• 통합자연과학논문집
• /
• 제7권1호
• /
• pp.1-4
• /
• 2014

Distributed Bragg reflector porous silicon of different characteristics were formed to determine their optical constants in the visible wavelength range using a periodic square wave current between low and high current densities. The surface and cross-sectional SEM images of distributed Bragg reflector porous silicon were obtained using a cold field emission scanning electron microscope. The surface image of distributed Bragg reflector porous silicon indicates that the distributions of pores are even. The cross-sectional image illustrates that the multilayer of distributed Bragg reflector porous silicon exhibits a depth of few microns and applying of square current density during the etching process results two distinct refractive indices in the contrast. Distributed Bragg reflector porous silicon exhibited a porosity depth profile that related directly to the current-time profile used in etch. Its free-standing film was obtained by applying an electro-polishing current.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 하계학술대회 논문집 D
• /
• pp.1553-1555
• /
• 1999

Recently, $SrBi_2Ta_2O_9$(SBT) and $Pb(ZrTi)O_3$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) showing higher read/write speed, lower power consumption and nonvolartility. Bi-layered SBT thin film has appeared as the most prominent fatigue free and low operation voltage for use in nonvolatile memory. To highly integrate FRAM, SBT thin film should be etched. A lot of papers on SBT thin film and its characteristics have been studied. However, there are few reports about SBT thin film due to difficulty of etching. In order to investigate properties of etching of SBT thin film, SBT thin film was etched in $CF_4$/Ar gas plasma using magnetically enhanced inductively coupled plasma (MEICP) system. When $CF_4/(CF_4+Ar)$ is 0.1, etch rate of SBT thin film was $3300{\AA}/min$, and etch rate of Pt was $2495{\AA}/min$. Selectivities of SBT to Pt. $SiO_2$ and photoresist(PR) were 1.35, 0.6 and 0.89, respectively. With increasing $CF_4$ gas, etch rate of SBT thin film and $P_t$ decreased.

• Restorative Dentistry and Endodontics
• /
• 제45권1호
• /
• pp.6.1-6.8
• /
• 2020

Objectives: This study investigated the effects of a hydrofluoric acid (HA; solution of hydrogen fluoride [HF] in water)-based smart etching (SE) solution at an elevated temperature on yttria-stabilized tetragonal zirconia polycrystal (Y-TZP) ceramics in terms of bond strength and morphological changes. Materials and Methods: Eighty sintered Y-TZP specimens were prepared for shear bond strength (SBS) testing. The bonding surface of the Y-TZP specimens was treated with 37% phosphoric acid etching at 20℃-25℃, 4% HA etching at 20℃-25℃, or HA-based SE at 70℃-80℃. In all groups, zirconia primers were applied to the bonding surface of Y-TZP. For each group, 2 types of resin cement (with or without methacryloyloxydecyl dihydrogen phosphate [MDP]) were used. SBS testing was performed. Topographic changes of the etched Y-TZP surface were analyzed using scanning electron microscopy and atomic force microscopy. The results were analyzed and compared using 2-way analysis of variance. Results: Regardless of the type of resin cement, the highest bond strength was measured in the SE group, with significant differences compared to the other groups (p < 0.05). In all groups, MDP-containing resin cement yielded significantly higher bond strength values than MDP-free resin cement (p < 0.05). It was also shown that the Y-TZP surface was etched by the SE solution, causing a large change in the surface topography. Conclusions: Bond strength significantly improved when a heated HA-based SE solution was applied to the Y-TZP surface, and the etched Y-TZP surface was more irregular and had higher surface roughness.

• Restorative Dentistry and Endodontics
• /
• 제25권1호
• /
• pp.56-62
• /
• 2000

The purpose of this study was to assess the effects of restorative materials on the marginal leakage of wedge-shaped class V cavity. The study was performed in vitro in 25 defect-free permanent, extracted teeth. Wedge-shaped class V cavities were prepared and then the teeth were randomly selected and restored according to the following. Group A : restoration with Tetric Ceram(composite resin) Group B : restoration with Tetric flow(flowable resin) Group C : restoration with Compoglass after acid etching(compomer) Group D : restoration with Compoglass(compomer) Group E : restoration with Fuji II LC improved(resin-modified GIC) After thermocycling, the specimens were immersed in 5% basic fuchsin solution for 6 hours and sectioned longitudinally through the center of the restoration. The degree of marginal leakage was measured as the extent of dye penetration under the stereomicroscope. The data were analysed using one-way ANOVA. When significant differences found, multiple comparisons were made using Duncan's Multiple Range Test. The results were as follows: 1. The occlusal margins of all groups except for Fuji II LC improved showed lesser leakage than gingival margins and there was statistically significant difference(p<0.05). 2. At the occlusal margins, group A, B showed same marginal leakage scores, and others were decreased as group C, D, E in that order. There were statistically significant difference between group A, Band group D, E, group C and group E(p<0.05). 3. At the gingival margins, group B, C showed same marginal leakage scores, and others were decreased as group A, D, E in that order. But there was statistically significant difference between group B, C and group E(p<0.05). 4. In the Compoglass restoration, acid-etching technique was beneficial for marginal sealing ability at all of margins. But there was no statistically significant difference (p>0.05). In the restorations for wedge-shaped class V cavities, resin restoration with acid etching technique is recommended.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2010년도 추계학술대회 초록집
• /
• pp.48.1-48.1
• /
• 2010

단결정 실리콘 태양전지 제조 공정이 진행되는 과정에서 각종 오염물에 의해 표면이 오염된다. 태양전지의 효율 개선을 위한 표면 texturing 공정은 주로 wet etch을 주로 사용한다. Wet etch 공정 시 주로 사용되는 KOH 용액은 texturing 후 실리콘 웨이퍼 표면에 K+ 이온을 남기고 이는 태양전지 표면에서의 불순물로 작용하여 효율을 저하시키는 요인이 된다. 이를 제거하기 위해 불산 및 오존에 의한 세정 공정이 추가로 필요로 하게 된다. 이러한 공정을 최소화 하며 잔존하는 알칼리 금속도 제거하기 위해, etchant로 알카리 용액이 아닌 ethylenediamine을 사용하여 texturing 후 KOH 용액과 비교해 보았다.

• 한국항해항만학회:학술대회논문집
• /
• 한국항해항만학회 2000년도 추계학술대회논문집
• /
• pp.21-24
• /
• 2000

Ferroelectric YMnO$_3$thin films are excellent dielectric materials for high integrated ferroelectric random access memory (FRAM) with metal-ferroelectric-silicon field effect transistor (MFSFET) structure. In this study, YMnO$_3$thin films were etched with Cl$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$thin films is 285 $\AA$/min under Cl$_2$/Ar of 10/0, 600 W/-200 V and 15 mTorr. The selectivities of YMnO$_3$over CeO$_2$and $Y_2$O$_3$are 2.85, 1.72, respectively. The results of x-ray photoelectron spectroscopy (XPS) reflect that Y is removed dominantly by chemical reaction between Y and Cl, while Mn is removed more effective by Ar ion bombardment than chemical reaction. The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. The etch profile of the etched YMnO$_3$film is approximately 65$^{\circ}$and free of residues at the sidewall.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제3권1호
• /
• pp.27-32
• /
• 2003

Highly reproducible side-wall process for the fabrication of the fine gate length as small as 40nm was developed. This process was utilized to fabricate 40nm InGaAs HEMTs with the 65% strained channel. With the usage of the dual $SiO_2$ and $SiN_x$ dielectric layers and the proper selection of the etching gas, the final gate length (Lg) was insensitive to the process conditions such as the dielectric over-etching time. From the microwave measurement up to 40GHz, extrapolated fT and fmax as high as 371 and 345 GHz were obtained, respectively. We believe that the developed side-wall process would be directly applicable to finer gate fabrication, if the initial line length is lessened below the l00nm range.

• 통합자연과학논문집
• /
• 제3권2호
• /
• pp.78-83
• /
• 2010

DBR/Host dual porous silicons containing DBR and host structure were prepared and their optical properties were characterized using Ocean Optics spectrometer. In this dual porous silicon, single porous silicon layer was used as host layer for possible biomolecule and drug materials and DBR porous silicon layer was used for signal transduction due to the recognition of molecules. Optical reflection spectrum of dual porous silicon displayed only DBR reflection but Fabry-Perot fringe pattern. DBR reflection band of dual porous silicon shifted to the shorter wavelength as the etching time of host layer increased. Cross-sectional FE-SEM image of dual porous silicon displayed a thickness of about 20 micrometer for DBR porous silicon layer. Developed etching technology could be useful to prepare DBR porous silicon which exhibited specific reflection resonance at the required wavelength and to provide an label-free biosensors and drug delivery materials.

• 한국세라믹학회지
• /
• 제46권5호
• /
• pp.441-446
• /
• 2009

Dense crack-free yttria film with 10 $\mu m$ thickness was prepared on aluminum by aerosol deposition. X-ray diffraction pattern on the film showed that it contained the same crystalline phase as the raw powder. Transmission electron microscopy revealed a nanostructured yttria film with grains smaller than 100 nm. Tensile adhesion strength between the film and aluminum substrate was 57.8 $\pm$ 6.3MPa. According to the etching test with $CF_4-O_2$ plasma, the etching rate of the yttria film was 1/100 that of quartz, 1/10 that of sintered alumina and comparable to that of sintered yttria.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.105-106
• /
• 2006

The ferroelectric materials of the PZT, SBT attracted much attention for application to ferroelectric random access memory (FRAM) devices. Through the last decade, the lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for the ferroelectric products due to its higher remanant polarization and the ability to withstand higher coercive fields. FRAM has been currently receiving increasing attention for one of future memory devices due to its ideal memory properties such as non-volatility, high charge storage, and faster switching operations. In this study, we first applied the damascene process using chemical mechanical polishing (CMP) to the fabricate the $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitor in order to solve the problems of plasma etching such as low etching profile and ion charging. The structural characteristics were compared with specimens before and after CMP process of PZT films. The scanning electron microscopy (SEM) analysis was performed to compare the morphology surface characteristics of $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ capacitors. The densification by the vertical sidewall patterning and charging-free ferroelectric capacitor could be obtained by the damascene process without remarkable difference of the characteristics.