• Journal of the Korean Magnetics Society
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• v.19 no.6
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• pp.203-208
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• 2009

Magnetic and Ka-band absorbing properties have been investigated in Ti-Co substituted M-type barium hexaferrites with $BaTi_{0.5}Co_{0.5}Fe_{11}O_{19}$ composition. The ferrite powders were prepared by conventional ceramic processing technique and used as absorbent fillers in ferrite-rubber composites. The magnetic properties were measured by vibrating sample magnetometer. The complex permeability and dielectric constant were measured by using the WR-28 rectangular waveguide and network analyzer in the frequency range 26.5~40 GHz. For the Ti-Co substituted M-hexaferrites, the ferromagnetic resonance is observed at Ka-band (29.4 GHz). The matching frequency and matching thickness are determined by using the solution map of impedance matching. A wide band microwave absorbance is predicted with controlled ferrite volume fraction and absorber thickness.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.8
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• pp.105-111
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• 2004

In this paper, millimeter-wave high gain and broadband MHEMT cascode amplifiers were designed and fabricated. The 0.1 ${\mu}{\textrm}{m}$ InGaAs/InAlAs/GaAs Metamorphic HEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 640 mA/mm of drain current density, 653 mS/mm of maximum transconductance. The current gain cut-off frequency(f$_{T}$) is 173 GHz and the maximum oscillation frequency(f$_{max}$) is 271 GHz. By using the CPW transmission line, the cascode amplifier was designed the matched circuit for getting the broadband characteristics. The designed amplifier was fabricated by the MHEMT MIMIC process that was developed through this research. As the results of measurement, the 1 stage amplifier obtained 3 dB bandwidth of 37 GHz between 31.3 to 68.3 GHz. Also, this amplifier represents the S21 gain with the average 9.7 dB gain in bandwidth and the maximum gain of 11.3 dB at 40 GHz. The 2 stage amplifier has the broadband characteristics with 3 dB bandwidth of 29.5 GHz in the frequency range from 32.5 to 62.0 GHz. The 2 stage cascode amplifier represents the high gain characteristics with the average gain of 20.4 dB in bandwidth and the maximum gain of 22.3 dB at 36.5 GHz.z.z.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.11
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• pp.1240-1247
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• 2008

A twisted inverted-F antenna(TIFA) is proposed for a dual-band application. The TIFA features a twisted line for dual bands and a parasitic line for additional resonance. The proposed antenna has wideband characteristics at the high frequency band due to the merge of the resonances of the twisted line and the parasitic line. The electric size of the antenna is $0.109{\lambda}{\times}0.025{\lambda}{\times}0.0025{\lambda}$, whose length is about 44% of that of a conventional inverted-F antenna. The fabricated antenna on a thin FR4 substrate was measured to operate at 960 MHz with a bandwidth of 47 MHz, and at 1.8 GHz with a bandwidth of 289 MHz for $S_{11}$ less than -5 dB; the radiation efficiencies were 49% and 57%, respectively.

• Korean Journal of Optics and Photonics
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• v.19 no.5
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• pp.343-348
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• 2008

This study was carried out to commercialize FTTH by developing a burst mode optical receiver for E-PON. The optical receiver was manufactured by minimizing the capacitance of a photodiode to improve sensitivity for meeting 10, 20 km OLT Rx standard of E-PON at the transmission speed of 1.25 Gb/s. When bit-error ratio is $10^{-12}$ and PRBS is $2^5-1$, sensitivity is -26 dBm, loud/soft ratio is 23 dB. Both preamble time and guard time were set to 102.4 ns (128 bit). After comparing a photodiode whose capacitance is 0.53 pF with another photodiode whose capacitance has been minimized to 0.26 pF, we could see that sensitivity improved to 0.7 dBm and so did bandwidth to 190 MHz of burst mode for the optical receiver manufactured by the photodiode whose capacitance is 0.26 pF.

• Journal of Korea Society of Industrial Information Systems
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• v.12 no.4
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• pp.119-125
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• 2007

In this paper, a miniaturized PCB-integrated antenna is proposed for bluetooth applications. The proposed antenna is a modified form of the printed inverted F antenna where the size reduction is achieved by employing the meander strip for the resonant length part of the radiator. The antenna dimension is optimized using the commercial electromagnetic software MWSTM. The designed antenna is fabricated by the standard photo-etching technique and its performance is measured. The fabricated antenna shows a bandwidth of 125MHz centered at 2.45GHz and a gail of -0.23dBi. The size of the proposed antenna is $9.65mm{\times}5.95mm$ corresponding to the 55 percent of the area of the existing printed inverted F antenna.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.8 s.338
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• pp.53-60
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• 2005

Recently, sub-micron CMOS technologies have taken the place of III-V materials in a number of areas in integrated circuit designs, in particular even for the applications of gjgabit optical communication applications due to its low cost, high integration level, low power dissipation, and short turn-around time characteristics. In this paper, a four-channel transimpedance amplifier (TIA) array is realized in a standard 0.35mm CMOS technology Each channel includes an optical PIN photodiode and a TIA incorporating the fully differential regulated cascode (RGC) input configuration to achieve effectively enhanced transconductance(gm) and also exploiting the inductive peaking technique to extend the bandwidth. Post-layout simulations show that each TIA demonstrates the mid-band transimpedance gain of 59.3dBW, the -3dB bandwidth of 2.45GHz for 0.5pF photodiode capacitance, and the average noise current spectral density of 18.4pA/sqrt(Hz). The TIA array dissipates 92mw p in total from a single 3.3V supply The four-channel RGC TIA array is suitable for low-power, high-speed optical interconnect applications.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.10 s.352
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• pp.90-97
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• 2006

We report our research work on the millimeter-wave broadband amplifier integrating the shunt peaking technology with the cascode configuration. The millimeter-wave broadband cascode amplifier on MIMIC technology was designed and fabricated using $0.1{\mu}m\;{\Gamma}-gate$ GaAs PHEMT, CPW, and passive library. The fabricated PHEMT has shown a transconductance of 346.3 mS/mm, a current gain cut off frequency ($f_T$) of 113 GHz, and a maximum oscillation frequency ($f_{max}$) of 180 GHz. To prevent oscillation of designed cascode amplifier, a parallel resistor and capacitor were connected to drain of common-gate device. For expansion of the bandwidth and flatness of the gain, we inserted the short stub into bias circuits and the compensation transmission line between common-source device and common-gate device, and then their lengths were optimized. Also, the input and output stages were designed using the matching method to obtain the broadband characteristic. From the measurement, we could confirm to extend bandwidth and flat gain by integrating the shunt peaking technology with the cascode configuration. The cascode amplifier shows the broadband characteristic from 19 GHz to 53.5 GHz. Also, the average gain of this amplifier is about 6.5 dB over the bandwidth.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39B no.7
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• pp.440-448
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• 2014

A $4{\times}10$ Gb/s Transimpedance Amplifier (TIA) array is implemented in $0.13{\mu}m$ CMOS process technology, which will be used in the receiver of TWDM-PON system. A technology for bandwidth enhancement of a given $4{\times}10$ Gb/s TIA presented under inductor peaking technology and a single 1.2V power supply based low voltage design technology. It achieves 3 dB bandwidth of 7 GHz in the presence of a 0.5 pF photodiode capacitance. The trans-resistance gain is $50dB{\Omega}$, while 48 mW/ 1channel from a 1.2 V supply. The input sensitivity of the TIA is -27 dBm. The chip size is $1.9mm{\times}2.2mm$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.11A
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• pp.918-923
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• 2009

In this paper, a design method of the compact narrow band filter on the microstrip board is proposed using complementary split-ring resonators(CSRRs). The design technique of this filter is based on cascading filter stages consisting of the combination of circular CSRRs, capacitive gaps between patches, and inductive grounded stubs with the meander configuration. By these means, it was possible to get the nearly symmetric frequency responses, adjustable bandwidths, compact sizes. And also excellent characteristic of the out-of-band rejection is achieved in contrast to the conventional filter design technique. The measured insertion shows good results about -4.0dB at the center frequency($f_0=1GHz$) and passband return loss is less than -9.4dB. The 3dB fractional bandwidth(FBW) is approximately 4%. The results of the frequency response measured on the fabricated band pass filter substrate show satisfactory agreement with the simulated frequency responses by the HFSS in the region of interest.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.6
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• pp.119-124
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• 2008

Transimpedance amplifier(TIA) is the most significant element to determine the performance of the optical receiver, and thus the TIA must satisfy tile design requirements of high gain and wide bandwidth. In f)is paper, we propose a novel single chip optical receiver that exploits an analog adaptive equalizer and a limiting amplifier to enhance the gain and bandwidth performance, respectively. The proposed optical receiver is designed by using a $0.13{\mu}m$ CMOS process and its post-layout simulations show $120dB{\Omgea}$ transimpedance gain and 5.88GHz bandwidth. The chip core occupies the area of $0.088mm^2$, due to utilizing the negative impedance converter circuit rather than using on-chip passive inductors.