• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.59-62
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• 2008

In this paper, we study ZnO-based a film bulk acoustic resonator (FBAR) using a multi-layered Bragg reflector. We insert chromium adhesion layers of 0.03 mm-thick to the Bragg reflector and improve the performance using thermal treatments. At operating frequency about 2.5 GHz, excellent resonance characteristics are observed in terms of good return loss and high quality factor.

• Proceedings of the IEEK Conference
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• 2003.07a
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• pp.362-365
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• 2003

본 논문에서는 세라믹 테잎의 적층 공정을 이용하는 LTCC(Low Temperature Co-fired Ceramics) 공정을 이용하여 FBAR duplexer 의 패키징을 위한 다층기판을 구현하였다. 구현된 다층기판에는 stripline 구조의 전송선로를 이용한 인덕터 및 위상 천이기를 내장 시키게 되는데, 인덕터의 경우 길이 변수를 통한 인덕턴스의 변화 추이를, 위상 천이기의 경우 선 폭 변수를 통한 특성 임피던스의 변화 추이를 통해 각 개별 소자에 대한 설계·제작·측정을 하였고 추출한 데이터를 실제 회로 설계 시 적용하였다.

• Journal of information and communication convergence engineering
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• v.4 no.3
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• pp.108-110
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• 2006

Film bulk acoustic resonators for radio frequency wireless applications are presented. Various simulations and modeling were carried out. The impedance of a five-layered FBAR showed almost the same trend of the wideband characteristics as that of an ideal FBAR, but the characteristics of the higher modes appear to be much more suppressed. In addition, the wideband impedance decreased with increasing device size. The resonance characteristics depend strongly on the physical dimensions.

• Journal of information and communication convergence engineering
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• v.3 no.3
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• pp.131-136
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• 2005

The effects of the deposition temperature on the growth characteristics of the ZnO films were studied for film bulk acoustic wave resonator (FBAR) device applications. All films were deposited using a radio frequency (RF) magnetron sputtering technique. It was found that the growth characteristics of the ZnO films have a strong dependence on the deposition temperature from 25 to $350^{\circ}C$. The ZnO films deposited below $200^{\circ}C$ exhibited reasonably good columnar grain structures with a highly preferred c-axis orientation while those above 200°C showed very poor columnar grain structures with a mixed-axis orientation. This study seems very useful for the future FBAR device applications.

• Journal of information and communication convergence engineering
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• v.5 no.4
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• pp.316-319
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• 2007

This paper presents some methods to improve the resonance characteristics of film bulk acoustic-wave resonator (FBAR) devices. The FBAR devices were fabricated on multilayer Bragg reflectors (BR) into which very thin chromium (Cr) adhesion layers were inserted, followed by several kinds of thermal annealing processes. These methods resulted in an excellent device improvement in terms of return loss and Q-factors.

• Journal of information and communication convergence engineering
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• v.5 no.4
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• pp.320-323
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• 2007

This paper presents the resonance characteristics of the ZnO-based FBAR devices with multilayered Bragg reflectors with Cr adhesion layer inserted between $SiO_2$ and W layers. Due to the post- annealing, the return loss ($S_{11}$) and series/parallel quality factor are significantly improved when compared with the non-post annealing. This post-annealing method seems to be a very efficient way to improve the resonance characteristics of FBAR devices.

• Journal of information and communication convergence engineering
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• v.6 no.1
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• pp.34-37
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• 2008

Effects of the addition of Cr adhesion layer to $W/SiO_2$ multilayer Bragg reflectors on the resonance characteristics of film bulk acoustic wave resonator (FBAR) devices are presented. Main resonance peaks could be significantly shifted to higher frequency, mainly due to the addition of Cr adhesion layer to multilayer Bragg reflectors and control of the bottom electrode thickness as well. The FBAR devices with the Cr adhesion layer in Bragg reflectors could result in much more improved resonance characteristics at about 3 GHz in terms of return loss and Q-factor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.156-159
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• 2002

Film Bulk Acoustic wave Resonator (FBAR) using thin piezoelectric films can be fabricated as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents a MMIC compatible Suspended FBAR using surface micromachining. It is possible to make Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$membrane by using surface micromachining and its good effect is to remove the substrate silicon loss. FBAR was made on 2$\mu\textrm{m}$ multi-layered membrane using CVD process. According to our result, Fabricated film bulk acoustic wave resonator has two adventages. First, in the respect of device Process, our Process of the resonator using surface micromachining is very simple better than that of resonator using bull micromachining. Second, because of using the multiple layer, thermal expansion coefficient is compensated, so, the stress of thin film is reduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.768-771
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• 2003

Nowadays, the study on the ceramic components and modules used in telecommunication system is being performed. Duplexer is the one of the most important components and has the role of dividing Rx and Tx signal. Duplexer including the FBAR is being done vigorously LTCC is used for package like SAW package, duplexer package. In our research, LTCC material is used for FBAR duplexer package and photo-lithography for the fine line phase shifter. The good characteristics, low loss and good isolation, of duplexer is obtained by the fine line phase shifter having high characteristic impedance of stripline.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.381-384
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• 2003

In this paper, cobalt (Co)-electrode FBAR devices fabricated on seven-layered Bragg Reflectors are presented along with their resonance characteristics. ZnO films are used as the resonating material in FBAR devices where the Co electrode is 3000$\AA$ thick. All processes are preformed in an RF magnetron sputtering system. As a result of characterization, the resonance characteristics are observed to depend strongly on the quality of ZnO film and Bragg Reflectors. In addition, the FBAR devices with W/SiO$_2$ reflectors show good resonance characteristics in term of return loss and quality-factor (Q-factor).