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Analysis of the ESD-Induced Degradation Behavior of Oxide VCSELs Using an Equivalent Circuit Model  

Kim, Tae-Yong (Division of Electrical and Computer Engineering, Ajou University)
Kim, Sang-Bae (Division of Electrical and Computer Engineering, Ajou University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.45, no.3, 2008 , pp. 6-21 More about this Journal
Abstract
We have investigated the effect of the forward and reverse ESD pulse accumulation on the development of the oxide VCSEL's electrical and optical characteristics. The forward ESD-induced degradation is complicated, showing three degradation phases with increasing ESD voltage while the reverse ESD-induced degradation is divided by a sudden distinctive change in elecorl-optical characteristics. By comparing the measured L-I-V characteristics and their derivatives with the fitted characteristics using an equivalent circuit model as well as the large signal circuit model, the development of the oxide VCSEL's electro-optical characteristics under forward and reverse ESD conditions has been fully understood.
Keywords
vertical-cavity surface-emitting lasers; electrostatic discharge; equivalent circuit;
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