• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.12
• /
• pp.1045-1057
• /
• 2009

The authors investigated the InGaN/GaN multi-quantum well blue light emitting devices with the implementation of the photonic crystals fabricated at the top surface of p-GaN layer and the bottom interface of n-GaN layer. The top photonic crystals result in the lattice-dependent photoluminescence spectra at the wavelength of 450 nm and however, the bottom photonic crystal shows a big shift of the photoluminescence peak from 444 nm to 394 nm. The sample with the bottom photonic crystal structure also shows the lasing effect at the wavelength of 468 nm. Furthermore, the quality enhancement for the crystal growth of GaN thin film on the bottom photonic crystal comes from the modulated compressive stress which was measured by the micro-Raman spectroscopy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.12
• /
• pp.1014-1017
• /
• 2009

In this study, we studied the nature of thin films formed by holographic photodoping chalcogenide thin films with for use in programmable metallization cell devices(PMC), a type of ReRAM. We formatted straight conduction pathway from the internal interferences of the diffraction gratings which is builded by the holographic lithography method. We investigated the resistance change of solid-electrolyte chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. The switching characteristics of the devices applied holographic lithography method was more improved than ultraviolet exposure condition. As a result of improved resistance change effects, we can analogize that the diffraction gratings is a kind of pattern for straight conduction pathway formation inside the chalcogenide thin films.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
• /
• 2000.11a
• /
• pp.53.1-56
• /
• 2000

Langmuir-Blodgett(LB) technique is the best candidate for the future molecular electronic devices. But, these molecular thin film devices require the bulk properties that are influenced by the molecular orientations. So, this is of current interest in molecular electronic device fabrications of new materials. In this study, quantitative evaluation of molecular orientation in LB films of PAAS was performed by comparing the absorption intensities of the FT-IR transmission and reflection-absorption spectra and the polarized UV/visible absorption spectra. It was found that the polar angle($\theta$) of the dipole moment is about 68$^{\circ}$and the tilting angle of the alkyl chain is about $11.5^{\circ}$ .

• Journal of information and communication convergence engineering
• /
• v.9 no.5
• /
• pp.583-586
• /
• 2011

In this paper, subthreshold swing characteristics have been presented for double-gate MOSFETs, using the analytical model based on series form of potential distribution. Subthreshold swing is very important factor for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec. The channel length $L_g$ is varied from 30nm to 100nm, and channel thickness $t_{si}$ from 15 to 20nm according to channel length, and oxide thickness 5nm to investigate subthreshold swing. The doping of channel is fixed with $10^{16}cm^{-3}$ p-type. The results show good agreement with numerical simulations, confirming this model.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
• /
• 2005.05a
• /
• pp.298-302
• /
• 2005

This paper presents the protection effect of SPDs according to installation conditions. To develop the effective protection countermeasures of information and communication equipments against lightning surges, actual-sized experiments in relation to the protection effects on the installation positions of surge protective devices(SPDs), the length of branch circuit the materials and long of conduit were conducted. The best method for protecting the electronic equipments from surges is to install the SPD at the front point of the devices to be protected. The installation method of the metal conduit bonded with common ground conductor were more effective than that of the PVC conduit.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.3
• /
• pp.187-192
• /
• 2012

Development of new efficient, high voltage switching devices with wide safe operating area and low on-state losses has received considerable attention in recent years. One of those structures with a very effective geometrical design is the trench gate Insulated Gate Bipolar Transistor(IGBT).power IGBT devices are optimized for high-voltage low-power design, decided to aim. Class 1,200 V NPT Planer IGBT, 1,200 V NPT Trench IGBT for class has been studied.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.5
• /
• pp.276-281
• /
• 2014

A high-responsive Schottky device has been achieved by forming a thin metal deposition on a Si substrate. Two-different metals of Ni and Ag were used as a Schottky metal contact with a thickness about 10 nm. The barrier height formation between metal and Si determines the rectifying current profiles. Ag-embedding Schottky device gave an extremely high response of 17,881 at a wavelength of 900 nm. An efficient design of Schottky device may applied for photoelectric devices, including photodetectors and solar cells.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.6
• /
• pp.304-307
• /
• 2013

Reverse engineering of semiconductor devices utilizes delayering processes, in order to identify how the interconnection lines are stacked over transistor gates. Cu metal has been used in recent fabrication technologies, and de-processes becomes more difficult with the shrinking device dimensions. In this article, reverse engineering technologies to reveal the Cu interconnection lines and Cu via-plugs embedded in dielectric layers are investigated. Stacked dielectric layers are removed by $CF_4$ plasma etching, then the exposed planar Cu metal lines and via-plugs are selectively delineated by wet chemical solution, instead of the commonly used plasma-based dry etch. As a result, we have been successful in extracting the layouts of multiple layers within a system IC, and this technique can be applicable to other logic IC, analog IC, and CMOS IC, etc.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.6
• /
• pp.291-294
• /
• 2013

When subjected to a change in dimensions, the device performance decreases. Multi-gate SOI devices, viz. the Double Gate MOSFET (DG-MOSFET), are expected to make inroads into integrated circuit applications previously dominated exclusively by planar MOSFETs. The primary focus of attention is how channel engineering (i.e. Graded Channel (GC)) and gate engineering (i.e. Dual Insulator (DI)) as gate oxide) creates an effect on the device performance, specifically, leakage current ($I_{off}$), on current ($I_{on}$), and DIBL. This study examines the performance of the devices, by virtue of a simulation analysis, in conjunction with N-channel DG-MOSFETs. The important parameters for improvement in circuit speed and power consumption are discussed. From the analysis, DG-DI MOSFET is the most suitable candidate for high speed switching application, simultaneously providing better performance as an amplifier.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.58 no.3
• /
• pp.235-240
• /
• 2009

In automobile, the introduction of electronically commutated motors has been accompanied by a proliferation of electronic devices. With this proliferation of electronic devices, an emphasis has been placed on EMC issues. This paper is proposed to use SRM as a radiator cooling fan in automotive applications. To drive SRM, Energy efficient C-dump converter is applied. Energy efficient C-dump converter, derived from the conventional C-dump converter, is proposed as a switched reluctance motor (SRM) drive for automotive engine cooling application. It is verified more efficient than other converters through simulation and experiments. And also SRM is valid for automotive applications that have strict EMC standards. Simulation and experimental results obtained on a laboratory prototype are finally presented to evaluate the performance.