• Korean Journal of Crystallography
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• v.5 no.2
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• pp.67-77
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• 1994

From the Y3-3xNd3xAl5O12single crystals grown by the Czochralski technique, various types of defects were detected and 1) the reason of opical in homogeneous phases, 2) the mechanism of formation of the iridum metal inclusions accompanying bubbles, and 3) the mechanism of formation of the core and facet were analysed After preparing the wafers of the <111> growth parallel, defscts were observed by the polarising microscope using a photoelasic effect and then some images of stress-birefringence were compared to their etch Pits patterns.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1550-1552
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• 1999

In this study, (Ba,Sr)$TiO_3$ thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) as a function $CF_4$/Ar gas mixing ratio. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1700{\AA}$/min under $CF_4/(CF_4+Ar)$ of 0.1, 600W/350V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the (Ba,Sr)$TiO_3$ etching. To analysis the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

• Journal of the Korean Society for Precision Engineering
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• v.14 no.12
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• pp.153-159
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• 1997

A thermally-driven polysilicon microactuator has been fabricated using surface micromachining techniques. It consists of P-doped polysilicon as a structural layer and TEOS(tetraethylorthosilicate) oxide as a sacrificial layer. The polysilicon was annealed for the relaxation of residual stress which is the main cause to its deformation such as bending and buckling. And newly developed HF GPE(gas-phase etching) process was also employed to eliminate the troublesome stiction problem using anhydrous HF gas and CH$_{3}$OH vapor, and successfully fabricated the microactuators. The actuation is incurred by the thermal expansion due to the current flow in the active polysilicon cantilever, which motion is amplified by lever mechanism. The moving distance of polysilicon microactuator was experimentally conformed as large as 21 .mu. m at the input voltage level of 10V and 50Hz square wave. The actuating characteris- tics are also compared with the simulalted results considering heat transfer and thermal expansion in the polysilicon layer. This microactuator technology can be utilized for the fabrication of MEMS (microelectromechanical system) such as microrelay, which requires large displacement or contact force but relatively slow response.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.102-102
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• 2008

Sapphire (${\alpha}-Al_2O_3$) has been used as the substrate of opto-electronic device because of characteristics of thermal stability, comparatively low cost, large diameter, optical transparency and chemical compatibility. However, there is difficulty in the etching and patterning due to the physical stability of sapphire and the selectivity with sapphire and mask materials [1,2]. Therefore, sapphire has been studied on the various fields and need to be studied, continuously. In this study, the etching properties of sapphire substrate were investigated with various $CH_4$/Ar gas combination, radio frequency (RF) power, DC-bias voltage and process pressure. The characteristics of the plasma were estimated for mechanism using optical emission spectroscopy (OES). The chemical compounds on the surface of sapphire substrate were investigated using energy dispersive X-ray (EDX). The chemical reaction on the surface of the etched sapphire substrate was observed by X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to investigate the vertical and slope profiles.

• Corrosion Science and Technology
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• v.11 no.5
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• pp.196-204
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• 2012

Corrosion failure of petrochemical facilities is one of the difficulties in maintenance, since operating conditions of crude oil production, storage, and refinement are very aggressive. UNS N08810, which has been used for crude oil transportation pipes and storage tanks in petrochemical industries, shows good resistance to general corrosion and localized corrosion in several environments. Among its environments, UNS N08810 showed better corrosion resistance in fuel gas containing sulfuric acid and phosphoric acid and sulfur. However, ductility and toughness at high temperature over about $500^{\circ}C$ were greatly reduced due to microstructural change. In general, welding process is the representative method to join the parts in industrial components. Because the alloy by welding can be sensitized and corroded, the manufacturing process should be controlled. In this work, UNS N08810 was used and heat treatment conditions including solution and stabilization treatments were controlled. Oxalic acid etch test by ASTM A262 Practice A was done to evaluate the qualitative sensitization in room temperature. Huey test by ASTM A262 Practice C was done to evaluate the intergranular corrosion rate in boiling 65% $HNO_3$ solution. Also, the microstructure by thermal history was analyzed. Experimental alloy showed high intergranular corrosion rate and its corrosion mechanism was elucidated.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.848-850
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• 1999

In this study, PZT etching was performed using planar inductively coupled Ar(20)/$Cl_2/BCl_3$ plasma, The etch rate of PZT film was 2450 $\AA/min$ at Ar(20)/$BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis for film composition was utilized. The chemical bond of PbO is broken by ion bombardment, and the peak of metal Pb in a Pb 4f peak begins to appear upon etching, decreasing Pb content faster than Zr and Ti. As increase content of additive $BCl_3$, the relative content of oxygen decreases rapidly. We thought that abundant Band BCl radicals made volatile oxy-compound such as $B_{x}O_{y}$ and/or $BClO_x$ bond. To understand etching mechanism, Langmuir probe and optical emission spectroscopy (OES) analysis were utilized for plasma diagnostic.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.867-869
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• 1999

In this study, $SrBi_{2}Ta_{2}O_{9}$(SBT) thin films were etched as a function of $SF_6$/Ar gas mixing ratio in magnetically enhanced inductively coupled plasma(MEICP) system fer a fixed rf power, dc-bias voltage, and chamber pressure. The etch rate of SBT thin film was $1500{\AA}/min$ and the selectivities of photoresist (PR) and $SiO_2$ to SBT thin film were 0.48 and 0.62, respectively when the samples were etched at a rf power of 600W, a dc-bias voltage of -150V, a chamber pressure of 10 mTorr and a gas mixing ratio of $SF_6/(SF_6+A)$=0.1. In order to examine the chemical reactions on the etched surface, X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry(SIMS) were done.

• Journal of the Korean institute of surface engineering
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• v.37 no.4
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• pp.220-225
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• 2004

A new ion beam extraction system is designed using a simple ion mass filter and a micro mass balance and a QMS based detecting system. A quadrupole Mass Filter is used for selective ion beam formation from inductively coupled high density plasma sources with appropriate electrostatic lens and final analyzing QMS. Also a quartz crystal microbalance is set between a QMF and a QMS to measure the etching and polymerization rate of the mass selected ion beam. An inductively coupled plasma was used as a ion/radical source which had an electron temperature of 4-8 eV and electron density of $4${\times}$10^{11}$＃/㎤. A computer interfaced system through 12bit AD-DA board can control the pass ion mass of the qmf by setting RF/DC voltage ratio applied to the quadrupoles so that time modulation of pass ion's mass is possible. So the direct measurements of ion - surface chemistry can be possible in a resolution of $1\AA$/sec based on the qcm's sensitivity. A full set of driving software and hardware setting is successfully carried out to get fundamental plasma information of the ICP source and analysed $Ar^{+}$ beam was detected at the $2^{nd}$ QMS.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.8
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• pp.12-16
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• 2002

It is confirmed that the ITO(Indium Tin Oxide) thin films can be etched by low-temperature plasma at atmospheric pressure. The etching happened deepest at a hydrogen flow rate of 4 sccm, and the etch rate was 120 /min. The etching speed corresponded to the H$\alpha$* emission intensity The etching mechanism of the ITO thin films is as follows; thin films were reduced by H$\alpha$*, and the metal compound residues were detached from the substrate by reacting on the CH* The etching was started after etching time of initial 50 sec and above the threshold temperature of 145$^{\circ}C$. The activation energy of 0.16 eV(3.75 Kcal/mole) was obtained from the Arrehenius plots.

• Bulletin of the Korean Chemical Society
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• v.30 no.5
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• pp.1043-1046
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• 2009

Human protein tyrosine kinase-6 (PTK6) is a member of the non-receptor protein tyrosine kinase family and it is found in two-thirds of all breast tumors. Very recently, we proposed that the SH3 domain of PTK6 interacts with the linker region (Linker) between the SH2 and kinase domains, proving that the interaction between SH3 domain and Linker plays an important role in auto-inhibition mechanism. Residues from 1 to 191 corresponding region of SH3-SH2-Linker (SH32L) of PTK6 was cloned into the pET32a expression vector with Tobbaco etch virus (TEV) protease enzyme site by sequence homology and 3D structural model. The purified PTK6-SH32L was determined as a monomer conformation in solution. The amide proton resonances in the $^{15}N-^{1}H$ 2D-HSQC spectrum suggest that PTK6-SH32L possesses disordered structural region of the flexible/unstructured linker region. In addition, the backbone amide proton chemical shifts of the SH3 domain in the PTK6-SH32L differ from that of the independent domain, indicating that intra-molecular interaction between SH3 and Linker in the PTK6-SH32L is present.