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Improvement of Resonance Characteristics by Post-Annealing in FBAR Devices  

Lee, Jae-Young (School of Engineering, Information and Communications University(ICU))
Mai, Linh (School of Engineering, Information and Communications University(ICU))
Yoon, Gi-Wan (School of Engineering, Information and Communications University(ICU))
Publication Information
Journal of information and communication convergence engineering / v.5, no.4, 2007 , pp. 320-323 More about this Journal
Abstract
This paper presents the resonance characteristics of the ZnO-based FBAR devices with multilayered Bragg reflectors with Cr adhesion layer inserted between $SiO_2$ and W layers. Due to the post- annealing, the return loss ($S_{11}$) and series/parallel quality factor are significantly improved when compared with the non-post annealing. This post-annealing method seems to be a very efficient way to improve the resonance characteristics of FBAR devices.
Keywords
FBAR; return loss; quality factor; annealing;
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