Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 26 Issue 9
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- Pages.1308-1316
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- 1989
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- 1016-135X(pISSN)
A Simplified GaAs MESFET Modeling for the Design of Ultrabroad-Band Microwave Amplifiers
초광대역 마이크로파 증폭기 설계를 위한 단순화한 GaAs MESFET 모델링
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Yoon, Young-Chul
(Dept. of Elec. Eng., Kwangdong Univ.)
;
- Kim, Byung-Chul (Dept. of Elec. Eng., Kumoh Inst. of Tech.) ;
- Ahn, Dal (Dept. of Elec. Eng., Sogang Univ.) ;
- Chang, Ik-Soo (Dept. of Elec. Eng., Sogang Univ.)
- Published : 1989.09.01
Abstract
A simplified 10-element GaAs MESFET equivalent circuit model has been presented which is suitable for the design of ultrabroad-band microwave small-signal amplification, the these circuit element values are extracted from measured S-parameters using complex-curve fitting algorithm. Packaged GaAs MESFET equivalent circuits are composed of intrinsic \ulcornermodel and several extrinsic elements at microwave frequencies, of which the largest effects are caused by package lead inductances. If these are eliminated from measured S-parameters, newly obtained S-parameters are closed to intrinsic \ulcornermodel, and the rest element values can be easily extracted. The modeling results applied to the packaged GaAs MESFET NE71083 are almost equal between the measure S-parameters and the mideled S-parameters within b 2% errors from DC to 8GHz, and errors are increased to \ulcorner% upto 12GHz wide bandwidth.
Keywords