• 제목/요약/키워드: Etch resistance

검색결과 68건 처리시간 0.024초

P-pillar 식각 각도에 따른 Super Junction MOSFET의 전기적 특성 분석에 관한 연구 (Electrical Characteristics of Super Junction MOSFET According to Trench Etch Angle of P-pillar)

  • 강이구
    • 한국전기전자재료학회논문지
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    • 제27권8호
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    • pp.497-500
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    • 2014
  • In this paper, we analyze electrical characteristics of n/p-pillar layer according to trench angle which is the most important characteristics of SJ MOSFET and core process. Because research target is 600 V class SJ MOSFET, so conclusively trench angle deduced 89.5 degree to implement the breakdown voltage 750 V with 30% margin rate. we found that on resistance is $22mohm{\cdot}cm^2$ and threshold voltage is 3.5 V. Moreover, depletion layer of electric field distribution also uniformly distributes.

Highly Tunable Block Copolymer Self-assembly for Nanopatterning

  • 정연식;정재원
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 춘계학술발표대회
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    • pp.6.1-6.1
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    • 2011
  • Nanoscale block copolymer (BCP) patterns have been pursued for applications in sub-30 nm nanolithography. BCP self-assembly processing is scalable and low cost, and is well-suited for integration with existing semiconductor fabrication techniques. However, one of the major technical challenges for BCP self-assembly is limited tunability in pattern geometry, dimension, and functionality. We suggest methods for extending the degree of tunability by choosing highly incompatible polymer blocks and utilizing solvent vapor treatment techniques. Siloxane BCPs have been developed as self-assembling resists due to many advantages such as high etch-selectivity, good etch-resistance, long-range ordering, and reduced line-edge roughness. The large incompatibility leads to extensive degree of pattern tunability since the effective volume fraction can be easily manipulated by solvent-based treatment techniques. Thus, control of the microdomain size, periodicity, and morphology is possible by changing the vapor pressure and the mixing ratio of selective solvents. This allows a range of different pattern geometry such as dots, lines and holes and critical dimension simply by changing the processing conditions of a given block copolymer without changing a polymer chain length. We demonstrate highly extensive tunability (critical dimension ~6~30 nm) of self-assembled patterns prepared by a siloxane BCP with extreme incompatibility.

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Etchant for Dissolving Thin Layer of Ag-Cu-Au Alloy

  • Utaka, Kojun;Komatsu, Toshio;Nagano, Hiroo
    • Corrosion Science and Technology
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    • 제6권6호
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    • pp.304-307
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    • 2007
  • As to the reflection electrode of LCD (liquid crystal displays), silver-copper-gold alloy (hereafter, it is called as ACA (Ag98%, Cu1%, Au1%)) is an effective material of which weathering resistance can be improved more compared with pure silver. However, there is a problem that gold remains on the substrate as residues when ACA is etched in cerium ammonium nitrate solution or phosphoric acid. Gold can not be etched in these etchants as readily as the other two alloying elements. Gold residue has actually been removed physically by brushing etc. This procedure causes damage to the display elements. Another etchant of iodine/potassium iodide generally known as one of the gold etchants can not give precise etch pattern because of remarkable difference in etching rates among silver, copper and gold. The purpose of this research is to obtain a practical etchant for ACA alloy. The results are as follows. The cyanogen complex salt of gold generates when cyanide is used as the etchant, in which gold dissolves considerably. Oxygen reduction is important as the cathodic reaction in the dissolution of gold. A new etchant of sodium cyanide / potassium ferricyanide whose cathodic reduction is stronger than oxygen, can give precise etch patterns in ACA alloy swiftly at room temperature.

알루미늄 음극박의 에치 피트 성장 (Growth of Etch Pits on Aluminium Cathode Film)

  • 김홍일;김성한;김영삼;신진식;박수길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.338-339
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    • 2005
  • The wider surface of the aluminum foil, electrochemically very important and it is necessary to increase the surface area. A study has been made of the fabrication condition for etching cube texture of high purity aluminium foil and of electrochemical etching of the aluminium foil. In the present work, it is shown there exists a relation between the influence of the pre-treatment time in the NaOH & HCI solution and $H_2SO_4$ concentration in the conversion solution. Also effect of temperature during AC etching was also studied. Result of the etched aluminum film is shown in the typical SEM images. Its electrochemical characteristics were investigated by cyclic voltammetry. And effects of current density and frequency is also reported. Cyclic voltammogram showed that the protective oxide film was formedon the inner surfaces of etch pit. the frequency influence resistance of oxide film in AC etching.

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Comprehensive Performance Analysis of Interconnect Variation by Double and Triple Patterning Lithography Processes

  • Kim, Youngmin;Lee, Jaemin;Ryu, Myunghwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권6호
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    • pp.824-831
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    • 2014
  • In this study, structural variations and overlay errors caused by multiple patterning lithography techniques to print narrow parallel metal interconnects are investigated. Resistance and capacitance parasitic of the six lines of parallel interconnects printed by double patterning lithography (DPL) and triple patterning lithography (TPL) are extracted from a field solver. Wide parameter variations both in DPL and TPL processes are analyzed to determine the impact on signal propagation. Simulations of 10% parameter variations in metal lines show delay variations up to 20% and 30% in DPL and TPL, respectively. Monte Carlo statistical analysis shows that the TPL process results in 21% larger standard variation in delay than the DPL process. Crosstalk simulations are conducted to analyze the dependency on the conditions of the neighboring wires. As expected, opposite signal transitions in the neighboring wires significantly degrade the speed of signal propagation, and the impact becomes larger in the C-worst metals patterned by the TPL process compared to those patterned by the DPL process. As a result, both DPL and TPL result in large variations in parasitic and delay. Therefore, an accurate understanding of variations in the interconnect parameters by multiple patterning lithography and adding proper margins in the circuit designs is necessary.

F316 오스테나이트 스테인리스강의 상변태 및 입계부식저항성에 미치는 입열의 영향 (Effects of Heat Inputs on Phase Transformation and Resistance to Intergranular Corrosion of F316 Austenitic Stainless Steel)

  • 정규석;이인성;김순태
    • Corrosion Science and Technology
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    • 제19권3호
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    • pp.146-155
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    • 2020
  • To elucidate the effect of heat inputs on phase transformation and resistance to intergranular corrosion of F316 austenitic stainless steel (ASS), thermodynamic calculations of each phase and time-temperature-transformation diagram were conducted using JMaPro simulation software, oxalic acid etch test, double-loop electrochemical potentiokinetic reactivation test (DL-EPR), field emission scanning electron microscopy with energy dispersive spectroscopy, and transmission electron microscopy analyses of Cr carbide (Cr23C6), austenite phase and ferrite phase. F316 ASS containing a relatively low C content of 0.043 wt% showed a slightly sensitized microstructure (acceptably dual structure) due to a small amount of Cr carbide precipitated at heat affected zone irrespective of heat inputs. Based on results of DL-EPR test, although heat input was increased, the ratio of Ir to Ia was only increased very slightly due to a slight sensitization. Therefore, heat inputs have little influences on resistance to intergranular corrosion of F316 austenitic stainless steel containing 0.043 wt% C.

Al2O3 Free 다성분계 유리의 CF4/O2/Ar 내플라즈마 특성 (CF4/O2/Ar Plasma Resistance of Al2O3 Free Multi-components Glasses)

  • 민경원;최재호;정윤성;임원빈;김형준
    • 반도체디스플레이기술학회지
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    • 제21권3호
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    • pp.57-62
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    • 2022
  • The plasma resistance of multi-component glasses containing La, Gd, Ti, Zn, Y, Zr, Nb, and Ta was analyzed in this study. The plasma etching was performed via inductively coupled plasma-reactive ion etching (ICP-RIE) using CF4/O2/Ar mixed gas. After the reaction, the glass with a low fluoride sublimation temperature and high content of P, Si, and Ti elements showed a high etching rate. On the other hand, the glass containing a high fluoride sublimation temperature component such as Ca, La, Gd, Y, and Zr exhibited high plasma resistance because the etch rate was lower than that of sapphire. Glass with low plasma resistance increased surface roughness after etching or nanoholes were formed on the surface, but glass with high plasma resistance showed little change in surface microstructure. Thus, the results of this study demonstrate the potential for the development of plasma-resistant glasses (PRGs) with other compositions besides alumino-silicate glasses, which are conventionally referred to as plasma-resistant glasses.

용접 공정 디자인에 따른 클래드강의 기계적 성질 변화 (Change of Mechanical Properties of Clad Steel According to the Welding Process Design)

  • 이정현;박재원
    • 한국생산제조학회지
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    • 제22권3호
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    • pp.372-379
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    • 2013
  • In this study, we investigated the traits of the clad metals used in hot-rolled clad steel plates. We examined the sensitization and mechanical properties of STS 316 steel plate and carbon steel (A516) under the specific circumstances of post heat treatment and whether a weld was multilayered and thick or repeated because of repairs. The test conditions were as follows. The clad steel plates were butt-welded using FCAW/SAW, and the heat treatment was conducted at $625^{\circ}C$, for 80, 160, 320, 640, or 1280 min. The change in the corrosion resistance was evaluated in these specimens. In the case of the carbon steel (A516), as the heat treatment time increased, the annealing effect caused the tensile strength to decrease. The micro- hardness gradually increased and then decreased after 640 min. The elongation and contraction of the area increased gradually. An oxalic acid etch test and EPR test on STS316, a clad metal, showed a STEP structure and no sensitization. From the test results for the multi-layered and repair welds, it could be concluded that there is no effect on the corrosion resistance of clad metals. In summary, the purpose of this study was to suggest some considerations when developing on-site techniques and evaluate the sensitization of stainless steels.

과부하 방지용 마이크로머시닝 세라믹 박막형 압력센서의 제작 (The Fabrication of a Micromachined Ceramic Thin-Film Pressure Sensor with High Overpressure Tolerance)

  • 임병권;최성규;이종춘;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.731-734
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    • 2002
  • This paper describes on the fabrication and characteristics of a ceramic thin-film pressure sensor based on Ta-N strain gauges for harsh environment applications. The Ta-N thin-film strain gauges are sputter deposited onto a micromachined Si diaphragms with buried cavity for overpressure protectors. The proposed device takes advantages of the good mechanical properties of single crystalline Si as diaphragms fabricated by SDB and electrochemical etch-stop technology, and in order to extend the operating temperature range, it incorporates relatively the high resistance, stability and gauge factor of Ta-N thin-films. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability. The sensitivity is $1.097{\sim}1.21mV/V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

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Optimization of a-IGZO Thin-Film Transistors for OLED Applications

  • Chung, Hyun-Joong;Yang, Hui-Won;Kim, Min-Kyu;Jeong, Jong-Han;Ahn, Tae-Kyung;Kim, Kwang-Suk;Kim, Eun-Hyun;Kim, Sung-Ho;Im, Jang-Soon;Choi, Jong-Hyun;Park, Jin-Seong;Jeong, Jae-Kyeong;Mo, Yeon-Gon;Kim, Hye-Dong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.1097-1100
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    • 2008
  • We demonstrate that the performance of amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFT) can be optimized by controlling the interfaces between IGZO and sandwiching insulators and by proper deposition of IGZO layer. Specifically, contact and channel resistances are decreased by reducing IGZO bulk resistance and optimizing dry-etch process, respectively. Field-effect mobility ($\mu_{FE}$) and subthreshold gate swing (S) are further enhanced by fine-tuning IGZO deposition condition.

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