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http://dx.doi.org/10.4313/JKEM.2009.22.12.1045

Fabrications and Characterizations of InGaN/GaN Quantum Well Light Emitting Devices Including Photonic Crystal Nanocavity Structures  

Choi, Jae-Ho (전북대학교 기계공학과 및 공업기술연구센터)
Lee, Jung-Tack (전북대학교 기계공학과 및 공업기술연구센터)
Kim, Keun-Joo (전북대학교 기계공학과 및 공업기술연구센터)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.22, no.12, 2009 , pp. 1045-1057 More about this Journal
Abstract
The authors investigated the InGaN/GaN multi-quantum well blue light emitting devices with the implementation of the photonic crystals fabricated at the top surface of p-GaN layer and the bottom interface of n-GaN layer. The top photonic crystals result in the lattice-dependent photoluminescence spectra at the wavelength of 450 nm and however, the bottom photonic crystal shows a big shift of the photoluminescence peak from 444 nm to 394 nm. The sample with the bottom photonic crystal structure also shows the lasing effect at the wavelength of 468 nm. Furthermore, the quality enhancement for the crystal growth of GaN thin film on the bottom photonic crystal comes from the modulated compressive stress which was measured by the micro-Raman spectroscopy.
Keywords
Photonic crystal; Nanocavity; E-beam lithography; Blue light emission;
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Times Cited By KSCI : 5  (Citation Analysis)
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