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http://dx.doi.org/10.13160/ricns.2014.7.1.1

Fabrication and Characterization of Free-Standing DBR Porous Silicon Film  

Um, Sungyong (Department of Chemistry, Chosun University)
Sohn, Honglae (Department of Chemistry, Chosun University)
Publication Information
Journal of Integrative Natural Science / v.7, no.1, 2014 , pp. 1-4 More about this Journal
Abstract
Distributed Bragg reflector porous silicon of different characteristics were formed to determine their optical constants in the visible wavelength range using a periodic square wave current between low and high current densities. The surface and cross-sectional SEM images of distributed Bragg reflector porous silicon were obtained using a cold field emission scanning electron microscope. The surface image of distributed Bragg reflector porous silicon indicates that the distributions of pores are even. The cross-sectional image illustrates that the multilayer of distributed Bragg reflector porous silicon exhibits a depth of few microns and applying of square current density during the etching process results two distinct refractive indices in the contrast. Distributed Bragg reflector porous silicon exhibited a porosity depth profile that related directly to the current-time profile used in etch. Its free-standing film was obtained by applying an electro-polishing current.
Keywords
DBR; Refractive Index; Porous Silicon;
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