Special Effect Technology Application (신기술 수용 스톱 모션 애니메이션 사례분석 : 3D 프린터, 특수효과 기술 응용을 중심으로)

  • Zhang, Wan;Song, Seung-Keun
    • The Journal of the Korea Contents Association
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    • v.18 no.1
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    • pp.665-672
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    • 2018
  • The purpose of this study is to analyze the problem of existing stop motion animation and to apply 3D printer technology and computer special effect technology applied with latest technology as a solution to solve this problem. For this purpose, we review the history of stop motion animation and confirm how the technology applied to stop motion animation through previous research. As a result, we have overcome limitations of the existing stop motion animation limited to the cline cloth in terms of expression by using 3D printer like recently released and . Furthermore, the natural phenomenon, which is the biggest limitation of stop motion animation, was able to produce a unique work of stop motion animation rather than computer special effect processing. Therefore, in the stop-motion animation, the acceptance of 3D printer technology and computer special effects technology has enabled unlimited imagination and original expression. Recent technology-based stop-motion animation is expected to provide the foundation for the continued development of the animation field in the future.

Optical Design of an Off-Axial-Field Two-Mirror System with a Displaced Stop and a Secondary Mirror (조리개와 제 2거울이 횡이동된 비축시야 2반사 광학계 설계)

  • Nam, Ji-Woo;Lee, Jong-Ung
    • Korean Journal of Optics and Photonics
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    • v.31 no.6
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    • pp.304-313
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    • 2020
  • By using an off-axial field with an inverse Cassegrain system where the aperture stop is at the secondary mirror, the two-mirror system can be used for a wide-field objective. However, aberration corrections in conventional two-mirror systems are limited because the design parameters are too small. In this study, we present a new improved design of the off-axial-field two-mirror system. The new design has an independently displaced aperture stop and a secondary mirror. The new design parameters yield more improvement in correction for 5th-order coma and astigmatism, and better aberration balancing for the whole off-axial field. The spot sizes of the new design system are reduced to half of those for a conventional reference design, and the improvement effects are shown for the whole field evenly.

The Optimal Design of High Voltage Field Stop IGBT (고전압 Field Stop IGBT의 최적화 설계에 관한 연구)

  • Ahn, Byoung-Sup;Zhang, Lanxiang;Liu, Yong;Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.8
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    • pp.486-489
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    • 2015
  • Power semiconductor device has a very long history among semiconductor, since the invention of low-pressure bipolar transistor 1947, and so far from small capacity to withstand voltage-current, high-speed and high-frequency characteristics have been developed with high function. In this study, the PWM IC Switch to the main parts used in IGBT (insulated gate bipolar transistor) for the low power loss and high drive capability of the simulator to Synopsys' T-CAD used by the 1,700 V NPT Planar IGBT, 1,700 V FS was a study of the Planar IGBT, the results confirmed that IGBT 1,700 V FS Planar is making about 11 percent less than the first designed NPT Planar IGBT.

Analysis of Optical Flying Head Dynamics for Near-field Receding System (근거리장 광부상 헤드의 Loading 동특성 해석)

  • 은길수;김노유
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2002.05a
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    • pp.175-180
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    • 2002
  • Loading/Unloading(L/UL) mechanism has been considered to be an alternative to contact start-stop(CSS) mechanism which eliminates stiction and wear associated with frequent start and stop process. It has other advantages including increased areal density due to lower flying height, reduced power consumption, and improved shock resistance. In order for L/UL to be Implemented in Near-field recording system properly, dynamics of optical flying head must be understood and optimized. In this paper the dynamic characteristics during loading process is analyzed numerically to investigate the effect of design parameters such as loading speed. slider shape, and initia conditions on the dynamic reponses of flying head..

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Magnetically tunable narrow band stop and/or pass directional coupling YIG filter (YIG를 사용한 자계동조 방향성결합 협대혁 통과 및 차단 여파기)

  • Park, Gyu-Tae;Lee, Jong-Ak;Hwang, Geum-Chan
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.8 no.4
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    • pp.25-30
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    • 1971
  • Fabrication and measurements of the magnetically tunable YIG band pass or stop filter at X-band are discussed. Using two YIG spheres located at the region of r-f circularly polarized magnetic field between the strip lines, the pass or stop characteristics of the filter are obtained. In the case of band stop, the output level is typically 25db lower than the input power. Contrarily for the pass band, the pass band level is 22db higher than the stop frequency region. The experimental results are in good agreement with the theoretical values of FMR. Further it is shown that the structure can be used for a directional coupler.

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Study on The Preventive Structure of field Lead Connector's V-Notch on Synchronic (동기발전기 회전자 계자접속부의 예각변형 방지구조에 관한 연구)

  • Cho, Ji-Won;Cho, Chang-Joo
    • Proceedings of the KIEE Conference
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    • 2000.07b
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    • pp.937-939
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    • 2000
  • The preventive structure of field lead connector's V-notch on synchronous generator has been developed. The preventive structure of field lead, installed in the generator, prevent from V notch of field lead connector in rotor on daily start and stop (on-line). This development of study was performed at the Seoinchon combined cycle power plant on gas turbine generator. This preventive structure of field lead will be prevent from V-notch of field lead on synchronous generator's field.

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