• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.3
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• pp.356-364
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• 2015

The transmission performance of TSV considering the effect of electronic-thermal coupling is an new challenge in three dimension integrated circuit. This paper presents the thermal equivalent circuit (TEC) model of the TSV, and discussed the thermal equivalent parameters for TSV. Si layer is equivalent to transmission line according to its thermal characteristic. Thermal transient response (TTR) of TSV considering electronic-thermal coupling effects are proposed, iteration flow electronic-thermal coupling for TSV is analyzed. Furthermore, the influences of TTR are investigated with the non-coupling and considering coupling for TSV. Finally, the relationship among temperature, thickness of $SiO_2$, radius of via and frequency of excitation source are addressed, which are verified by the simulation.

• Journal of Magnetics
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• v.20 no.1
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• pp.57-61
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• 2015

In this paper wireless power transmission system based on magnetic resonance coupling circuit was carried out. With the research objectives based on the mutual coupling model, mathematical expressions of optimal coupling coefficients are examined. Equivalent circuit parameters are calculated by Maxwell software, and the equivalent circuit was solved by Matlab software. The power transfer efficiency of the system was derived by using the electrical parameters of the equivalent circuit. System efficiency was analyzed depending on the different air gap values for various characteristic impedances. Hence, magnetic resonance coupling involves creating a resonance and transferring the power without radiating electromagnetic waves. As the air gap between the coils increased the coupling between the coils were weakened. The impedance of circuit varied as the air gap changed, affecting the power transfer efficiency.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.17-22
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• 2005

This paper presents a improvement equivalent circuit model for Miniaturized LTCC bandpass filter with two transmission zeros using feed-back capacitor. The bandpass filter equivalent circuit is evaluated by parallel network analysis. Besides, the filter is modeled by proposed passive element modeling algorithm in previous work. Compared to the equivalent circuit of established paper that is configured by excepted capacitance between ground plate and signal plate, this model can include that. The result, the LTCC bandpass filter reduce layers and the size is more smaller.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2166-2172
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• 2007

In this study a low-signal equivalent circuit based on the Double Schottky Barrier model is proposed for ZnO-based varistor. Since pin-lead inductance and stray capacitance are considered in pin-lead type ZnO varistor these inductance and capacitance could be removed from the experimental dielectric data of the varistor. According to the equivalent circuit simulation results the higher the varistor-voltage of varistor sample the capacitance of dielectric layer is larger, and the capacitances of semiconducting layer and depletion layer are smaller, while the parallel resistances of semiconducting layer and depletion layer are more larger values. Spectra of the dielectric loss factor $tan{\delta}$ show 2 peaks in low frequency and high frequency regions respectively. The low-frequency peak is due to the relaxation by deep donors and the high-frequency peak is due to the relaxation by shallow donors. Above results are well consistent with the theoretical mechanism of ZnO varistor.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1434-1435
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• 2008

In this paper, we propose a method that applies Vector Fitting(VF) and Adaptive Frequency Sampling(ASF) technique to the equivalent circuit model for RF passive components. VF and ASF schemes are implemented to obtain the rational functions. S parameters of the equivalent circuit model is compared to those of EM simulation in case of the microstrip structure with coupled bandpass filter.

• Journal of Biomedical Engineering Research
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• v.2 no.1
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• pp.31-38
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• 1981

The objective of the present study was to develop an equivalent circuit model of glucose kinetics including the hepatic glucose balance functions which were neglected in the previous compartmental models. Using this circuit model, the insulin resistivity parameter and hepatic glucose sensitivity parameter were estimated in optimal fitting of the model based data of glucose and insulin concentration to the reported clinical intravenous glucose tolerance test(IVGTT) data in normal and diabetic subjects. The addition of the hepatic function in the model has improved the overall performance of the simulation. Also, the computed tissue insulin resistivity and the hepatic glucose sensitivity are shown to be significant in distinguishin four clinical groups of normal and diabetic groups.

• Transactions on Electrical and Electronic Materials
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• v.4 no.3
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• pp.5-9
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• 2003

In this paper, a layout-based CMOS RF model for RFIC's including the capacitance effect, the skin effect, and the proximity effect between metal lines on the Si surface is proposed for the first time for accurately predicting the RF behavior of CMOS devices. With these RF effects, the RF equivalent circuit model based on the layout of the multi-finger gate transistor is presented. The capacitances between metal lines on the Si surface are modeled with the layout. And the skin effect is modeled to the equivalent ladder circuit of metal line. The proximity effect is modeled by adding the mutual inductance between cross-coupled inductances in the ladder circuit representation. Compared to the BSIM 3v3 and other models, the proposed RF model shows better agreements with the measured data and shows well the frequency dependent behavior of devices in GHz ranges.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.3
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• pp.6-21
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• 2008

We have investigated the effect of the forward and reverse ESD pulse accumulation on the development of the oxide VCSEL's electrical and optical characteristics. The forward ESD-induced degradation is complicated, showing three degradation phases with increasing ESD voltage while the reverse ESD-induced degradation is divided by a sudden distinctive change in elecorl-optical characteristics. By comparing the measured L-I-V characteristics and their derivatives with the fitted characteristics using an equivalent circuit model as well as the large signal circuit model, the development of the oxide VCSEL's electro-optical characteristics under forward and reverse ESD conditions has been fully understood.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2001.05a
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• pp.127-132
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• 2001

In this paper, transmitted sound reduction performance of smart panels is studied according to different piezoelectric materials with piezoelectric shunt damping. Peizo-damping is implemented by using a newly proposed tuning method. This method is based on electrical impedance model and maximizing the dissipated energy at the shunt circuit. By measuring the electrical impedance at the piezoelectric patch bonded on a structure, an equivalent electrical model is constructed near the system resonance frequency. After shunting elements are connected to the equivalent circuit, the shunt parameters are optimally searched based on the criterion of maximizing the dissipated energy at the shunt circuit. Transmitted sound reduction performance is compared according to different piezoelectric materials with peizo-damping. Two piezoelectric materials are selected: PZT-5 and QuickPack IDE actuator. When resonant shunt circuit is considered, the use of PZT-5 exhibited the good sound reduction performance.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2002.04a
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• pp.470-477
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• 2002

Possibility of passive piezoelectric damping based on a new shunting parameter estimation method is studied using finite element analysis. The adopted tuning method is based electrical impedance that is found at piezoelectric device and the optimal criterion for maximizing dissipated energy at the shunt circuit. Full three dimensional finite element model is used for piezoelectric devices with cantilever plate structure and shunt electronic circuit is taken into account in the model. Electrical impedance is calculated at the piezoelectric device, which represents the structural behavior in terms of electrical field, and equivalent electrical circuit parameters for the first mode are extracted using PRAP (Piezoelectric Resonance Analysis Program). After the shunt circuit is connected to the equivalent circuit for the first mode, the shunt parameters are optimally decided based on the maximizing dissipated energy criterion. Since this tuning method is based on electrical impedance calculated at piezoelectric device, multi-mode passive piezoelectric damping can be implemented for arbitrary shaped structures.