• 제목/요약/키워드: Experimental bias

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Optimum Condition and Color Mechanism for Gold Color Glaze in Diopside Crystallization (Diopside 금색 결정 유약의 발색 기구)

  • Kim, Gumsun;Lim, Seong-Ho;Lee, Byung-Ha
    • Korean Journal of Materials Research
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    • v.23 no.5
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    • pp.286-292
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    • 2013
  • Generally, the color gold has had a biased conception due to its traditional use. Thus, this bias has resulted in a lack of usage of golden glaze on ceramics and also a lack of extensive studies of such glazes. In this paper, optimum conditions and mechanism of formation of gold color crystallization glaze containing $Fe_2O_3$(hematite), which is developed for gold colors of ceramic glazes, were studied. Experimental result showed that there are pyroxene based on diopside and $TiO_2$ phase in the base of a crystallization glaze with a value of $TiO_2$ of 6 wt% confirmed by XRD and Raman Spectroscopy. When $Fe_2O_3$ was used as a colorant for the gold color, the $TiO_2$ peak became extinct and the intensity of the diopside peak was sharper. Feldspar of 60 wt%, talc of 20 wt% and limestone of 20 wt% were used as the starting materials and these were tested using a three component system. The best result of test was selected and extended to its vicinity as an experiment to determine $TiO_2$ and $Fe_2O_3$ contents. The glaze with $TiO_2$ of 6 wt% and $Fe_2O_3$ of 12 wt% addition showed stable pyroxene based diopside crystals and the development of gold color. This gold color was obtained with CIE-$L^*a^*b^*$ values of 51.27, 4.46, 16.15 (a grayish yellow brown color), which was gained using the following firing conditions: temperature increasing speed $5^{\circ}C$/min, holding for 1 h at $1280^{\circ}C$, annealing speed $3^{\circ}C$/min till $1100{\circ}C$, holding for 2 h at $1100{\circ}C$, and finally natural annealing.

Application of Graphene in Photonic Integrated Circuits

  • Kim, Jin-Tae;Choe, Seong-Yul;Choe, Chun-Gi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.196-196
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    • 2012
  • Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, has grabbled appreciable attention due to its extraordinary mechanical, thermal, electrical, and optical properties. Based on the graphene's high carrier mobility, high frequency graphene field effect transistors have been developed. Graphene is useful for photonic components as well as for the applications in electronic devices. Graphene's unique optical properties allowed us to develop ultra wide-bandwidth optical modulator, photo-detector, and broadband polarizer. Graphene can support SPP-like surface wave because it is considered as a two-dimensional metal-like systems. The SPPs are associated with the coupling between collective oscillation of free electrons in the metal and electromagnetic waves. The charged free carriers in the graphene contribute to support the surface waves at the graphene-dielectric interface by coupling to the electromagnetic wave. In addition, graphene can control the surface waves because its charge carrier density is tunable by means of a chemical doping method, varying the Fermi level by applying gate bias voltage, and/or applying magnetic field. As an extended application of graphene in photonics, we investigated the characteristics of the graphene-based plasmonic waveguide for optical signal transmission. The graphene strips embedded in a dielectric are served as a high-frequency optical signal guiding medium. The TM polarization wave is transmitted 6 mm-long graphene waveguide with the averaged extinction ratio of 19 dB at the telecom wavelength of $1.31{\mu}m$. 2.5 Gbps data transmission was successfully accomplished with the graphene waveguide. Based on these experimental results, we concluded that the graphene-based plasmonic waveguide can be exploited further for development of next-generation integrated photonic circuits on a chip.

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Some Insights into the Basic QA/QC for the Greenhouse Gas Analysis: Methane and Carbon Dioxide (온실가스 기기분석의 정도관리를 위한 고려사항 연구 - CH4과 CO2를 중심으로 -)

  • Jeong, Jae-Hak;Lim, Ho-Soo;Kim, Ki-Hyun;Bae, Wi-Sup;Jeon, Eui-Chan
    • Journal of Korean Society for Atmospheric Environment
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    • v.22 no.5
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    • pp.712-718
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    • 2006
  • In order to investigate the analytical uncertainties associated with sampling and analysis of major greenhouse gaseous pollutants(carbon dioxide and methane), we attempted to quantify their adsorptive loss due to the contact with the container wall(such as Tedlar bag and vial). Using the GC/FID method, some basic experimental parameters(such as reproducibility and method detection limit) have been evaluated as part of the essential QA/QC The reproducibilities of carbon dioxide and methane were estimated as 2.02 and 0.2%, respectively. In addition, method detection limits were measured as 0.61 and 0.06 ng, respectively. A test of sample loss rate has also been made for Tedlar bag and vial by assessing the absolute amount of sample loss on the wall. By transferring the samples contained in Tedlar bag to various sizes of Tedlar bags, we measured differences in the absolute loss quantity due to such transfer. In addition, we also examined such loss mechanism as a function of elapsed time and light penetration rate for vial. As results, carbon dioxide and methane have shown about 2% of sample loss due to such contact. It is also noticed that the amount of loss with vial surface is lower than that of Tedlar bag. Therefore, field collection of greenhouse gases using various container types should be made more cautiously to minimize the possibility of sample loss and bias related to such loss.

Reliability analysis of reinforced concrete haunched beams shear capacity based on stochastic nonlinear FE analysis

  • Albegmprli, Hasan M.;Cevik, Abdulkadir;Gulsan, M. Eren;Kurtoglu, Ahmet Emin
    • Computers and Concrete
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    • v.15 no.2
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    • pp.259-277
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    • 2015
  • The lack of experimental studies on the mechanical behavior of reinforced concrete (RC) haunched beams leads to difficulties in statistical and reliability analyses. This study performs stochastic and reliability analyses of the ultimate shear capacity of RC haunched beams based on nonlinear finite element analysis. The main aim of this study is to investigate the influence of uncertainty in material properties and geometry parameters on the mechanical performance and shear capacity of RC haunched beams. Firstly, 65 experimentally tested RC haunched beams and prismatic beams are analyzed via deterministic nonlinear finite element method by a special program (ATENA) to verify the efficiency of utilized numerical models, the shear capacity and the crack pattern. The accuracy of nonlinear finite element analyses is verified by comparing the results of nonlinear finite element and experiments and both results are found to be in a good agreement. Afterwards, stochastic analyses are performed for each beam where the RC material properties and geometry parameters are assigned to take probabilistic values using an advanced simulating procedure. As a result of stochastic analysis, statistical parameters are determined. The statistical parameters are obtained for resistance bias factor and the coefficient of variation which were found to be equal to 1.053 and 0.137 respectively. Finally, reliability analyses are accomplished using the limit state functions of ACI-318 and ASCE-7 depending on the calculated statistical parameters. The results show that the RC haunched beams have higher sensitivity and riskiness than the RC prismatic beams.

An Analysis of the Effect of Government Support on Automation and Smart Factory (자동화 및 스마트 공장 구축에 대한 정부 지원사업의 효과 분석)

  • Kang, Jung-Seok;Cho, Keun-Tae
    • Journal of Korea Technology Innovation Society
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    • v.21 no.2
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    • pp.738-766
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    • 2018
  • The purpose of this paper is to figures out the impact on the business performance based on the case studies about the establishment of automated smart factories supported by the government. In this study, the effectiveness of supporting business is verified by comparing supported company with non-supported ones using methods such as T-test and ANOVA. The PSM method was used to solve the selection bias issue between the experimental group and the controlled group. The research results have shown that the effect of the supporting business to the automated system was tenuous, and the amount of sales and research and development costs was increased after a certain schedule passed in case of the supporting project to the smart factory. There is some time lag to appear the effect of the government supporting businesses and the supporting business to the automated system leads to long term sales increase by increasing parameters like research and development costs rather than direct influence. Therefore, this research will be useful information for the process of establishing useful basic data and policies which helps to secure new budget Government Supporting Businesses and find ways improve the business.

Application of Pulsed Plasmas for Nanoscale Etching of Semiconductor Devices : A Review (나노 반도체 소자를 위한 펄스 플라즈마 식각 기술)

  • Yang, Kyung Chae;Park, Sung Woo;Shin, Tae Ho;Yeom, Geun Young
    • Journal of Surface Science and Engineering
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    • v.48 no.6
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    • pp.360-370
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    • 2015
  • As the size of the semiconductor devices shrinks to nanometer scale, the importance of plasma etching process to the fabrication of nanometer scale semiconductor devices is increasing further and further. But for the nanoscale devices, conventional plasma etching technique is extremely difficult to meet the requirement of the device fabrication, therefore, other etching techniques such as use of multi frequency plasma, source/bias/gas pulsing, etc. are investigated to meet the etching target. Until today, various pulsing techniques including pulsed plasma source and/or pulse-biased plasma etching have been tested on various materials. In this review, the experimental/theoretical studies of pulsed plasmas during the nanoscale plasma etching on etch profile, etch selectivity, uniformity, etc. have been summarized. Especially, the researches of pulsed plasma on the etching of silicon, $SiO_2$, and magnetic materials in the semiconductor industry for further device scaling have been discussed. Those results demonstrated the importance of pulse plasma on the pattern control for achieving the best performance. Although some of the pulsing mechanism is not well established, it is believed that this review will give a certain understanding on the pulsed plasma techniques.

Characterization of Via Etching in $CHF_3/CF_4$ Magnetically Enhanced Reactive Ion Etching Using Neural Networks

  • Kwon, Sung-Ku;Kwon, Kwang-Ho;Kim, Byung-Whan;Park, Jong-Moon;Yoo, Seong-Wook;Park, Kun-Sik;Bae, Yoon-Kyu;Kim, Bo-Woo
    • ETRI Journal
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    • v.24 no.3
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    • pp.211-220
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    • 2002
  • This study characterizes an oxide etching process in a magnetically enhanced reactive ion etching (MERIE) reactor with a $CHF_3/CF_4$ gas chemistry. We use a statistical $2^{4-1}$ experimental design plus one center point to characterize the relationships between the process factors and etch responses. The factors that we varied in the design include RF power, pressure, and gas composition, and the modeled etch responses were the etch rate, etch selectivity to TiN, and uniformity. The developed models produced 3D response plots. Etching of $SiO_2$ mainly depends on F density and ion bombardment. $SiO_2$ etch selectivity to TiN sensitively depends on the F density in the plasma and the effects of ion bombardment. The process conditions for a high etch selectivity are a 0.3 to 0.5 $CF_4$ flow ratio and a -600 V to -650 V DC bias voltage according to the process pressure in our experiment. Etching uniformity was improved with an increase in the $CF_4$ flow ratio in the gas mixture, an increase in the source power, and a higher pressure. Our characterization of via etching in a $CHF_3/CF_4$ MERIE using neural networks was successful, economical, and effective. The results provide highly valuable information about etching mechanisms and optimum etching conditions.

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A Novel External Resistance Method for Extraction of Accurate Effective Channel Carrier Mobility and Separated Parasitic Source/Drain Resistances in Submicron n-channel LDD MOSFET's (새로운 ERM-방법에 의한 미세구조 N-채널 MOSFET의 유효 캐리어 이동도와 소스 및 드레인 기생저항의 정확한 분리 추출)

  • Kim, Hyun-Chang;Cho, Su-Dong;Song, Sang-Jun;Kim, Dea-Jeong;Kim, Dong-Myong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.12
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    • pp.1-9
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    • 2000
  • A new method, the external resistance method (ERM method), is proposed for accurate extraction of the gate bias-dependent effective channel carrier mobility (${\mu}_{eff}$) and separated parasitic source/drain resistances ($R_S$ and $R_D$) of n-channel MOSFET's. The proposed ERM method is applied to n-channel LDD MOSFETs with two different gate lengths ($W_m/L_m=30{\mu}m/0.6{\mu}m,\;30{\mu}m/1{\mu}m$) in the linear mode of current-voltage characteristics ($I_D-V_{GS},\;V_{DS}$). We also considered gate voltage dependence of separated $R_2$ and $R_D$ in the accurate modeling and extraction of effective channel carrier mobility. Good agreement of experimental data is observed in submicron n-channel LDD MOSFETs. Combining with capacitance-voltage characteristics, the ERM method is expected to be very useful for accurate and efficient extraction of ${\mu}_{eff},\;R_D,\;R_S$, and other characteristic parameters in both symmetric and asymmetric structure MOSFET's in which parasitic resistances are critical to the improvement of high speed performance and reliability.

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A Design of an Improved Linguistic Model based on Information Granules (정보 입자에 근거한 개선된 언어적인 모델의 설계)

  • Han, Yun-Hee;Kwak, Keun-Chang
    • Journal of the Institute of Electronics Engineers of Korea CI
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    • v.47 no.3
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    • pp.76-82
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    • 2010
  • In this paper, we develop Linguistic Model (LM) based on information granules as a systematic approach to generating fuzzy if-then rules from a given input-output data. The LM introduced by Pedrycz is performed by fuzzy information granulation obtained from Context-based Fuzzy Clustering(CFC). This clustering estimates clusters by preserving the homogeneity of the clustered patterns associated with the input and output data. Although the effectiveness of LM has been demonstrated in the previous works, it needs to improve in the sense of performance. Therefore, we focus on the automatic generation of linguistic contexts, addition of bias term, and the transformed form of consequent parameter to improve both approximation and generalization capability of the conventional LM. The experimental results revealed that the improved LM yielded a better performance in comparison with LM and the conventional works for automobile MPG(miles per gallon) predication and Boston housing data.

Study of Program and Erase Characteristics for the Elliptic GAA SONOS Cell in 3D NAND Flash Memory (3차원 낸드 플레쉬에서 타원형 GAA SONOS 셀의 프로그램과 삭제 특성 연구)

  • Choi, Deuk-Sung;Lee, Seung-Heui;Park, Sung-Kye
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.11
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    • pp.219-225
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    • 2013
  • Program and erase characteristics of the elliptic gate all around (e-GAA) SONOS cell have been studied as the variation of eccentricity of the channel. An analytic program and erase model for the elliptic GAA SONOS cell is proposed and evaluated. The model shows that the ISPP (incremental-step-pulse programming) property is changed non-linearly as the eccentricity of the e-GAA SONOS cell is increased. It is differently from the well known linear relationship for that of 2D SONOS and even 3D circular SONOS cell with program bias. We can find that the simulation results of ISPP characteristics are in accord with the experimental data.