• 전자공학회논문지 IE
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• v.44 no.2
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• pp.1-7
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• 2007

The increasing high frequency capabilities of CMOS have resulted in increased RF and analog design in CMOS. Design of RF and analog circuits depends critically on device S-parameter characteristics, magnitude of real and imaginary components and their behavior as a function of frequency. Utilization of scaled high performance CMOS technologies poses challenges as concerns for reliability degradation mechanisms increase. It is important to understand and quantify the effects of the reliability degradation mechanisms on the S-parameters and in turn on small signal model parameters. Various physical effects influencing small-signal parameters, especially the transconductance and capacitances and their degradation dependence, are discussed in detail. The measured S-parameters of H-gate and T-gate devices in a frequency range from 0.5GHz to 40GHz. All intrinsic and extrinsic parameters are extracted from S-parameters measurements at a single bias point in saturation. In this paper we discuss the analysis of the small signal equivalent circuits of RF SOI MOSFET's verificated for the purpose of exacting the change of parameter of small signal equivalent model followed by device flame.

• International Journal of Aerospace System Engineering
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• v.9 no.1
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• pp.1-15
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• 2022

Pyrotechnic initiators provide a source of pyrotechnic energy used to initiate a variety of space mechanisms. Pyrotechnic systems build in electromagnetic environment that may lead to critical or catastrophic hazards. Special precautions are need to prevent a pulse large enough to trigger the initiator from appearing in the pyrotechnic firing circuits at any but the desired time. The EMC verification shall be shown by analysis or test that the pyrotechnic systems meets the requirements of inadvertent activation. The MIL-STD-1576 and two range safeties, AFSPC and CSG, require the safety margin for electromagnetic potential hazards to pyrotechnic systems to a level at least 20 dB below the maximum no-fire power of the EED. The PC23 is equivalent to NASA standard initiator and the 1EPWH100 squib is ESA standard initiator. This paper verifies the two safety margins for electromagnetic potential hazards. The first is verified by analyzing against a RF power. The second is verified by testing against a DC current. The EMC safety margin requirement against RF power has been demonstrated through the electric field coupling analysis in differential mode with 21 dB both PC23 and 1EPWH100, and in common mode with 58 dB for PC23 and 48 dB for 1EPWH100 against the maximum no-fire power of the EED. Also, the EMC safety margin requirement against DC current has been demonstrated through the electrical isolation test for the pyrotechnic firing circuits with greater than 20 dB below the maximum no-fire current of the EED.

• Progress in Superconductivity and Cryogenics
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• v.11 no.1
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• pp.64-68
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• 2009

To keep the superconducting (SC) magnet coils of KSTAR at proper operating conditions, not only the coils but also other cold components, such as thermal shields (TS), magnet structures, SC bus-lines (BL), and current leads (CL) must be maintained at their respective cryogenic temperatures. A helium refrigeration system (HRS) with an exergetic equivalent cooling power of 9kW at 4.5K without liquid nitrogen $(LN_2)$ pre-cooling has been manufactured and installed for such purposes. In this proceeding, we will present the commissioning and initial operation results of the KSTAR HRS. Circuits which can simulate the thermal loads and pressure drops corresponding to the cooling channels of each cold component of KSTAR have been integrated into the helium distribution system of the HRS. Using those circuits, the performance and the capability of the HRS, to fulfill the mission of establishing the appropriate operating condition for the KSTAR SC magnet coils, have been successfully demonstrated.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.9
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• pp.259-269
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• 2012

With the lower supply voltage and the higher operating frequency in integrated circuits, the analysis of the power distribution network (PDN) including on-chip inductances becomes more important. In this paper, an effective inductance extraction method for a regular on-chip power grid structure is proposed. The loop inductance model applicable to chip layout is proposed and the inductance extraction tool using the proposed inductance model based on post layout RC circuits is developed. The accuracy of the proposed loop model and the developed tool is verified by comparing the test circuit simulation results with those from the partial element equivalent circuit (PEEC) model. The voltage fluctuation from the RLC circuits extracted by the developed tool was examined for the analysis of on-chip inductance effects. The significance of on-chip power grid inductance was investigated by the co-simulation of chip-package-PCB.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.3
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• pp.129-134
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• 2018

Herein, we report the manufacture of high-performance, ambipolar organic field-effect transistors (OFETs) and complementary-like electronic circuitry based on a blended, polymeric, semiconducting film. Relatively high and well-balanced electron and hole mobilities were achieved by incorporating a small amount of ionic additives. The equivalent P-channel and N-channel properties of the ambipolar OFETs enabled the manufacture of complementary-like inverter circuits with a near-ideal switching point, high gain, and good noise margins, via a simple blanket spin-coating process with no additional patterning of each active P-type and N-type semiconductor layer.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.3
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• pp.399-408
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• 2022

This paper proposes a corrective control system to achieve fault-tolerant control for input/output asynchronous sequential circuits vulnerable to transient faults violating fundamental mode operations. To overcome non-fundamental mode faults occurring in transient transitions of asynchronous sequential circuits, it is necessary to determine the end of unauthorized state transitions caused by the faults and to stably take the circuit from the faulty state to a desired state that is output equivalent with the normal next stable state. We address the existence condition for a proper output-feedback corrective controller that achieves fault diagnosis and fault-tolerant control for these non-fundamental mode faults. The corrective controller and asynchronous sequential circuit are implemented on field-programming gate array to demonstrate the synthesis procedure and applicability of the proposed control scheme.

• Proceedings of the KIEE Conference
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• 2000.07a
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• pp.464-466
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• 2000

In this paper, the high frequency models of pole-transformers are provided to confirm the feasibility of PLC systems between high and low voltage distribution systems. The impedance of transformers is measured to verify the characteristics of transformers at high frequency from 100[kHz] to 1[MHz] and the equivalent circuits of the transformers were designed based on the measured impedance. The signals transmitted from the primary and the secondary sides of the transformers were measured, respectively. The transmission loss of the transformers was obtained by the measured signals. Numerical analysis using the equivalent circuit is compared to the measured signals. The possibility of communication through pole-transformers is presented by experiments and simulations.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.9
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• pp.677-684
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• 2018

In this paper, we propose a method for high-frequency modeling of transformers using the S-parameter. The open and short circuits of the primary and secondary sides were configured, and the reflection coefficient in each circuit was measured using a vector network analyzer. The equivalent circuit elements were extracted from the measured results to model the high-frequency equivalent circuit, and the validity of the method was verified by comparing the measured S-parameters in a 2-port network with the simulation results.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.11
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• pp.18-28
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• 1999

A new equivalent circuit model of package (SOP, Small Outline Package) is presented for designing radio frequency integrated circuits (RFIC). In the RF region, the paddle of a package does not work as an ideal ground. Further parasitics due to both coupling and loss have a substantial effect on MMIC. The equivalent circuit model and parameter extraction methodology for the electrical characteristics of the package are described by illustrating the SOP type packages. The accuracy of the model is evaluated by comparing the s-parameters of the commercial full-wave solver and those of HSPICE simulation with the circuit model. The proposed model shows an excellent agreement with full-wave analysis up to about 8GHz.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.9
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• pp.1308-1316
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• 1989

A simplified 10-element GaAs MESFET equivalent circuit model has been presented which is suitable for the design of ultrabroad-band microwave small-signal amplification, the these circuit element values are extracted from measured S-parameters using complex-curve fitting algorithm. Packaged GaAs MESFET equivalent circuits are composed of intrinsic \ulcornermodel and several extrinsic elements at microwave frequencies, of which the largest effects are caused by package lead inductances. If these are eliminated from measured S-parameters, newly obtained S-parameters are closed to intrinsic \ulcornermodel, and the rest element values can be easily extracted. The modeling results applied to the packaged GaAs MESFET NE71083 are almost equal between the measure S-parameters and the mideled S-parameters within b 2% errors from DC to 8GHz, and errors are increased to \ulcorner% upto 12GHz wide bandwidth.