• Title/Summary/Keyword: Energy dependence

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Magnetic Anisotropy Energy Distribution and Magnetization of CoPt Nanoparticles Encaged in Protein Shell

  • Lee, T.H.;Suh, B.J.;Jang, Z.H.
    • Journal of Magnetics
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    • 제22권1호
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    • pp.1-6
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    • 2017
  • Magnetic properties of CoPt nanoparticles (average size = 2.1 nm) encapsulated in synthesized protein shell have been investigated with SQUID (Superconducting Quantum Interference Device) magnetometer and analyzed by the recently developed non-equilibrium magnetization calculation by our group [T. H. Lee et al., Phys. Rev. B 90, 184411 (2014)]. Field dependence of magnetization measured at 2 K was successfully analyzed with modified Langevin function. In addition, small hysteresis loops having the coercive field of 890 Oe were observed at 2 K. Temperature dependence of magnetization has been measured with zero field cooled (ZFC) and field cooled (FC) protocol with slightly modified sequence in accordance with non-equilibrium magnetization calculation. The analysis on the M vs. T data revealed that the anisotropy energy barrier distribution is found to be very different from the log-normal distribution found in a size distribution. Zero temperature coercive field and Bloch coefficient have also been extracted from the analysis and the validity of those values is checked.

산화동에 있어 온도변화에 의한 전기전도도에 관한 연구 (The Dependence of Electrical Conductivity of Cupric Oxide on Temperature)

  • 안영필;이희동
    • 한국세라믹학회지
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    • 제20권2호
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    • pp.161-165
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    • 1983
  • We studied the dependence of electrical conduction mechanism of Cupric Oxide on temperature and measured the specific resistivity of sintered specimen from $600^{\circ}C$ to 90$0^{\circ}C$ . We considered the relations between electrical conducti-vityand temperature with reheating the sintered specimen. X-Ray diffraction patterns showed that lattice parameters of cupric oxide increased above 20$0^{\circ}C$. Cupric oxide had nostoichiometric compositions$(CuO_{1+x})$ owing to the excess oxygen and showed hole conduction with energy gap of 0.15eV below $650^{\circ}C$$\pm$1$0^{\circ}C$ Above $650^{\circ}C$$\pm$1$0^{\circ}C$ cupic oxide had the stoichiometric composition and showed electron-hole conduction owing to the intrinsic ionization with energy gap of 1.04V.

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Twisted Intramoecular Charge-Transfer Behavior of a Pre-Twisted Molecule, 4-Biphenylcarboxylate Bonded to Poly(Methyl Methacrylate)

  • 강성관;안교덕;조대원;윤민중
    • Bulletin of the Korean Chemical Society
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    • 제16권10호
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    • pp.972-976
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    • 1995
  • A trace amount of 4-biphenylcarboxylate having a pre-twisted biphenyl moiety was attached to a poly(methyl methacrylate) side chain and the fluorescence properties of the chromophore were investigated in various solvents such as ethyl acetate and butyl chloride. At room temperature, the polymer exhibited a distinct red shift of the short wavelength emission (325 nm) and an enhanced emission intensity around 430 nm upon excitation at the absorption red edge. The temperature dependence of the intensity ratio (R) of the 325 nm emission to the 430 nm emission was observed when exciting at the red edge over the temperature range between -20 and 60 ℃. However, the temperature dependence was not observed when exciting at the shorter wavelength. The Arrhenius plot of the R value shows the activation energy of 6.0 kJ/mol which is in good agreement with the energy required for the twist of the biphenyl moiety. Together with the results of red edge excitation effects it was concluded that the pre-twisted geometry of the biphenyl moiety is preserved by the restriction of the polymer chain to facilitate the formation of the twisted intramolecular charge transfer (TICT) state upon excitation.

Modeling negative and positive temperature dependence of the gate leakage current in GaN high-electron mobility transistors

  • Mao, Ling-Feng
    • ETRI Journal
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    • 제44권3호
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    • pp.504-511
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    • 2022
  • Monte Carlo simulations show that, as temperature increases, the average kinetic energy of channel electrons in a GaN transistor first decreases and then increases. According to the calculations, the relative energy change reaches 40%. This change leads to a reduced barrier height due to quantum coupling among the three-dimensional motions of channel electrons. Thus, an analysis and physical model of the gate leakage current that includes drift velocity is proposed. Numerical calculations show that the negative and positive temperature dependence of gate leakage currents decreases across the barrier as the field increases. They also demonstrate that source-drain voltage can have an effect of 1 to 2 orders of magnitude on the gate leakage current. The proposed model agrees well with the experimental results.

전기장 제어에 따른 ER유체의 온도 의존성에 관한 연구 (A Study on the Temperature Dependence of Electro-Rheological Fluids with Electric Field Control)

  • 장성철;박창수;이찬규
    • 한국기계가공학회지
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    • 제3권2호
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    • pp.67-72
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    • 2004
  • Electro-Rheological(ER) fluids consist of suspensions of fine polarizable particles In a dielectric oil, which upon application of an external electric field control take on the characteristics of the Bingham solid. In this study, the temperature dependence of the viscosity was Investigated for an ER fluid consisting of 35 weight % of zeolite particles in hydraulic oil 46cSt. Thermal activation analysis was performed by changing the ER fluid's temperature from $-10^{\circ}C$ to $50^{\circ}C$. According to the analysis, the activation energy for flow of the ER fluid was 79.6 kJ/mole without applying electric field. On the other hand, with the electric field of 2kV/mm, the linearity between viscosity and temperature was not existed By changing the temperatures the viscosity (or shear stress) versus shear rates were measured. In this experiment shear rates were increased from 0 to $200s^{-1}$ in 2 minutes. Generally, the hydraulic oil 46cSt will be operated at the temperature of about $40^{\circ}C$, thus, the ER fluid's electric field dependence of viscosity was examined at this temperature. Also, an influence of adding the dispersant(Carbopl 940) on ER effect was discussed.

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비대칭 자기터널접합에서의 수직 스핀 전달 토크: 물질 변수에 대한 의존성 (Perpendicular Spin-transfer Torque in Asymmetric Magnetic Tunnel Junctions: Material Parameter Dependence)

  • 한재호;이현우
    • 한국자기학회지
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    • 제21권2호
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    • pp.52-55
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    • 2011
  • 스핀전달토크는 나노구조에서 자성상태를 제어하는데 유용한 수단이다. 자기터널접합에서 스핀전달토크는 자성물질층의 자화가 이루는 평면에 평행한 성분과 수직인 성분으로 나눌 수 있다. 이중 평행한 성분의 스핀전달토크의 성질은 상당히 잘 알려져 있으나, 수직인 성분의 스핀전달토크의 성질에 대해서는 여전히 이견이 많다. 비대칭 자기터널접합에서의 최근 실험에서, 수직전달토크의 전압 의존성이 전압의 이차항 성분뿐만 아니라 일차항 성분도 가짐을 보고하였다. 하지만 물질 변수에 대한 의존성은 여전히 잘 알려지지 않았다. 이 논문에서는 비대칭 자기터널접합에서의 스핀전달토크의 전압의존성을, 강자성층의 스핀 갈라짐 에너지와 일함수의 차이, 그리고 페르미 에너지를 변화시켜 가면서 체계적인 조사를 하였다.

Thermal Properties of Mn-doped LiNbO3 Crystals from Magneto-Optical Transitions

  • Park, Jung-Il
    • Journal of Magnetics
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    • 제17권4호
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    • pp.255-260
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    • 2012
  • In this study, we determine that the electron paramagnetic resonance line-width (EPRLW) is axially symmetric about the c-axis and analyze the spin Hamiltonian with an isotopic g-factor of 1.9920 at a frequency of 9.5 GHz. It should be noted that the electron paramagnetic resonance signals are Lorentzian. Our findings show that the EPRLW decreases exponentially with an increase in the temperature; i.e., its temperature dependence in the range 300-400 K obeys Arrhenius behavior, this kind of temperature dependence indicates an off-center a motional narrowing of the spectrum when $Mn^{2+}$ impurity ions substitute for $Nb^{5+}$ ions. The specific heats follow a linear dependence suggesting a simple Debye $T^3$ behavior.

Thickness Dependent Temperature Accelerated Dielectric Break-down Strength of On-wafer Low Dielectric Constant Polymer Films

  • Kim, H. K.;Lee, S. W.;F. G. Shi;B. Zhao
    • KIEE International Transactions on Electrophysics and Applications
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    • 제2C권6호
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    • pp.281-286
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    • 2002
  • The temperature accelerated dielectric breakdown strength of on-wafer low-k dielectric polymer films with thicknesses ranging from 94 nm to 1141 nm is investigated by using the current-voltage characteristic measurements with MIS structures. The temperature dependence of dielectric strength is demonstrated to be Arrhenious for all thicknesses. However, the activation energy is found to be strongly thickness dependent. It follows an exponential relationship rather than being a single value, i.e., the activation energy increase significantly as film thickness increases for the thickness below 500 nm, but it is almost constant for the thickness above 500 nm. This relationship suggests that the change of the activation energy corresponding to different film thickness is closely related to the temperature dependence of the electron trapping/detrapping process in polymer thin films, and is determined by both the trapping rate and the detrapping rate. Thinner films need less energy to form a conduction path compared to thicker films. Hence, it leads to smaller activation energy in thinner films, and the activation energy increases with the increase in film thickness. However, a nearly constant value of the activation energy is achieved above a certain range of film thickness, indicating that the trapping rate and detrapping rate is almost equal and eventually the activation energy approaches the value of bulk material.