Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Study on mechanism for etching of $SrBi_{2}Ta_{2}O_{9}$ thin film in $SF_6$/Ar gas plasma

$SF_6$/Ar 가스 플라즈마에 의한 $SrBi_{2}Ta_{2}O_{9}$ 박막의 식각 메커니즘 연구

  • Kim, Dong-Pyo (School of Electrical and Electronic Engineering, Chung-Ang University) ;
  • Seo, Jung-Woo (School of Electrical and Electronic Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (School of Electrical and Electronic Engineering, Chung-Ang University)
  • 김동표 (중앙대학교 전자전기공학부) ;
  • 서정우 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • Published : 1999.11.20
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Abstract

In this study, $SrBi_{2}Ta_{2}O_{9}$(SBT) thin films were etched as a function of $SF_6$/Ar gas mixing ratio in magnetically enhanced inductively coupled plasma(MEICP) system fer a fixed rf power, dc-bias voltage, and chamber pressure. The etch rate of SBT thin film was $1500{\AA}/min$ and the selectivities of photoresist (PR) and $SiO_2$ to SBT thin film were 0.48 and 0.62, respectively when the samples were etched at a rf power of 600W, a dc-bias voltage of -150V, a chamber pressure of 10 mTorr and a gas mixing ratio of $SF_6/(SF_6+A)$=0.1. In order to examine the chemical reactions on the etched surface, X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry(SIMS) were done.

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