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Effect of Hydrogen in ITO(Indium Tin Oxide) Thin Films Etching by Low Temperature Plasma at Atmospheric Pressure  

Lee, Bong-Ju (Dept.of Physics Chemistry, Chosun University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.39, no.8, 2002 , pp. 12-16 More about this Journal
Abstract
It is confirmed that the ITO(Indium Tin Oxide) thin films can be etched by low-temperature plasma at atmospheric pressure. The etching happened deepest at a hydrogen flow rate of 4 sccm, and the etch rate was 120 /min. The etching speed corresponded to the H$\alpha$* emission intensity The etching mechanism of the ITO thin films is as follows; thin films were reduced by H$\alpha$*, and the metal compound residues were detached from the substrate by reacting on the CH* The etching was started after etching time of initial 50 sec and above the threshold temperature of 145$^{\circ}C$. The activation energy of 0.16 eV(3.75 Kcal/mole) was obtained from the Arrehenius plots.
Keywords
low temperature plasma; ITO(Indium Tin Oxide); atmospheric pressure; Plasma etching; optical emission.;
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